DOE OSTI2022
The mass transport mechanisms of Ti in TiO 2 :SiO 2 and Ge in GeO 2 :SiO 2 direct ink write, additively manufactured glasses were studied. Due to the low solubility of Ti in SiO2 and high melting point of TiO 2 relative to SiO 2 , Ti transport was found to occur via solid state interdiffusion between adjoining SiO 2 and TiO 2 precursor particles. The diffusivity of titanium in SiO 2 measured over typical sintering temperatures (1000-1300 °C) using Rutherford backscattering spectrometry was D = 9.1 × 10 -7 [m2/sec] exp ($\frac{378[\frac{kJ}{mol}]}{RT}$. This provides an estimate of ~30 nm for the diffusion length under typical sintering conditions (2 hrs. at 1200 °C). Although Ti and Ge have similar diffusivities in SiO 2 glass at low concentrations, GeO 2 was found to be much more mobile during the sintering of printed GeO 2 :SiO 2 green bodies. This was evident in glasses with phase separated GeO 2 regions over length scales of ~10 μm and in experiments involving binary xerogels in which GeO 2 migrated over ~10 μm through cracked, porous SiO 2 layers. Large phase separated regions and long transport lengths in GeO 2 :SiO 2 suggest that the transport of GeO 2 occurs prior to the densification of the SiO 2 matrix via an alternative mechanism such as capillary flow. These results inform important considerations in the design of index modifying inks for the direct ink write process, namely initial precursor phase, mutual solubility with the base SiO 2 glass, and mass transport throughout the sintering process.