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Salama, A. M.

Publications and source records attributed to Salama, A. M..

11 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Precipitating Chromium Impurities in Silicon Wafers

Two new treatments for silicon wafers improve solar-cell conversion efficiency by precipitating electrically-active chromium impurities. One method is simple heat treatment. Other involves laser-induced damage followed by similar heat treatment. Chromium is one impurity of concern in metallurgical-grade silicon for solar cells. In new treatment, chromium active centers are made electrically inactive by precipitating chromium from solid solution, enabling use of lower grade, lower cost silicon in cell manufacture.

Salama, A. M.↗
NASA NTRS1982

Efficiency of silicon solar cells containing chromium

Efficiency of silicon solar cells containing about one quadrillon atoms cu cm of chromium is improved about 26% by thermal annealing of the silicon wafer at a temperature of 200 C to form chromium precipitates having a diameter of less than 1 Angstrom. Further improvement in efficiency is achieved by scribing laser lines onto the back surface of the wafer at a spacing of at least 0.5 mm and at a depth of less than 13 micrometers to preferentially precipitate chromium near the back surface and away from the junction region of the device. This provides an economical way to improve the deleterious effects of chromium, one of the impurities present in metallurgical grade silicon mateial.

Salama, A. M.↗
NASA NTRS1981

Nickel-doped silicon for solar cells

Large grain boundaries in polycrystals act as gettering centers for nickel precipitates, improving cell performance. Effects are described in report. Data on open-circuit voltage, short-circuit current, maximum power, and conversion efficiency for illuminated cells are compared with values for undoped cells. Dark forward current versus voltage is also measured for cell types.

Salama, A. M.↗
NASA NTRS1980

Characterization of deliberately nickel-doped silicon wafers and solar cells

Microstructural and electrical evaluation tests were performed on nickel-doped p-type silicon wafers before and after solar cell fabrication. The concentration levels of nickel in silicon were 5 x 10 to the 14th power, 4 x 10 to the 15th power, and 8 x 10 to the 15th power atoms/cu cm. It was found that nickel precipitated out during the growth process in all three ingots. Clumps of precipitates, some of which exhibited star shape, were present at different depths. If the clumps are distributed at depths approximately 20 micron apart and if they are larger than 10 micron in diameter, degradation occurs in solar cell electrical properties and cell conversion efficiency. The larger the size of the precipitate clump, the greater the degradation in solar cell efficiency. A large grain boundary around the cell effective area acted as a gettering center for the precipitates and impurities and caused improvement in solar cell efficiency. Details of the evaluation test results are given.

Salama, A. M.↗
NASA NTRS1980

Method of mitigating titanium impurities effects in p-type silicon material for solar cells

Microstructural evaluation tests performed on Cu-doped, Ti-doped and Cu/Ti doped p-type silicon single crystal wafers, before and after the solar cell fabrication, and evaluation of both dark forward and reverse I-V characteristic records for the solar cells produced from the corresponding silicon wafers, show that Cu mitigates the unfavorable effects of Ti, and thus provides for higher conversion efficiency, thereby providing an economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material.

Salama, A. M.↗
NASA NTRS1980

The effects of titanium impurities in N/+//P silicon solar cells

Microscopic and electrical measurements were performed to explain the degradation mechanisms associated with the presence of titanium impurities in silicon. The measurements included X-ray topography, transmission electron microscopy, and deep level transient spectroscopy, before and after processing. The results indicated the presence of TiO2 precipitates, the density of which increased after phosphorus diffusion. A majority carrier trapping level was observed in the wafers before processing. It was concluded that 10% of the Ti in the N(+)/P silicon solar cells formed electrically active centers which caused degradation of the cell junction. 14% of the remaining Ti precipitated out as TiO2, forming electrically active defects, which also caused junction degradation.

Salama, A. M.↗
NASA NTRS1978

The effects of copper and titanium on silicon solar cells

Copper-doped N/P silicon solar cells fabricated from the Czochralski grown single-crystal wafers were found to have good electrical characteristics, but the titanium-doped N/P silicon solar cells has considerably lower conversion efficiency. However, in the copper/titanium-doped solar cells, copper seems to mitigate the unfavorable effects of titanium. To explain this behavior, microstructural tests were performed on silicon wafers and solar cells doped with copper, titanium and copper/titanium. Dark forward and reverse I-V measurements were performed on the solar cells to correlate the microstructural defects with the p-n junction properties. It was found that copper precipitates were formed in the copper-doped and copper/titanium-doped wafers and cells. There was a significant voltage drop in the dark reverse I-V measurements of the titanium solar cells. Also, there were some electronically active defects in the depletion region of some titanium-doped cells. Reasons that lead to the above results are given in detail.

Salama, A. M.↗
NASA NTRS1973

Optimum shell design.

Comparison of two methods, namely Nedler and Mead's (1965) simplex method and Davidon's (1959) variable metric method, for achieving optimum design in terms of minimum weight for rotational shells under certain constraints. The superiority of one of the methods over the other is shown to depend, among other things, upon the form of the function to be minimized, and whether or not it is continuous everywhere in values and derivatives.

Salama, A. M.↗
NASA NTRS1973

On the dynamic stability of multilayer sandwich plates

Study of the dynamic stability of plates which are constructed of several alternating soft and hard layers and are subjected to time-dependent periodic in-plane loads. A theory that accounts for all of these effects is presented for multilayer sandwich plates. The plate thickness consists of (k - 1) orthotropic soft core layers sandwiched between k hard isotropic membrane layers, each of which may have a different thickness and elastic properties. It is assumed that the core layers carry only the transverse shear stresses, while the hard membrane layers carry the in-plane normal and shear stresses. The complementary variational principle for dynamics is used to derive the governing differential equations and the necessary boundary conditions for the dynamic stability of the sandwich plate. The equations governing the vibration of the plate and those governing its static stability are deduced from the more general equations for dynamic stability.

Salama, A. M.↗
NASA NTRS1972

Stress Analysis and Design of Silicon Solar Cell Arrays and Related Material Properties

A systematic approach is presented for the design of solar cell arrays to eliminate mechanical failures that might arise in components of the arrays in a thermal environment. A prerequisite to the approach is the characterization of material properties at different temperatures. Significant data is obtained for the thermal behavior of the silicon solar cell material and adhesives. Upon determining the mechanical and thermal material properties of the components of the solar cell array, utilizing a finite element idealization for predicting the stress fields in the components, and employing the von Mises failure criterion, potential failure areas in various design configurations in a given thermal environment are identified. Guide lines and means to optimize a given design are illustrated by two examples.

Salama, A. M.↗