Sampayan, Kristin Cortella

DOE OSTI2024

Partial discharge suppression in high voltage solid-state devices

Devices, methods and techniques are disclosed to suppress electrical discharge and breakdown in insulating or encapsulation material(s) applied to solid-state devices. In one example aspect, a multi-layer encapsulation film includes a first layer of a first dielectric material and a second layer of a second dielectric material. An interface between the first layer and the second layer is configured to include molecular bonds to prevent charge carriers from crossing between the first layer and the second layer. The multi-layer encapsulation configuration is structured to allow an electrical contact and a substrate of the solid-state device to be at least partially surrounded by the multi-layer encapsulation configuration.

Sampayan, Stephen↗

DOE OSTI2023

Flash radiotherapy accelerator

Methods, devices and systems for ultra-high dose radiotherapy are disclosed. The described techniques rely in-part on active switching control of a photoconductive switch during the time the accelerator is accelerating charged particles to produce the output radiation at the desired dose rates. One flash radiotherapy system includes an induction accelerator, and a controllable switch coupled to the induction accelerator. The switch is operable to produce a plurality of voltage pulses to drive the induction accelerator. The radiotherapy system also includes a radiation measurement device to measure output radiation produced by the radiotherapy system and provide feedback to the controllable switch. The controllable switch is operable to, based on the received feedback, modify an amplitude, shape, spacing, number or width of the voltage pulses that are supplied to the particle accelerator to deliver the desired output radiation.

Sampayan, Stephen E.↗

DOE OSTI2023

Partial discharge suppression in high voltage solid-state devices

Devices, methods and techniques are disclosed to suppress electrical discharge and breakdown in insulating or encapsulation material(s) applied to solid-state devices. In one example aspect, a multi-layer encapsulation film includes a first layer of a first dielectric material and a second layer of a second dielectric material. An interface between the first layer and the second layer is configured to include molecular bonds to prevent charge carriers from crossing between the first layer and the second layer. The multi-layer encapsulation configuration is structured to allow an electrical contact and a substrate of the solid-state device to be at least partially surrounded by the multi-layer encapsulation configuration.

Sampayan, Stephen↗

DOE OSTI2022

Photoconductive charge trapping apparatus

Techniques, systems, and devices are disclosed for implementing a photoconductive device performing bulk conduction. In one exemplary aspect, a photoconductive device is disclosed. The device includes a light source configured to emit light; a crystalline material positioned to receive the light from the light source, wherein the crystalline material is doped with a dopant that forms a mid-gap state within a bandgap of the crystalline material to control a recombination time of the crystalline material; a first electrode coupled to the crystalline material to provide a first electrical contact for the crystalline material, and a second electrode coupled to the crystalline material to provide a second electrical contact for the crystalline material, wherein the first and the second electrodes are configured to establish an electric field across the crystalline material, and the crystalline material is configured to exhibit a substantially linear transconductance in response to receiving the light.

Sampayan, Stephen↗