Engineering topics

Schumann, Timo

Publications and source records attributed to Schumann, Timo.

4 records

DOE OSTI2021

Detecting topological phase transitions in cadmium arsenide films via the transverse magnetoresistance

Topological protection against localization causes electrical transport phenomena in disordered topological materials to differ from those in topologically trivial systems. For example, a transition between a regime of weak localization to one of weak antilocalization can occur in systems such as topological insulators and topological semimetals when an external potential is applied across the system. Here, we report on the transverse magnetoresistance of thin films of cadmium arsenide, a topological non-trivial material, as we tune the electronic states and the Fermi level. We show that the appearance of weak localization and weak antilocalization sensitively reflects the relative contributions of multiple transport channels involving both gapless (massless) and gapped (massive) Dirac fermion states present in these films. Furthermore, the data is consistent with expectations of the different topological states of these films. Weak (anti-) localization phenomena can therefore serve as a probe of the types of Dirac fermions present in topological semimetals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2021

Superconductivity in magnetically doped SrTiO 3

Doped SrTiO 3 is a superconductor whose pairing mechanism is still not fully understood. The response of a superconductor to impurities has long been used to obtain insights into the nature of the superconducting state. In this work, we investigate the superconductivity of SrTiO 3 films that are doped or alloyed with different rare earth ions, which carry a magnetic moment.. It is shown that large concentrations (up to a few percent) of rare earth ions with unpaired f-electrons, such as Sm and Eu, do not reduce the superconducting critical temperature and critical fields. The finding is independent of whether the rare earth ion acts as a dopant or is an isovalent impurity. The interactions between the superconducting condensate and the magnetic dopants that could result in the observed insensitivity to magnetic impurities are discussed.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Magnetoresistance effects in cadmium arsenide thin films

In-plane magnetoresistance effects in the three-dimensional Dirac semimetal cadmium arsenide are studied as a function of film growth orientation, film thickness and surface Fermi level. For films with the Fermi level near the bulk nodes, which are gapped for very thin films, a pronounced planar Hall effect is observed due to the combination of magnetoresistance effects from the Berry phase and orbital magnetoresistance. At high Fermi levels, surface state transport produces weaker magnetoresistance effects. Furthermore, the results are discussed in the context of detecting signatures of the chiral anomaly.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Topological surface states in strained Dirac semimetal thin films

We computationally study the Fermi arc states in a Dirac semimetal, both in a semi-infinite slab and in the thin-film limit. We use Cd 3 As 2 as a model system, and include perturbations that break the C-4 symmetry and inversion symmetry while mirror symmetries remain. The surface states are protected by the mirror symmetries present in the bulk states and thus survive these perturbations. Additionally, the Fermi arc states persist down to very thin films, thinner than presently measured experimentally, but are affected by breaking the symmetry of the Hamiltonian. Recent experimental observations of transport in Cd 3 As 2 films strongly suggest transport by surface states. Our findings are consistent with those observations in that we show that Fermi arc states can survive to rather thin films, and our results also suggest that symmetry-breaking terms that preserve the Fermi arc states nevertheless can have a profound effect in the thin film limit.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗