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Sanders, Anthony B.

Publications and source records attributed to Sanders, Anthony B..

SEE Transient Response of Crane Interpoint Single Output Point of Load DC-DC Converters

This study was undertaken to determine the single event effect and transient susceptibility of the Crane Interpoint Maximum Flexible Power (MFP) Single Output Point of Load DC/DC Converters for transient interruptions in the output signal and for destructive and non destructive events induced by exposing it to a heavy ion beam..

Sanders, Anthony B.↗

Impact of Spacecraft Shielding on Direct Ionization Soft Error Rates for Sub-130 nm Technologies

We use ray tracing software to model various levels of spacecraft shielding complexity and energy deposition pulse height analysis to study how it affects the direct ionization soft error rate of microelectronic components in space. The analysis incorporates the galactic cosmic ray background, trapped proton, and solar heavy ion environments as well as the October 1989 and July 2000 solar particle events.

Pellish, Jonathan A.↗

Impact of Spacecraft Shielding on Direct Ionization Soft Error Rates for sub-130 nm Technologies

We use ray tracing software to model various levels of spacecraft shielding complexity and energy deposition pulse height analysis to study how it affects the direct ionization soft error rate of microelectronic components in space. The analysis incorporates the galactic cosmic ray background, trapped proton, and solar heavy ion environments as well as the October 1989 and July 2000 solar particle events.

Pellish, Jonathan A.↗

Texas Instruments-Digital Signal Processor(TI-DSP)SMJ320F20 SEL Testing

This viewgraph presentation reviews the testing of the Texas Instrument Digital Signal Processor(TI-DSP)SMJ320F20. Tests were performed to screen for susceptibility to Single Event Latchup (SEL) and measure sensitivity as a function of Linear Energy Transfer (LET) for an application specific test setup. The Heavy Ion Testing of two TI-DSP SMJ320F240 devices experienced Single Event Latchup (SEL) conditions at an LET of 1.8 MeV/(mg/square cm) The devices were exposed from a fluence of 1.76 x l0(exp 3) to 5.00 x 10(exp 6) particles/square cm of the Neon, Argon and Krypton ion beams. For DI(sub DD) an average latchup current occurred at about 700mA, which is a magnitude of 10 over the nominal current of 700mA.

Sanders, Anthony B.↗