Engineering topics

Schuelke, Thomas

Publications and source records attributed to Schuelke, Thomas.

5 records

DOE OSTI2022

Single-beam plasma source deposition of carbon thin films

A single-beam plasma source was developed and used to deposit hydrogenated amorphous carbon (a-C:H) thin films at room temperature. The plasma source was excited by a combined radio frequency and direct current power, which resulted in tunable ion energy over a wide range. The plasma source could effectively dissociate the source hydrocarbon gas and simultaneously emit an ion beam to interact with the deposited film. Using this plasma source and a mixture of argon and C 2 H 2 gas, a-C:H films were deposited at a rate of ~26 nm/min. The resulting a-C:H film of 1.2 µm thick was still highly transparent with a transmittance of over 90% in the infrared range and an optical bandgap of 2.04 eV. Young’s modulus of the a-C:H film was ~80 GPa. The combination of the low-temperature high-rate deposition of transparent a-C:H films with moderately high Young’s modulus makes the single-beam plasma source attractive for many coatings applications, especially in which heat-sensitive and soft materials are involved. Here, the single-beam plasma source can be configured into a linear structure, which could be used for large-area coatings.

14 SOLAR ENERGY↗

DOE OSTI2022

Single-beam ion source enhanced growth of transparent conductive thin films

A single-beam ion source was developed and used in combination with magnetron sputtering to modulate the film microstructure. The ion source emits a single beam of ions that interact with the deposited film and simultaneously enhances the magnetron discharge. The magnetron voltage can be adjusted over a wide range, from approximately 240 to 130 V, as the voltage of the ion source varies from 0 to 150 V, while the magnetron current increases accordingly. The low-voltage high-current magnetron discharge enables a 'soft sputtering mode', which is beneficial for thin-film growth. Indium tin oxide (ITO) thin films were deposited at room temperature using a combined single-beam ion source and magnetron sputtering. Furthermore, the ion beam resulted in the formation of polycrystalline ITO thin films with significantly reduced resistivity and surface roughness. Single-beam ion-source-enhanced magnetron sputtering has many potential applications in which low-temperature growth of thin films is required, such as coatings for organic solar cells.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Boride-Carbon Hybrid Technology for Ultra-Wear and Corrosive Conditions

This work discusses a study on a surface treatment for creating extremely durable low-friction, wear and corrosion-resistant surfaces for tribological components in harsh conditions. A duplex surface treatment was developed that combines the advantages of ultra-fast electrochemical boriding with those of hard tetrahedral amorphous carbon coatings. The friction and wear properties of the duplex treatment are compared to the boride-only treatment of AISI 1045 steel, while corrosion and contact fatigue behaviors of the duplex layer are compared to that of the single-layer carbon coating on low carbon steel. The duplex treatment yields wear rates as low as 6 × 10−8 mm3·N−1·m−1 and a coefficient of friction of 0.14 when tested against a steel counter face. The contact fatigue impact tests reveal that the high hardness of 1200 HV0.05 of the borided layer in the duplex treatment leads to higher resistance against indentation but is accompanied by a higher incidence of crack initiation, being in good agreement with the finite-element modeling of nanoindentation results. The duplex coatings exhibit resistance to pinhole corrosion as evidenced by a 3 h exposure to 15% HCl at room temperature.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Comparison of 1D and 2D particle-in-cell simulations for DC magnetron sputtering discharges

One-dimensional and two-dimensional particle-in-cell (PIC)/Monte Carlo collision simulations are performed for a balanced direct current magnetron sputtering (DCMS) discharge. The plasma parameters obtained by both simulations above the target racetrack share similar features and magnitudes under similar discharge intensities, i.e., similar local discharge current densities. The commonly observed high-energy tail of electron energy distribution in DCMS discharges is reproduced in both simulations. Additionally, the accuracy and applicability of using onedimensional simulations to qualitatively investigate the characteristics of balanced DCMS discharge are confirmed. In terms of capturing the key physical mechanisms in DCMS, one-dimensional PIC simulation is an efficient method, which could largely alleviate the computational expense and preserve the physical fidelity of modeling results.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2020

Optical measure of disorder: Why Urbach analysis works for amorphous silicon but fails for amorphous carbon

We investigate the basis for the Paradox where the Urbach-slope disorder parameter disagrees with the Raman width in amorphous diamond-like carbon (DLC) materials (lower Urbach-Eo yet greater Raman width). We examined the bandgap and Urbach-slope measurement issues. While significant errors are identified, ultimately these cannot resolve the Paradox. This resolution involves large changes in shape of DLC's absorption band resulting from large energy shifts. To solidify the understanding of band energy shifts, we examined their properties using a-Si:H, well known for its agreement between Raman and Urbach-slope disorder parameters. Using Tauc-Lorentz (T-L) dispersion functions, the Urbach method works for a-Si:H because small changes in shape occur, as measured by (i) peak position, (ii) peak width, (iii) peak amplitude, and (iv) and gap energies. Moreover, for a-Si:H, a 5th condition (v) there is no other feature below the principal band to interfere with its fall. All 5 of these conditions fail for DLCs. Because T-L dispersions accommodate asymmetry, we traced the Paradox to a steepening of the band shape as it pushes toward lower energy. This steepening is unrelated to disorder, but to a boundary value problem where energy cannot be negative. We conclude that Urbach analysis is invalid for DLC materials, but the T-L width is a good measure instead. We also examined another disorder measure, where π bonds should be considered as disorder relative to the σ bonds in an idealized “amorphous diamond” sp 3 network: superconvergence can be used to quantify these π transitions. Finally, further molecular orbital calculations are needed to properly interpret the changes in T-L widths.

36 MATERIALS SCIENCE↗