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Schneble, Olivia D.

Publications and source records attributed to Schneble, Olivia D..

5 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Modeling the Impacts of Material Properties on Oscillatory Neuron Behavior

In this study, neuromorphic computing, which mimics the functions of biological brains, offers improvements in both latency and energy efficiency over typical von Neumann computing architectures. Spiking neural networks can be especially power-efficient because they encode information temporally and can use more sparse electrical inputs. Here, we study the design of volatile memristors (variable resistors with memory) for neuronal devices, with particular consideration toward the feasibility of all-on-chip oscillation using built-in capacitance. We use circuit simulations to model the behavior of oscillator neurons with a range of realistic material properties. We find that energy inputs increase with insulating-phase resistivity, thermal conductivity, and device aspect ratio. However, we also find that the minimum capacitance needed for oscillation decreases with increasing insulating-phase resistivity, which opposes the constraints for power efficiency. Based on published data on NbO 2 , VO 2 , and EuNiO 3 , we find that existing materials can be engineered for all-on-chip spiking using their parasitic capacitance.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Communication—Electrodeposition of Indium Directly on Silicon

Direct electrodeposition of indium onto silicon paves the way for advances in microelectronics, photovoltaics, and optoelectronics. Indium is generally electrodeposited onto silicon utilizing a physically or thermally deposited metallic seed layer. Eliminating this layer poses benefits in microelectronics by reducing resistive interfaces and in vapor-liquid-solid conversion to III-V material by allowing direct contact to the single-crystal silicon substrate for epitaxial conversion. We investigated conditions to directly electrodeposit indium onto n-type Si(100). We illustrate that a two-step galvanostatic plating at low temperatures can consistently produce smooth, continuous films of indium over large areas, in bump morphologies, and conformally into inverted pyramids.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Templated Vapor-Liquid-Solid Epitaxy of III-V Semiconductors on Silicon

Epitaxial growth on silicon remains the most promising method to reduce the cost of optoelectronic-quality III-V semiconductors. Several approaches exist to epitaxially grow III-V material from the vapor phase, but control of 3-D structures remains difficult with these methods. In this work, we present a novel epitaxial growth technique in which photolithography and wet etching are used to establish the geometry of group-III metal, which is then converted to III-V semiconductor by annealing with exposure group-V precursor. The resulting material has been shown to align to the substrate lattice and is optically active, making it a promising approach for III-V PV technologies.

government↗
DOE OSTI2020

Application of templated vapor-liquid-solid growth to heteroepitaxy of InP on Si

Direct growth of III–V semiconductors on Si promises to combine the superior optoelectronic properties of III–Vs with the existing large-scale fabrication capabilities for Si. Vapor-liquid-solid-based growth techniques have previously been used to grow optoelectronic-quality III–Vs in polycrystalline films and various photolithography-defined features. We show that templated vapor-liquid-solid growth can produce epitaxial material when performed on crystalline substrates. In templated vapor-liquid-solid growth, the metal group-III precursor is evaporated along with a capping SiO 2 layer on the crystalline substrate, then melted and converted with exposure to a vapor-phase group-V precursor. We demonstrate homoepitaxial growth of InP on InP wafers using two forms of the SiO x capping layer to confine the liquid metal: evaporated SiO 2 and solgel SiO x , the latter of which is necessary for growth on Si. We then demonstrate heteroepitaxial growth of InP islands on Si substrates from both evaporated and electroplated In metals. The templated vapor-liquid-solid process provides better material utilization and growth rates than common vapor-phase techniques, with similar control and convenience, providing a path toward the large-scale fabrication of integrated optoelectronic components.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗