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Sarusi, G.

Publications and source records attributed to Sarusi, G..

8 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Infrared to visible image up-conversion using optically addressed spatial light modulator utilizing liquid crystal and InGaAs photodiodes

Combination of InGaAs/InP heterojunction photodetector with nematic liquid crystal (LC) as the electro-optic modulating material for optically addressed spatial light modulator for short wavelength infra-red (SWIR) to visible light image conversion was designed, fabricated, and tested. The photodetector layer is composed of 640 × 512 photodiodes array based on heterojunction InP/InGaAs having 15 μm pitch on InP substrate and with backside illumination architecture. The photodiodes exhibit extremely low, dark current at room temperature, with optimum photo-response in the SWIR region. The photocurrent generated in the heterojunction, due to the SWIR photons absorption, is drifted to the surface of the InP, thus modulating the electric field distribution which modifies the orientation of the LC molecules. This device can be attractive for SWIR to visible image upconversion, such as for uncooled night vision goggles under low ambient light conditions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1994

Design and performance of very long-wavelength GaAs/Al(x)Ga(1-x)As quantum-well infrared photodetectors

We present an extensive and detailed study of very long wavelength quantum well infrared photodetectors covering the spectral region between 14 and 20 micrometers. Measurements were made on seven different molecular beam epitaxy grown samples having different well widths and barrier heights. In this study we combine experimental results with theoretical analysis and focus on the relationship between the quantum well structure and detector performance, i.e., responsivity, dark current, dynamic resistance, noise current, optical-gain, and detectivity. These results provide the basis for further optimization, and the detector parameters needed for the design of the readout circuit for focal plane arrays.

Sarusi, G.↗
NASA NTRS1994

Optimization of two dimensional gratings for very long wavelength quantum well infrared photodetectors

We have performed a detailed study of two-dimensional grating coupling for quantum well infrared photodetectors in the very long wavelength spectral region lambda is approximately 16 - 17 microns. Using calculations based on the modal expansion method we quantitatively explain the double peaked responsivity spectrum. By optimizing the grating parameters we achieve a normal incidence responsivity and detectivity which are three times larger than the 45 deg angle of incidence geometry.

Sarusi, G.↗
NASA NTRS1994

High Performance InGaAs/GaAs Quantum Well Infrared Photodetectors

We have measured the optical and transport properties of In(0.2)Ga(0.8)As/GaAs quantum well infrared photodetectors based on bound-to-bound, bound-to-quasibound, and bound-to-continuum intersubband transitions. Excellent hot electron transport and high detectivity D*=1.8 x 1O(exp 10) cm square root of Hz/W (at lambda(sub p)=16.7 microns) were achieved at temperature T=40 K.

Gunapala, S. D.↗
NASA NTRS1994

Very Long Wavelength In(x)Ga(1-x)As/GaAs Quantum Well Infrared Photodetectors

We demonstrate a long wavelength (lambda(sub c)=20 microns) quantum well infrared photodetector using nonlattice matched In(x),Ga(l-x)As/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system. A detectivity of D*=9.7 x 10(exp 10) cm square root of Hz/W at T= 10 K has been achieved.

Gunapala, S. D.↗
NASA NTRS1994

Infrared Detectors Reach New Lengths

Infrared detectors operating from mid IR wavelengths to very long wavelength IR are of great interest for a variety of ground based and space based applications such as night vision, early warning systems, navigation, flight control systems, weather monitoring, and astronomy.

infrared detectors↗
NASA NTRS1993

Very Long Wavelength InxGal-xAs/GaAs Quantum Well Infrared Photodetectors

We demonstrate the first long-wavelength (=20) quantum well infrared photodetector using non-lattice matched InGaAs/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system.

long-wavelength quantum non-lattice GaAs detectors↗