Engineering topics

Sandoval, S.

Publications and source records attributed to Sandoval, S..

3 records

DOE OSTI2018

Hard-switching reliability studies of 1200 V vertical GaN PiN diodes

Here, we report on reliability testing of vertical GaN (v-GaN) devices under continuous switching conditions of 500, 750, and 1000 V. Using a modified double-pulse test circuit, we evaluate 1200 V-rated v-GaN PiN diodes fabricated by Avogy. Forward current–voltage characteristics do not change over the stress period. Under the reverse bias, the devices exhibit an initial rise in leakage current, followed by a slower rate of increase with further stress. The leakage recovers after a day's relaxation which suggests that trapping of carriers in deep states is responsible. Overall, we found the devices to be robust over the range of conditions tested.

36 MATERIALS SCIENCE↗

DOE OSTI2017

A Highly Linear Temperature Sensor Using GaN-on-SiC Heterojunction Diode for High Power Applications

Not provided.

Engineering↗

DOE OSTI2015

Leveraging Safety Programs to Improve and Support Security Programs

There has been a long history of considering Safety, Security, and Safeguards (3S) as three functions of nuclear security design and operations that need to be properly and collectively integrated with operations. This paper specifically considers how safety programmes can be extended directly to benefit security as part of an integrated facility management programme. The discussion will draw on experiences implementing such a programme at Sandia National Laboratories’ Annular Research Reactor Facility. While the paper focuses on nuclear facilities, similar ideas could be used to support security programmes at other types of high-consequence facilities and transportation activities.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗