Engineering topics

Sayeed, Md. Nizam

Publications and source records attributed to Sayeed, Md. Nizam.

3 records

DOE OSTI2021

Effect of substrate temperature on the growth of Nb$_3$Sn film on Nb by multilayer sputtering

Nb3Sn films were fabricated by multilayer sequential sputtering on Nb substrates at substrate temperatures ranging from room temperature to 250 °C. The film material properties were characterized by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, atomic force microscopy, and transmission electron microscopy. The films’ superconducting properties were studied by four-point probe resistivity measurements from room temperature to below the superconducting critical temperature Tc. The highest Tc was17.76 K, when the multilayers were deposited at room temperature. A superconducting Nb3Sn thin film with a smoother surface morphology but a lower Tc of 17.58 K was obtained on the film deposited at a substrate temperature of 250 °C.

Sayeed, Md. Nizam↗

DOE OSTI2021

Properties of Nb3Sn films fabricated by magnetron sputtering from a single target

Superconducting Nb3Sn films were fabricated on sapphire and fine grain Nb substrates by magnetron sputtering from a single stoichiometric Nb3Sn target. The structural, morphological and superconducting properties of the films annealed for 24 h at temperatures of 800-1000 {\deg}C were investigated. The effect of the annealing time at 1000 {\deg}C was examined for 1, 12, and 24 h. The film properties were characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, energy dispersive X-ray spectroscopy, and Raman spectroscopy. The DC superconducting properties of the films were characterized by a four-point probe measurement down to cryogenic temperatures. The RF surface resistance of films was measured over a temperature range of 6-23 K using a 7.4 GHz sapphire-loaded Nb cavity. As-deposited Nb3Sn films on sapphire had a superconducting critical temperature of 17.21 K, which improved to 17.83 K when the film was annealed at 800 {\deg}C for 24 h. For the films annealed at 1000 {\deg}C, the surface Sn content was reduced to ~11.3 % for an annealing time of 12 h and to ~4.1 % for an annealing time of 24 h. The Raman spectra of the films confirmed the microstructural evolution after annealing. The RF superconducting critical temperature of the as-deposited Nb3Sn films on Nb was 16.02 K, which increased to 17.44 K when the film was annealed at 800 {\deg}C for 24 h.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2021

Microstructural and Superconducting Radiofrequency Properties of Multilayer Sequentially Sputtered Nb 3 Sn films

Nb 3 Sn is considered as a potential candidate for superconducting radiofrequency cavities for particle acceleration due to its higher transition temperature of 18.3 K and higher superheating field of 400 mT. Nb 3 Sn films can be grown inside the surface of a Nb cavity by sequentially sputtering multiple layers of Nb and Sn thin films followed by annealing at 950 °C for 3 h. We report on the properties of Nb 3 Sn films grown on Nb substrates by magnetron sputtering. The films’ crystal structure, surface morphology, and composition were characterized by X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. The films had a polycrystalline Nb 3 Sn structure with a fine-grain surface and an atomic Sn composition of ~23%. The RF surface resistance of the films was measured for different temperatures at 7.4 GHz to understand the feasibility of this method for the SRF application. The RF surface resistance of the films was 5 mΩ at 12 K, which is about 2 orders of magnitude higher than 60 μΩ previously measured in Nb 3 Sn films grown by Sn vapor diffusion. Finally, the sputtered film had a superconducting transition at 17.2 K, which is also lower than 17.9 K observed in Nb 3 Sn film prepared by vapor diffusion.

43 PARTICLE ACCELERATORS↗