Engineering topics

Scheiman, David

Publications and source records attributed to Scheiman, David.

At least 19 records

DOE OSTI2020

Sputtered indium tin oxide as a recombination layer formed on the tunnel oxide/poly-Si passivating contact enabling the potential of efficient monolithic perovskite/Si tandem solar cells

We focus on utilizing sputtered indium tin oxide (ITO) as a recombination layer, having low junction damage to an n-type silicon solar cell with a front-side tunnel oxide passivating electron contact, thereby enabling the development of a high efficiency monolithic perovskite/Si tandem device. High transparency and low resistivity ITO films are deposited via low power DC magnetron sputtering at room temperature onto a front-side thin SiO x /n + poly-Si contact in a complete Cz n-Si cell with a back-side Al 2 O 3 /SiN x passivating boron-diffused p + -emitter on a random pyramid textured surface. We report the cell characteristics before and after ITO sputtering, and we find a cure at 250 °C in air is highly effective at mitigating any sputtering induced damage. Our ITO coated sample resulted in an implied open-circuit voltage (iV oc ) of 684.7 ± 11.3 mV with the total saturation current density of 49.2 ± 14.8 fA/cm 2 , an implied fill factor (iFF) of 81.9 ± 0.8%, and a contact resistivity in the range of 60 mΩ-cm 2 to 90 mΩ-cm 2 . After formation of a local Ag contact to the rear emitter and sputtered ITO film as the front-side contact without grid fingers, the pseudo-efficiency of 20.2 ± 0.5% was obtained with the V oc of 670.4 ± 7 mV and pseudo FF of 77.3 ± 1.3% under simulated one sun with the calculated short-circuit current density of 30.9 mA/cm 2 from the measured external quantum efficiency. Furthermore, our modelling result shows that efficiency exceeding 25% under one sun is practically achievable in perovskite/Si tandem configuration using the ITO recombination layer connecting a perovskite top cell and a poly-Si bottom cell.

14 SOLAR ENERGY↗

DOE OSTI2017

GaSb‐Based Solar Cells for Full Solar Spectrum Energy Harvesting

Abstract In this work, a multijunction solar cell is developed on a GaSb substrate that can efficiently convert the long‐wavelength photons typically lost in a multijunction solar cell into electricity. A combination of modeling and experimental device development is used to optimize the performance of a dual junction GaSb/InGaAsSb concentrator solar cell. Using transfer printing, a commercially available GaAs‐based triple junction cell is stacked mechanically with the GaSb‐based materials to create a four‐terminal, five junction cell with a spectral response range covering the region containing >99% of the available direct‐beam power from the Sun reaching the surface of the Earth. The cell is assembled in a mini‐module with a geometric concentration ratio of 744 suns on a two‐axis tracking system and demonstrated a combined module efficiency of 41.2%, measured outdoors in Durham, NC. Taking into account the measured transmission of the optics gives an implied cell efficiency of 44.5%.

Lumb, Matthew P.↗

DOE OSTI2016

Concentrator photovoltaic module architectures with capabilities for capture and conversion of full global solar radiation

Significance Concentrator photovoltaic (CPV) systems, wherein light focuses onto multijunction solar cells, offer the highest efficiencies in converting sunlight to electricity. The performance is intrinsically limited, however, by an inability to capture diffuse illumination, due to narrow acceptance angles of the concentrator optics. Here we demonstrate concepts where flat-plate solar cells mount onto the backplanes of the most sophisticated CPV modules to yield an additive contribution to the overall output. Outdoor testing results with two different hybrid module designs demonstrate absolute gains in average daily efficiencies of between 1.02% and 8.45% depending on weather conditions. The findings suggest pathways to significant improvements in the efficiencies, with economics that could potentially expand their deployment to a wide range of geographic locations.

14 SOLAR ENERGY↗

NASA NTRS2011

Alpha voltaic batteries and methods thereof

An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.

Raffaelle, Ryne P.↗

NASA NTRS2011

Alpha voltaic batteries and methods thereof

Raffaelle, Ryne P.↗

NASA NTRS2008

Advanced Solar Cell and Array Technology for NASA Deep Space Missions

A recent study by the NASA Glenn Research Center assessed the feasibility of using photovoltaics (PV) to power spacecraft for outer planetary, deep space missions. While the majority of spacecraft have relied on photovoltaics for primary power, the drastic reduction in solar intensity as the spacecraft moves farther from the sun has either limited the power available (severely curtailing scientific operations) or necessitated the use of nuclear systems. A desire by NASA and the scientific community to explore various bodies in the outer solar system and conduct "long-term" operations using using smaller, "lower-cost" spacecraft has renewed interest in exploring the feasibility of using photovoltaics for to Jupiter, Saturn and beyond. With recent advances in solar cell performance and continuing development in lightweight, high power solar array technology, the study determined that photovoltaics is indeed a viable option for many of these missions.

Piszczor, Michael↗

NASA NTRS2007

GaAs Photovoltaics on Polycrystalline Ge Substrates

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

Wilt, David M.↗

NASA NTRS2007

Development of a Quantum Dot, 0.6 eV InGaAs Thermophotovoltaic (TPV) Converter

Thermophotovoltaic (TPV) power conversion has to date demonstrated conversion efficiencies exceeding 20% when coupled to a heat source. Current III-V semiconductor TPV technology makes use of planar devices with bandgaps tailored to the heat source. The efficiency can be improved further by increasing the collection efficiency through the incorporation of InAs quantum dots. The use of these dots can provide sub-gap absorption and thus improve the cell short circuit current without the normal increase in dark current associated with lowering the bandgap. We have developed self-assembled InAs quantum dots using the Stranski-Krastanov growth mode on 0.74 eV In0.53GaAs lattice-matched to InP and also on lattice-mismatched 0.6 eV In0.69GaAs grown on InP through the use of a compositionally graded InPAsx buffer structure, by metalorganic vapor phase epitaxy (MOVPE). Atomic force microscopy (AFM) measurements showed that the most reproducible dot pattern was obtained with 5 monolayers of InAs grown at 450 C. The lattice mismatch between InAs and In0.69GaAs is only 2.1%, compared to 3.2% between InAs and In0.53GaAs. The smaller mismatch results in lower strain, making dot formation somewhat more complicated, resulting in quantum dashes, rather than well defined quantum dots in the lattice-mismatched case. We have fabricated 0.6 eV InGaAs planer TPV cells with and without the quantum dashes

Forbes, David↗

NASA NTRS2005

Progress of the Dust Accumulation and Removal Technology Experiment (DART) for the Mars 2001 Lander

Dust deposition could be a significant problem for photovoltaic array operation for long duration missions on the surface of Mars. Measurements made by Pathfinder showed 0.3 percent loss of solar array performance per day due to dust obscuration. We have designed an experiment package, "DART", which is part of the Mars ISPP Precursor (MIP) package, to fly on the Mars-2001 Surveyor Lander. This mission, to launch in April 2001, will arrive on Mars in January 2002. The DART experiment is designed to quantify dust deposition from the Mars atmosphere, measure the properties of settled dust, measure the effect of dust deposition on array performance, and test several methods of clearing dust from solar cells.

Jenkins, Phillip↗

NASA NTRS2005

Design and Performance of a Triple Source Air Mass Zero Solar Simulator

Simulating the sun in a laboratory for the purpose of measuring solar cells has long been a challenge for engineers and scientists. Multi-junction cells demand higher fidelity of a solar simulator than do single junction cells, due to a need for close spectral matching as well as AM0 intensity. A GaInP/GaAs/Ge solar cell for example, requires spectral matching in three distinct spectral bands (figure 1). A commercial single source high-pressure xenon arc solar simulator such as the Spectrolab X-25 at NASA Glenn Research Center, can match the top two junctions of a GaInP/GaAs/Ge cell to within 1.3% mismatch, with the GaAs cell receiving slightly more current than required. The Ge bottom cell however, is mismatched +8.8%. Multi source simulators are designed to match the current for all junctions but typically have small illuminated areas, less uniformity and less beam collimation compared to an X-25 simulator. It was our intent when designing a multi source simulator to preserve as many aspects of the X-25 while adding multi-source capability.

Jenkins, Phillip↗

NASA NTRS2005

High-temperature Solar Cell Development

The vast majority of space probes to date have relied upon photovoltaic power generation. If future missions designed to probe environments close to the sun (Figure 1) will be able to use such power generation, solar cells that can function at high temperatures, under high light intensity, and high radiation conditions must be developed. The significant problem is that solar cells lose performance at high temperatures.

Landis, Geoffrey A.↗

NASA NTRS2005

Historical Precision of an Ozone Correction Procedure for AM0 Solar Cell Calibration

In an effort to improve the accuracy of the high altitude aircraft method for calibration of high band-gap solar cells, the ozone correction procedure has been revisited. The new procedure adjusts the measured short circuit current, Isc, according to satellite based ozone measurements and a model of the atmospheric ozone profile then extrapolates the measurements to air mass zero, AMO. The purpose of this paper is to assess the precision of the revised procedure by applying it to historical data sets. The average Isc of a silicon cell for a flying season increased 0.5% and the standard deviation improved from 0.5% to 0.3%. The 12 year average Isc of a GaAs cell increased 1% and the standard deviation improved from 0.8% to 0.5%. The slight increase in measured Isc and improvement in standard deviation suggests that the accuracy of the aircraft method may improve from 1% to nearly 0.5%.

Snyder, David B.↗

NASA NTRS2004

Extended Temperature Solar Cell Technology Development

Future NASA missions will require solar cells to operate both in regimes closer to the sun, and farther from the sun, where the operating temperatures will be higher and lower than standard operational conditions. NASA Glenn is engaged in testing solar cells under extended temperature ranges, developing theoretical models of cell operation as a function of temperature, and in developing technology for improving the performance of solar cells for both high and low temperature operation.

Landis, Geoffrey A.↗

NASA NTRS2003

Integrated Micro-Power System (IMPS) Development at NASA Glenn Research Center

Glenn Research Center (GRC) has a long history of energy related technology developments for large space related power systems, including photovoltaics, thermo-mechanical energy conversion, electrochemical energy storage. mechanical energy storage, power management and distribution and power system design. Recently, many of these technologies have begun to be adapted for small, distributed power system applications or Integrated Micro-Power Systems (IMPS). This paper will describe the IMPS component and system demonstration efforts to date.

Wilt, David↗

NASA NTRS2003

Historical Precision of an Ozone Correction Procedure for AMO Solar Cell Calibration

In an effort to improve the accuracy of the high altitude aircraft method for calibration of high band-gap solar cells, the ozone correction procedure has been revisited. The new procedure adjusts the measured short circuit current, Isc, according to satellite based ozone measurements and a model of the atmospheric ozone profile then extrapolates the measurements to air mass zero, AM0. The purpose of this paper is to assess the precision of the revised procedure by applying it to historical data sets. The average Isc of a silicon cell for a flying season increased 0.5% and the standard deviation improved from 0.5% to 0.3% The 12 year average Isc of a GaAs cell increased 1% and the standard deviation improved from 0.8% to 0.5%. The slight increase in measured Isc and improvement in standard deviation suggests that the accuracy of the aircraft method may improve from 1% to nearly 0.5%.

Snyder, David B.↗

NASA NTRS2002

CIGS2 Thin-Film Solar Cells on Flexible Foils for Space Power

CuIn(1-x)Ga(x)S2 (CIGS2) thin-film solar cells are of interest for space power applications because of the near optimum bandgap for AM0 solar radiation in space. CIGS2 thin film solar cells on flexible stainless steel (SS) may be able to increase the specific power by an order of magnitude from the current level of 65 Wkg(sup -1). CIGS solar cells are superior to the conventional silicon and gallium arsenide solar cells in the space radiation environment. This paper presents research efforts for the development of CIGS2 thin-film solar cells on 127 micrometers and 20 micrometers thick, bright-annealed flexible SS foil for space power. A large-area, dual-chamber, inline thin film deposition system has been fabricated. The system is expected to provide thickness uniformity of plus or minus 2% over the central 5" width and plus or minus 3% over the central 6" width. During the next phase, facilities for processing larger cells will be acquired for selenization and sulfurization of metallic precursors and for heterojunction CdS layer deposition both on large area. Small area CIGS2 thin film solar cells are being prepared routinely. Cu-rich Cu-Ga/In layers were sputter-deposited on unheated Mo-coated SS foils from CuGa (22%) and In targets. Well-adherent, large-grain Cu-rich CIGS2 films were obtained by sulfurization in a Ar: H2S 1:0.04 mixture and argon flow rate of 650 sccm, at the maximum temperature of 475 C for 60 minutes with intermediate 30 minutes annealing step at 120 C. Samples were annealed at 500 C for 10 minutes without H2S gas flow. The intermediate 30 minutes annealing step at 120 C was changed to 135 C. p-type CIGS2 thin films were obtained by etching the Cu-rich layer segregated at the surface using dilute KCN solution. Solar cells were completed by deposition of CdS heterojunction partner layer by chemical bath deposition, transparent-conducting ZnO/ZnO: Al window bilayer by RF sputtering, and vacuum deposition of Ni/Al contact fingers through metal mask. PV parameters of a CIGS2 solar cell on 127 micrometers thick SS flexible foil measured under AM 0 conditions at NASA GRC were: V(sub oc) = 802.9 mV, J(sub sc) = 25.07 mA per square centimeters, FF = 60.06%, and efficiency 0 = 8.84%. For this cell, AM 1.5 PV parameters measured at NREL were: V(sub oc) = 788 mV, J(sub sc) = 19.78 mA per square centimeter, FF = 59.44%, efficiency 0 = 9.26%. Quantum efficiency curve showed a sharp QE cutoff equivalent to CIGS2 bandgap of approximately 1.50 eV, fairly close to the optimum value for efficient AM0 PV conversion in the space.

Dhere, Neelkanth G.↗

NASA NTRS2002

Overview of Photovoltaic Calibration and Measurement Standards at GRC

Photovoltaic (PV) systems (cells and arrays) for spacecraft power have become an international market. This market demands accurate prediction of the solar array power output in space throughout the mission life of the spacecraft. Since the beginning of space flight, space-faring nations have independently developed methods to calibrate solar cells for power output in low Earth orbit (LEO). These methods rely on terrestrial, laboratory, or extraterrestrial light sources to simulate or approximate the air mass zero (AM0) solar intensity and spectrum.

Baraona, Cosmo↗

NASA NTRS2002

Advance Power Technology Demonstration on Starshine 3

The Starshine 3 satellite will carry several power technology demonstrations. Since Starshine 3 is primarily a passive experiment and does not need electrical power to successfully complete its mission, the requirement for a highly reliable power system is greatly reduced. This creates an excellent opportunity to test new power technologies. Several government and commercial interests have teamed up to provide Starshine 3 with a small power system using state-of-the-art components. Starshine 3 will also fly novel integrated microelectronic power supplies (IMPS) for evaluation.

Jenkins, Phillip↗