Engineering topics
Schaub, Samuel C.
Publications and source records attributed to Schaub, Samuel C..
Laser-driven semiconductor switch for generating nanosecond pulses from a megawatt gyrotron
A laser-driven semiconductor switch (LDSS) employing silicon (Si) and gallium arsenide (GaAs) wafers has been used to produce nanosecond-scale pulses from a 3 μs, 110 GHz gyrotron at the megawatt power level. Photoconductivity was induced in the wafers using a 532nm laser, which produced 6 ns, 230 mJ pulses. Irradiation of a single Si wafer by the laser produced 110 GHz RF pulses with a 9 ns width and >70% reflectance. Under the same conditions, a single GaAs wafer yielded 24 ns 110 GHz RF pulses with >78% reflectance. For both semiconductor materials, a higher value of reflectance was observed with increasing 110 GHz beam intensity. Using two active wafers, pulses of variable length down to 3 ns duration were created. The switch was tested at incident 110 GHz RF power levels up to 600 kW. A 1-D model is presented that agrees well with the experimentally observed temporal pulse shapes obtained with a single Si wafer. The LDSS has many potential uses in high power millimeter-wave research, including testing of high-gradient accelerator structures.
Design and High-Power Test of an Internal Coupler to HE 11 Mode in Corrugated Waveguide for High-Power Gyrotrons
Gyrotrons produce power in high-order, transverse electric modes that are typically converted to a Gaussian beam inside the tube. In fusion plasma heating applications, the power is transmitted through a diamond window to an external mirror optical unit where it is coupled into an HE 11 mode in corrugated waveguide. A new coupler is described that couples the cavity RF power directly into corrugated waveguide inside the gyrotron. A high power gyrotron with the improved coupler was tested using 1-MW, 3-μs pulses and demonstrated equivalent power and efficiency as a traditional coupler with HE 11 mode output in corrugated waveguide. In addition, higher HE 11 mode purity was achieved at the gyrotron output.
Prototyping high-gradient mm-wave accelerating structures
We present single-cell accelerating structures designed for high-gradient testing at 110 GHz. The purpose of this work is to study the basic physics of ultrahigh vacuum RF breakdown in high-gradient RF accelerators. The accelerating structures are π-mode standing-wave cavities fed with a TM 01 circular waveguide. The structures are fabricated using precision milling out of two metal blocks, and the blocks are joined with diffusion bonding and brazing. The impact of fabrication and joining techniques on the cell geometry and RF performance will be discussed. First prototypes had a measured Q 0 of 2800, approaching the theoretical design value of 3300. The geometry of these accelerating structures are as close as practical to singlecell standing-wave X-band accelerating structures more than 40 of which were tested at SLAC. This wealth of X-band data will serve as a baseline for these 110 GHz tests. Furthermore, the structures will be powered with short pulses from a MW gyrotron oscillator. RF power of 1 MW may allow an accelerating gradient of 400 MeV/m to be reached.