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Sampath, Walajabad

Publications and source records attributed to Sampath, Walajabad.

7 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Developments for Novel Module Architecture for Lower CapEx and Improved Recyclability for c-Si PV Modules

Photovoltaic (PV) energy production is currently increasing at a significant rate. A novel module architecture has been demonstrated that has potential for reducing manufacturing cost while improving module reliability and recycling for c-Si PV which utilizes an edge-seal. Referred to as Edge Sealed Module (ESM), this architecture eliminates the vacuum lamination process and cross-linked encapsulants on the interior of the module. Functioning prototypes of c-Si have been fabricated for stress testing in collaboration with National Renewable Energy Laboratories (NREL). These modules are being tested and compared to traditionally manufactured modules. Based on preliminary results, this module architecture is a potentially viable solution for improving the manufacturing cost and recyclability of PV modules while enhancing module performance.

costs↗
DOE OSTI2024

First-Principles Study on the Role of Cu and Cl-Based Dopants in NiO

Utilization of wide band gap oxide-based materials in thin-film solar energy technologies has increased in recent years. Among the numerous candidate oxide materials, NiO has shown many desirable optoelectronic properties that are applicable to thin-film PV technologies such as cadmium telluride PV. However, one critical factor requiring further investigation is the p-type doping behavior of NiO, specifically when the cadmium telluride solar cell undergoes conventional processes such as copper doping and chlorine-based activation treatment. The previous literature has shown a large degree of variability in hole concentrations in NiO when copper is used as the primary dopant. This study uses first-principles computational modeling based on density functional theory coupled with defect equilibria calculations to quantitatively explore the role of copper and chlorine-based extrinsic dopants in the p-type doping activity of NiO. The study reveals the importance of extrinsic dopants and their binding interactions with nickel vacancies to effectively p-dope NiO. It is suggested that both the formation of V Ni + Cu Ni and V Ni + Cl O defect pairs under a supersaturated state of NiO are potential mechanisms for increasing hole densities. On the other hand, the production of 2Cu Ni severely limits the effectiveness of p-doping in NiO, even in the presence of the aforementioned defect pairs. Furthermore, the study provides a guideline for experimentalists interested in using copper or chlorine species to understand how to controllably p-dope NiO during thin-film synthesis.

chlorine↗
DOE OSTI2023

Novel Module Architecture for Lower CapEx and Improved Recyclability for c-Si PV Modules

Photovoltaic (PV) energy production is currently increasing at a rate at which recycling is becoming necessary. A novel module architecture has been demonstrated that has potential for high value recycling for c-Si PV. This architecture eliminates the vacuum lamination process and cross-linked en capsulants. Functioning prototypes of c-Si have been fabricated for stress testing in collaboration with NREL. These modules are being tested against traditionally manufactured modules. Based on preliminary results, this module architecture is a potentially viable solution for improving the manufacturing cost and recyclability of PV modules while retaining module performance.

computer architecture↗
DOE OSTI2023

CdTe-based thin film photovoltaics: Recent advances, current challenges and future prospects

Cadmium telluride (CdTe)-based cells have emerged as the leading commercialized thin film photovoltaic technology and has intrinsically better temperature coefficients, energy yield, and degradation rates than Si technologies. More than 30 GW peak (GWp) of CdTe-based modules are installed worldwide, multiple companies are in production, modules are shipping at up to 18.6% efficiency, and lab cell efficiency is above 22%. We review developments in the science and technology that have occurred over approximately the past decade. These achievements were enabled by manufacturing innovations and scaling module production, as well as maximizing photocurrent through window layer optimization and alloyed CdSe x Te 1-x (CST) absorbers. Improved chlorine passivation processes, film microstructure, and serendipitous Se defect passivation significantly increased minority carrier lifetime. Efficiencies >22% have been realized for both Cu and As doped CST-based cells. The path to further efficiency gains hinges primarily on increasing open circuit voltage (V oc ) and fill factor (FF) through innovations in materials, fabrication methods, and device stacks. Replacing the longstanding Cu doping with As doping is resulting in better module stability and is being translated to large-scale production. To realize 25% efficiency and >1 V V oc , research and development is needed to increase the minority carrier lifetime beyond 100 ns, reduce grain boundary and interface recombination, and tailor band diagrams at the front and back interfaces. Many of these goals have been realized separately however combining them together using scalable manufacturing approaches has been elusive to date. We review these achievements and outstanding opportunities for this remarkable photovoltaic technology.

14 SOLAR ENERGY↗
DOE OSTI2023

A comprehensive material study of CdSeTe films deposited with differing selenium compositions

The addition of selenium into CdTe to create the ternary alloy CdSeTe has been one of the most impactful advancements to CdTe-based photovoltaics in the last decade. CdSeTe/CdTe bilayer device structures have enabled a gain in short-circuit current due to the narrower bandgap of the alloy, with minimal to no loss in voltage. Intensity of photoluminescence and time-resolved photoluminescence measurements suggest this is due to an increase in carrier lifetime and concomitant greater fraction of radiative vs non-radiative recombination events which allows for a reduction in the voltage deficit. Here, in this work, we study the properties of as-deposited and CdCl 2 -treated CdSeTe films deposited by close-space sublimation under varying conditions from CdSeTe source charges with both 20 and 40 mol% CdSe. We find that the selenium content in the deposited films are substantially reduced from that of the source material. Additionally, deposition temperature, particularly that of the substrate, considerably affects the grain size, crystallinity, and photoluminescence of the material, illustrating the importance of source material selection and process optimization. Finally, we present evidence that the source material, and therefore the properties of the deposited films, change over time as the source material is used.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electro-Optical Characterization of Arsenic-Doped CdSeTe and CdTe Solar Cell Absorbers Doped in-situ During Close Space Sublimation

Most contemporary device models predict that an acceptor concentration of at least 10^16 cm^-3 is required to reach an open circuit voltage of 1 V in polycrystalline CdTe-based solar cells. While copper has traditionally been used as the de facto p-type dopant in polycrystalline cadmium telluride (CdTe) and cadmium selenide telluride (CdSeTe), reaching high acceptor concentrations has proved to be challenging in such devices due to significant dopant compensation. The acceptor concentration in copper-doped CdTe and CdSeTe typically ranges from 10^13 to 10^15 cm^-3 and routinely exhibit low external radiative efficiencies below 0.01%, limiting their implied voltage (i.e., quasi-Fermi level splitting) to approximately 900 mV. As an alternative to copper, this work explores the use of arsenic as a p-type dopant for CdTe and CdSeTe. Using a novel technique in which a thin layer of arsenic-containing material is deposited and used as a reservoir for arsenic to diffuse into a front layer of previously undoped material, this contribution demonstrates that high external radiative efficiencies are achievable, a direct result of combined high acceptor concentrations and long minority-carrier lifetimes in the absorber. This leads to improved implied voltages, and indicates that As-doping represents a promising pathway towards improving the external voltage of CdSeTe/CdTe solar cells.

cadmium telluride↗