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Salahuddin, Sayeef

Publications and source records attributed to Salahuddin, Sayeef.

36 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Generation and stability of structurally imprinted target skyrmions in magnetic multilayers

In this work, Target Skyrmions (TSks) are extended topological spin textures with a constant chirality where the rotation of the z component of the magnetization is larger than π. TSks have topological charge 1 or 0, if the z component of the magnetization M z goes through a rotation of nπwhere n is an odd or even integer, respectively. TSks with a rotation of the z component of up to 4πhave been imaged via high spatial resolution element-specific X-ray imaging. The TSks were generated by weakly coupling 30 nm thin Permalloy (Ni 80 Fe 20 , PY) disks with a 1 μm diameter to asymmetric (Ir 1 nm/Co 1.5 nm/Pt 1 nm) × 7 multilayers that exhibit Dzyaloshinskii-Moriya interaction. The PY disks stabilize the TSks in the multilayers due to reduced stray field energy and enforced circular symmetry from pinning of domain walls at the edges of the disks. Upon applying external magnetic fields, it is the skyrmion core at the center that ensures stability of the TSk, whereas the collapse of the extended structures in the TSk does not depend on the topological charge.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Writing of a magnetic memory with electric pulses

Methods and memory circuits for altering a magnetic direction of a magnetic memory cell using picosecond electric current pulses are disclosed. One method includes directing a first electric current pulse through the magnetic memory cell that includes a ferrimagnetic material layer to heat the ferrimagnetic material layer to toggle a magnetic direction of the ferrimagnetic material layer from a first magnetic direction to a second magnetic direction.

Yang, Yang↗
DOE OSTI2019

Spin-orbit torque and Nernst effect in Bi-Sb/Co heterostructures

Here, harmonic measurements of the longitudinal and transverse voltages in Bi-Sb/Co bilayers are presented. A large second harmonic voltage signal due to the ordinary Nernst effect is observed. In experiments where a magnetic field is rotated in the film plane, the ordinary Nernst effect shows the same angular dependence in the transverse voltage as the damping-like spin-orbit torque and in the longitudinal voltage as the unidirectional spin-Hall magnetoresistance, respectively. Therefore, the ordinary Nernst effect can be a spurious signal in spin-orbit torque measurements, leading to an overestimation of the spin-Hall angle and spin-Hall conductivity in topological insulators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Basic Research Needs for Microelectronics: Report of the Office of Science Workshop on Basic Research Needs for Microelectronics, October 23 – 25, 2018

Moore’s Law — realized via a combination of device physics advances, technology investments, and economic returns— allowed the number of transistors on a chip to double roughly every two years for over five decades. During those five decades, the cost of a unit of computing dropped by eight orders of magnitude. Those declines and the associated computing advances have dramatically affected every aspect of society, from science and technology through business and health to national security. Today, further computing advances are limited by the economics of chip fabrication and the physical limits on transistors, electrical interconnects, and memory elements at the nanoscale. If we are to evolve new generations of computing systems over the next decades that are both faster and more energy efficient, a complete reorganization of the science and technology underlying computing is needed. Within the Department of Energy’s (DOE’s) mission, which includes a pivotal and historical role in the evolution of computing, the needs are critical as well. Advanced computing and simulation underpin all aspects of DOE missions in energy, the environment, and national security, requiring energy-efficient computing beyond the exascale range. Edge computing, low-power computing technologies, and computers optimized for artificial intelligence are key to next-generation scientific facilities for high-energy physics research, as well as neutron and x-ray facilities. Finally, microelectronics will also play a major role in reshaping the U.S. electricity grid: from its current state to one that is cleaner, more efficient, cyber-secure, and resilient to widespread events, both natural and manmade. Realizing this vision will require advancements in both system architecture and power electronics. To enable continued advances in computing technologies, a fundamental rethinking is needed of the science behind the materials, synthesis and placement technologies, architectures, and algorithms. This cannot be modular and linear, as it has been in the past. Rather, these advances must be developed collectively, in a spirit of co-design, where each scientific discipline informs and engages the other to achieve orders of magnitude improvements in system-level performance. To explore these challenges, the Office of Science convened a Basic Research Needs Workshop for Microelectronics in October 2018 and charged workshop participants to conduct a thorough assessment of the scientific issues associated with advanced microelectronics technologies for applications relevant to the DOE mission. The workshop examined research relevant to the extension of complementary metal oxide semiconductor (CMOS) and beyond CMOS technologies; however, topics of direct relevance to quantum information science and quantum computing were outside the scope of this workshop.

42 ENGINEERING↗
DOE OSTI2018

Voltage-driven, local, and efficient excitation of nitrogen-vacancy centers in diamond

Magnetic sensing technology has found widespread application in a diverse set of industries including transportation, medicine, and resource exploration. These uses often require highly sensitive instruments to measure the extremely small magnetic fields involved, relying on difficult-to-integrate superconducting quantum interference devices and spin-exchange relaxation-free magnetometers. A potential alternative, nitrogen-vacancy (NV) centers in diamond, has shown great potential as a high-sensitivity and high-resolution magnetic sensor capable of operating in an unshielded, room-temperature environment. Transitioning NV center–based sensors into practical devices, however, is impeded by the need for high-power radio frequency (RF) excitation to manipulate them. We report an advance that combines two different physical phenomena to enable a highly efficient excitation of the NV centers: magnetoelastic drive of ferromagnetic resonance and NV-magnon coupling. Our work demonstrates a new pathway that combine acoustics and magnonics that enables highly energy-efficient and local excitation of NV centers without the need for any external RF excitation and, thus, could lead to completely integrated, on-chip, atomic sensors.

42 ENGINEERING↗
DOE OSTI2018

Experimental Evidence of Chiral Ferrimagnetism in Amorphous GdCo Films

Inversion symmetry breaking has become a vital research area in modern magnetism with phenomena including the Rashba effect, spin Hall effect, and the Dzyaloshinskii-Moriya interaction (DMI)-a vector spin exchange. The latter one may stabilize chiral spin textures with topologically nontrivial properties, such as Skyrmions. So far, chiral spin textures have mainly been studied in helimagnets and thin ferromagnets with heavy-element capping. Here, the concept of chirality driven by interfacial DMI is generalized to complex multicomponent systems and demonstrated on the example of chiral ferrimagnetism in amorphous GdCo films. Utilizing Lorentz microscopy and X-ray magnetic circular dichroism spectroscopy, and tailoring thickness, capping, and rare-earth composition, reveal that 2 nm thick GdCo films preserve ferrimagnetism and stabilize chiral domain walls. Finally, the type of chiral domain walls depends on the rare-earth composition/saturation magnetization, enabling a possible temperature control of the intrinsic properties of ferrimagnetic domain walls.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Publisher's Note: “Differential voltage amplification from ferroelectric negative capacitance” [Appl. Phys. Lett. 111, 253501 (2017)]

This article was originally published online on 18 December 2017. Due to a production error, the initially-published version contained several typographical errors not corrected during proof revisions, none of which affected the substance of the article. AIP Publishing apologizes for this error. All online versions of the article were corrected on 21 December 2017, and it now appears correctly in print.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2017

Differential voltage amplification from ferroelectric negative capacitance

Here, we demonstrate that a ferroelectric can cause a differential voltage amplification without needing an external energy source. As the ferroelectric switches from one polarization state to the other, a transfer of energy takes place from the ferroelectric to the dielectric, determined by the ratio of their capacitances, which, in turn, leads to the differential amplification. This amplification is very different in nature from conventional inductor-capacitor based circuits where an oscillatory amplification can be observed. The demonstration of differential voltage amplification from completely passive capacitor elements only has fundamental ramifications for next generation electronics.

42 ENGINEERING↗
DOE OSTI2017

Ultrafast magnetization reversal by picosecond electrical pulses

The field of spintronics involves the study of both spin and charge transport in solid-state devices. Ultrafast magnetism involves the use of femtosecond laser pulses to manipulate magnetic order on subpicosecond time scales. Here, we unite these phenomena by using picosecond charge current pulses to rapidly excite conduction electrons in magnetic metals. We observe deterministic, repeatable ultrafast reversal of the magnetization of a GdFeCo thin film with a single sub–10-ps electrical pulse. The magnetization reverses in ~10 ps, which is more than one order of magnitude faster than any other electrically controlled magnetic switching, and demonstrates a fundamentally new electrical switching mechanism that does not require spin-polarized currents or spin-transfer/orbit torques. The energy density required for switching is low, projecting to only 4 fJ needed to switch a (20 nm) 3 cell. This discovery introduces a new field of research into ultrafast charge current–driven spintronic phenomena and devices.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Single shot ultrafast all optical magnetization switching of ferromagnetic Co/Pt multilayers

A single femto-second optical pulse can fully reverse the magnetization of a film within picoseconds. Such fast operation hugely increases the range of application of magnetic devices. However, so far, this type of ultrafast switching has been restricted to ferri-magnetic GdFeCo films. In contrast, all optical switching of ferro-magnetic films require multiple pulses, thereby being slower and less energy efficient. In this study, we demonstrate magnetization switching induced by a single laser pulse in various ferromagnetic Co/Pt multilayers grown on GdFeCo, by exploiting the exchange coupling between the two magnetic films. Table-top depth-sensitive time-resolved magneto-optical experiments show that the Co/Pt magnetization switches within 7 ps. Lastly, this coupling approach will allow ultrafast control of a variety of magnetic films, which is critical for applications.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2

We report on the stabilization of the ferroelectric phase in Hf0.8Zr0.2O2 with a tungsten capping layer. Ferroelectricity is obtained in both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors with highly-doped Si serving as the bottom electrode in the MIS structure. Ferroelectricity is confirmed from both the electrical polarization-voltage (P-V) measurement and X-Ray Diffraction analysis that shows the presence of an orthorhombic phase. High-resolution Transmission Electron Microscopy and Energy Dispersive X-ray spectroscopy show minimal diffusion of W into the underlying Hf0.8Zr0.2O2 after the crystallization anneal. This is in contrast to significant Ti and N diffusion observed in ferroelectric HfxZr1-xO2 commonly capped with TiN.

Karbasian, Golnaz↗
DOE OSTI2016

Interface Engineering of Domain Structures in BiFeO 3 Thin Films

A wealth of fascinating phenomena have been discovered at the BiFeO 3 domain walls, examples such as domain wall conductivity, photovoltaic effects, and magnetoelectric coupling. Thus, the ability to precisely control the domain structures and accurately study their switching behaviors is critical to realize the next generation of novel devices based on domain wall functionalities. In this work, the introduction of a dielectric layer leads to the tunability of the depolarization field both in the multilayers and superlattices, which provides a novel approach to control the domain patterns of BiFeO 3 films. Moreover, we are able to study the switching behavior of the first time obtained periodic 109° stripe domains with a thick bottom electrode. Besides, the precise controlling of pure 71° and 109° periodic stripe domain walls enable us to make a clear demonstration that the exchange bias in the ferromagnet/BiFeO 3 system originates from 109° domain walls. Lastly, our findings provide future directions to study the room temperature electric field control of exchange bias and open a new pathway to explore the room temperature multiferroic vortices in the BiFeO 3 system.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Spin-orbit torques in ferrimagnetic GdFeCo alloys

In this work, the spin-orbit torque switching of ferrimagnetic Gd x (Fe 90 Co 10 ) 100-x films was studied for both transition metal (TM)-rich and rare earth (RE)-rich configurations. The spin-orbit torque driven magnetization switching follows the same sense in TM-rich and RE-rich samples with respect to the total magnetization, but the sense of the switching is reversed with respect to the TM magnetization. This indicates that the sign of the spin-orbit-torque-driven magnetic switching follows the total magnetization, although transport based techniques such as anomalous Hall effect are only sensitive to the transition metal magnetization. Finally, these results provide important insight into the physics of spin angular momentum transfer in materials with antiferromagnetically coupled sublattices.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Single crystal functional oxides on silicon

Single-crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism and so on that have the potential for completely new electronic applications. Direct synthesis of such oxides on silicon remains challenging because of the fundamental crystal chemistry and mechanical incompatibility of dissimilar interfaces. Here we report integration of thin (down to one unit cell) single crystalline, complex oxide films onto silicon substrates, by epitaxial transfer at room temperature. In a field-effect transistor using a transferred lead zirconate titanate layer as the gate insulator, we demonstrate direct reversible control of the semiconductor channel charge with polarization state. These results represent the realization of long pursued but yet to be demonstrated single-crystal functional oxides on-demand on silicon.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Flexible spin-orbit torque devices

We report on state-of-the-art spintronic devices synthesized and fabricated directly on a flexible organic substrate. Large perpendicular magnetic anisotropy was achieved in ultrathin ferromagnetic heterostructures of Pt/Co/MgO sputtered on a non-rigid plastic substrate at room temperature. Subsequently, a full magnetic reversal of the Co was observed by exploiting the spin orbit coupling in Pt that leads to a spin accumulation at the Pt/Co interface when an in-plane current is applied. Quasi-static measurements show the potential for operating these devices at nano-second speeds. Importantly, the behavior of the devices remained unchanged under varying bending conditions (up to a bending radius of ≈ ±20–30 mm). Furthermore, the devices showed robust operation even after application of 10{sup 6} successive pulses, which is likely sufficient for many flexible applications. Thus, this work demonstrates the potential for integrating high performance spintronic devices on flexible substrates, which could lead to many applications ranging from flexible non-volatile magnetic memory to local magnetic resonance imaging.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗