Engineering topics

Schmidt, F. A.

Publications and source records attributed to Schmidt, F. A..

5 records

NASA NTRS1984

Electrotransport and diffusivity of molybdenum, rhenium, tungsten, and zirconium in beta-thorium

The electric mobilities, diffusivities, and effective valences were determined for molybdenum, rhenium, tungsten, and zirconium in beta-thorium. All four solutes migrated in the same direction as the electron flow. Rhenium and molybdenum were found to be very mobile, with tungsten somewhat slower. Zirconium was found to move at a rate near that of the self-diffusion of beta-thorium, viz., about 10 to the -11th sq m/s at 1500 C. The electromigration velocities showed a similar trend. A comparison was made between experimental data obtained by scanning laser mass spectrometry and theoretical transport equations for two purification experiments. Good agreement was obtained with both the concentration profile predicted by DeGroot and the purification ratio predicted by Verhoeven.

Schmidt, F. A.↗

NASA NTRS1981

Hydrogen partitioning in pure cast aluminum as determined by dynamic evolution rate measurements

Hydrogen in pure aluminum can be found in two different states. One is related to a presence in gas-filled pores, while the other state involves the formation of a solid solution between hydrogen and aluminum. The considered investigation is concerned with the distribution of the hydrogen between various states. A dynamic technique is employed to measure the evolution of hydrogen from commercially available samples of polycrystalline pure aluminum under ultrahigh vacuum conditions. The obtained data are compared with the results of a statistical analysis concerning the porosity in the cast aluminum. It was found that more than 99 pct of the hydrogen in the aluminum is located in large pores. Less than 1 pct of the hydrogen is partitioned between the solid solution and the small pores.

Outlaw, R. A.↗

NASA NTRS1979

Polycrystalline silicon on tungsten substrates

Thin films of electron-beam-vaporized silicon were deposited on fine-grained tungsten substrates under a pressure of about 1 x 10 to the -10th torr. Mass spectra from a quadrupole residual-gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. During separate silicon depositions, the atomically clean substrates were maintained at various temperatures between 400 and 780 C, and deposition rates were between 20 and 630 A min. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition, and annealing. Auger depth profiling, X-ray analysis, and SEM in the topographic and channeling modes were utilized to characterize the samples with respect to silicon-metal interface, interdiffusion, silicide formation, and grain size of silicon. The onset of silicide formation was found to occur at approximately 625 C. Above this temperature tungsten silicides were formed at a rate faster than the silicon deposition. Fine-grain silicon films were obtained at lower temperatures.

Bevolo, A. J.↗

NASA NTRS1979

Electrotransport purification of thorium under low pressure conditions

It was demonstrated that the ultrapurification of refractory metals by electrotransport refining could best be accomplished in the noncontaminating environment of an orbiting low density materials laboratory such as the Molecular Shield Device. Refining experiments were performed at 2 x 10 to the -12th Torr which resulted in the preparation of small quantities of the World's purest thorium metal. The microgravity occurring in orbit was simulated electromagnetically and shown to be advantageous in eliminating grain-sliding caused by the plastic deformation of the sample at high temperature. The electrotransport sample assembly was tested in several environments including simulated solar irradiation, coldness and darkness and under various pressure conditions. Ultrapure single crystals of alpha thorium were also prepared and characterized. Laboratory electronics for the experiment were developed and a totally automatic control system was used to heat the specimens.

Schmidt, F. A.↗

NASA NTRS1979

Efficient solar cells by space processing

Thin films of electron beam evaporated silicon were deposited on molybdenum, tantalum, tungsten and molybdenum disilicide under ultrahigh vacuum conditions. Mass spectra from a quadrapole residual gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry. The presence of phosphorus in the silicon was responsible for attaining elevated temperatures with silicide formations. Heteroepitaxial silicon growth was sensitive to the presence of oxygen during deposition, the rate and length of deposition as well as the substrate orientation.

Schmidt, F. A.↗