TCAD simulations of humidity-induced breakdown of silicon sensors
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Ninca, I-S. (ORCID:0000000181588966)↗
Engineering topics
Scharf, C.
Publications and source records attributed to Scharf, C..
Humidity sensitivity of large area silicon sensors: Study and implications
The production of large area sensors is one of the main challenges that the ATLAS collaboration faces for the new Inner-Tracker full-silicon detector. During the prototype fabrication phase for the High Luminosity Large Hadron Collider upgrade, several ATLAS institutes observed indications of humidity sensitivity of large area sensors, even at relative humidities well below the dew point. Specifically, prototype Barrel and End-Cap silicon strip sensors fabricated in 6-inch wafers manifest a prompt decrease of the breakdown voltage when operating under high relative humidity, adversely affecting the performance of the sensors. In addition to the investigation of these prototype sensors, a specific fabrication batch with special passivation is also studied, allowing for a deeper understanding of the responsible mechanisms. Here we present an extensive study of this behaviour on large area sensors. The locations of the hotspots at the breakdown voltage at high humidity are revealed using different infrared thermography techniques. Several palliative treatments are attempted, proving the influence of sensor cleaning methods, as well as baking, on the device performance, but no improvement on the humidity sensitivity was achieved. Furthermore, a study of the incidence of the sensitivity in different batches is also presented, introducing a hypothesis of the origins of the humidity sensitivity associated to the sensor edge design, together with passivation thickness and conformity. Several actions to be taken during sensor production and assembly are extracted from this study, in order to minimize the impact of humidity sensitivity on the performance of large area silicon sensors for High Energy Physics experiments.
47 OTHER INSTRUMENTATION↗
The Evolution of the Cluster X-ray Scaling Relations in the Wide Angle ROSAT Pointed Survey Sample at 0.6 < z < 1.0
The X-ray properties of a sample of 11 high-redshift (0.6 < z < 1 .O) clusters observed with Chardm and/or XMM-Newton are used to investigate the evolution of the cluster scaling relations. The observed evolution in the normalization of the L-T, M-T, M(sub 2)-T and M-L relations is consistent with simple self-similar predictions, in which the properties of clusters reflect the properties of the Universe at their redshift of observation. Under the assumption that the model of self-similar evolution is correct and that the local systems formed via a single spherical collapse, the high-redshift L-T relation is consistent with the high-z clusters having virialized at a significantly higher redshift than the local systems. The data are also consistent with the more realistic scenario of clusters forming via the continuous accretion of material. The slope of the L-T relation at high redshift (B = 3.32 +/- 0.37) is consistent with the local relation, and significantly steeper than the self-similar prediction of B = 2. This suggests that the same non-gravitational processes are responsible for steepening the local and high-z relations, possibly occurring universally at z is approximately greater than 1 or in the early stages of the cluster formation, prior to their observation. The properties of the intracluster medium at high redshift are found to be similar to those in the local Universe. The mean surface-brightness profile slope for the sample is Beta = 0.66 +/- 0.05, the mean gas mass fractions within R(sub 2500(z)) and R(200(z)) are 0.069 +/- 0.012 and 0.11 +/- 0.02, respectively, and the mean metallicity of the sample is 0.28 +/- 0.11 Z(sub solar).
Maughan, B. J.↗