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Santiago, David I

Publications and source records attributed to Santiago, David I.

Leveraging Randomized Compiling for the QITE Algorithm

The success of the current generation of Noisy Intermediate-Scale Quantum (NISQ) hardware shows that quantum hardware may be able to tackle complex problems even without error correction. One outstanding issue is that of coherent errors arising from the increased complexity of these devices. These errors can accumulate through a circuit, making their impact on algorithms hard to predict and mitigate. Iterative algorithms like Quantum Imaginary Time Evolution are susceptible to these errors. This article presents the combination of both noise tailoring using Randomized Compiling and error mitigation with a purification. We also show that Cycle Benchmarking gives an estimate of the reliability of the purification. We apply this method to the Quantum Imaginary Time Evolution of a Transverse Field Ising Model and report an energy estimation and a ground state infidelity both below 1\%. Our methodology is general and can be used for other algorithms and platforms. We show how combining noise tailoring and error mitigation will push forward the performance of NISQ devices.

Ville, Jean-Loup↗

Localization and reduction of superconducting quantum coherent circuit losses

Quantum sensing and computation can be realized with superconducting microwave circuits. Qubits are engineered quantum systems of capacitors and inductors with non-linear Josephson junctions. They operate in the single-excitation quantum regime, photons of $27 \mu$eV at 6.5 GHz. Quantum coherence is fundamentally limited by materials defects, in particular atomic-scale parasitic two-level systems (TLS) in amorphous dielectrics at circuit interfaces.[1] The electric fields driving oscillating charges in quantum circuits resonantly couple to TLS, producing phase noise and dissipation. We use coplanar niobium-on-silicon superconducting resonators to probe decoherence in quantum circuits. By selectively modifying interface dielectrics, we show that most TLS losses come from the silicon surface oxide, and most non-TLS losses are distributed throughout the niobium surface oxide. Through post-fabrication interface modification we reduced TLS losses by 85% and non-TLS losses by 72%, obtaining record single-photon resonator quality factors above 5 million and approaching a regime where non-TLS losses are dominant. [1]M\"uller, C., Cole, J. H. & Lisenfeld, J. Towards understanding two-level-systems in amorphous solids: insights from quantum circuits. Rep. Prog. Phys. 82, 124501 (2019)

Altoé, M Virginia P↗