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Sarkozy, Stephen

Publications and source records attributed to Sarkozy, Stephen.

Sub-20-K Noise Temperature LNA for 67-90 GHz Frequency Band

Indium Phosphide MMIC LNAs are enabling new capabilities in instrument development. The development of arrays of hundreds of cryogenically-cooled millimeter wave receivers has previously been challenging, but is now achievable with highly repeatable MMIC processes and advances in cryogenic on-wafer testing of LNAs. We have developed InP HEMT LNA MMICs for the 67-90 GHz frequency band that is the last missing receiver system from the ALMA. These MMICs provided average performance of less than 22.5 K noise temperature over the frequency band and minimum noise temperature of 17.5 K at 72 GHz. These LNAs achieve NT=220K (NF=2.4dB) at 90 GHz for Earth remote sensing instrument on Sentinel-6. Our HRMR (High Resolution Microwave Radiometer) achieves NEDT < 0.05K enabling Sentinel-6 to measure coastal ocean topography at 3 km resolution with better than 1 cm accuracy.

Vorenen, Mikko↗

Cryogenic Low Noise MMIC Amplifiers for U-Band (40-60 GHz)

In this work, we describe monolithic millimeter-wave integrated circuit (MMIC) Low Noise Amplifier (LNA) and mixer designs for U-Band, also known as the WR19 waveguide band (40-60 GHz). The LNAs were fabricated in NGC’s 35 nm InP HEMT MMIC process. The MMICs were packaged in WR19 waveguide housings and tested for noise, both at room temperature and cryogenically. We present the results, including a comparison to the state-of-the-art, and discuss applications for amplifiers in this frequency range. To date, these are the first cryogenic 35 nm InP MMIC results covering the 40-60 GHz range. We achieved a noise temperature less than 30 K over the 40-60 GHz range, when the amplifiers were cryogenically cooled. These results are comparable with other results in the literature, and we believe are the lowest reported for MMICs in the 50-60 GHz range.

MMIC↗

Miniature Packaging Concept for LNAs in the 200-300 GHz Range

In this work, we describe new miniaturized low noise amplifier modules which we developed for incorporation in small-scale satellites or Cubesats, and which exhibit similar or better performance compared to previously reported LNAs in the literature. We have targeted the WR4 (170-260 GHz) and WR3 (220-325 GHz) waveguide bands for the module development. The modules include two different methods of E-plane probes which have been developed for low loss, and stability at high frequencies. MMIC LNAs were also developed for these frequency ranges and fabricated in Northrop Grumman Corporation's 35 nm InP HEMT technology, and we have experimentally verified that noise performance is lower than reported in prior work. The best results include a miniature LNA module with 550K noise at 224 GHz, and a wideband LNA module with 15 dB gain from 230-280 GHz.

WR4↗

A 75-116-Ghz LNA with 23-K Noise Temperature at 108 Ghz

In this paper we present the design and measurement results, both on-wafer and in package, of an ultra-low-noise and wideband monolithic microwave integrated circuit (MMIC) amplifier in the frequency range of 75 to 116 GHz. The three-stage amplifier packaged in a WR10 waveguide housing and fabricated using a 35-nm InP HEMT technology achieves a record noise temperature of 23 K at 108 GHz when cryogenically cooled to 27 K. The measured gain is 22 to 27 dB for frequency range of 75 to 116 GHz. Furthermore, the amplifier utilizes four finger devices with total gate width of 60 um resulting for improved linearity.

monolithic microwave integrated circuit (MMIC)↗

Low Noise Amplifiers for 140 Ghz Wide-Band Cryogenic Receivers

We report S-parameter and noise measurements for three different Indium Phosphide 35-nanometer-gate-length High Electron Mobility Transistor (HEMT) Low Noise Amplifier (LNA) designs operating in the frequency range centered on 140 gigahertz. When packaged in a Waveguide Rectangular-6.1 waveguide housing, the LNAs have an average measured noise figure of 3.0 decibels - 3.6 decibels over the 122-170 gigahertz band. One LNA was cooled to 20 degrees Kelvin and a record low noise temperature of 46 Kelvin, or 0.64 decibels noise figure, was measured at 152 gigahertz. These amplifiers can be used to develop receivers for instruments that operate in the 130-170 gigahertz atmospheric window, which is an important frequency band for ground-based astronomy and millimeter-wave imaging applications.

High Electron Mobility Transistors (HEMTs)↗

Amplifier Module for 260-GHz Band Using Quartz Waveguide Transitions

Packaging of MMIC LNA (monolithic microwave integrated circuit low-noise amplifier) chips at frequencies over 200 GHz has always been problematic due to the high loss in the transition between the MMIC chip and the waveguide medium in which the chip will typically be used. In addition, above 200 GHz, wire-bond inductance between the LNA and the waveguide can severely limit the RF matching and bandwidth of the final waveguide amplifier module. This work resulted in the development of a low-loss quartz waveguide transition that includes a capacitive transmission line between the MMIC and the waveguide probe element. This capacitive transmission line tunes out the wirebond inductance (where the wire-bond is required to bond between the MMIC and the probe element). This inductance can severely limit the RF matching and bandwidth of the final waveguide amplifier module. The amplifier module consists of a quartz E-plane waveguide probe transition, a short capacitive tuning element, a short wire-bond to the MMIC, and the MMIC LNA. The output structure is similar, with a short wire-bond at the output of the MMIC, a quartz E-plane waveguide probe transition, and the output waveguide. The quartz probe element is made of 3-mil quartz, which is the thinnest commercially available material. The waveguide band used is WR4, from 170 to 260 GHz. This new transition and block design is an improvement over prior art because it provides for better RF matching, and will likely yield lower loss and better noise figure. The development of high-performance, low-noise amplifiers in the 180-to- 700-GHz range has applications for future earth science and planetary instruments with low power and volume, and astrophysics array instruments for molecular spectroscopy. This frequency band, while suitable for homeland security and commercial applications (such as millimeter-wave imaging, hidden weapons detection, crowd scanning, airport security, and communications), also has applications to future NASA missions. The Global Atmospheric Composition Mission (GACM) in the NRC Decadel Survey will need low-noise amplifiers with extremely low noise temperatures, either at room temperature or for cryogenic applications, for atmospheric remote sensing.

Padmanabhan, Sharmila↗