Criticality of Low-Energy Protons in Single-Event Effects Testing of Highly-Scaled Technologies
No abstract available
ionizing radiation↗
Engineering topics
Schwank, J. R.
Publications and source records attributed to Schwank, J. R..
Advanced CMOS Radiation Effects Testing and Analysis
Presentation at the annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology Workshop (ETW). The material includes an update of progress in this NEPP task area over the past year, which includes testing, evaluation, and analysis of radiation effects data on the IBM 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) process. The testing was conducted using test vehicles supplied by directly by IBM.
cmos↗
Criticality of Low-Energy Protons in Single-Event Effects Testing of Highly-Scaled Technologies
We report low-energy proton and alpha particle SEE data on a 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) that demonstrates the criticality of understanding and using low-energy protons for SEE testing of highly-scaled technologies
single-event effects↗
Heavy Ion Testing at the Galactic Cosmic Ray Energy Peak
A 1 GeV/u Fe-56 Ion beam allows for true 90 deg. tilt irradiations of various microelectronic components and reveals relevant upset trends for an abundant element at the galactic cosmic ray (GCR) flux-energy peak.
Pellish, Jonathan A.↗
Simulation of SEU Cross-sections using MRED under Conditions of Limited Device Information
This viewgraph presentation reviews the simulation of Single Event Upset (SEU) cross sections using the membrane electrode assembly (MEA) resistance and electrode diffusion (MRED) tool using "Best guess" assumptions about the process and geometry, and direct ionization, low-energy beam test results. This work will also simulate SEU cross-sections including angular and high energy responses and compare the simulated results with beam test data for the validation of the model. Using MRED, we produced a reasonably accurate upset response model of a low-critical charge SRAM without detailed information about the circuit, device geometry, or fabrication process
Lauenstein, J. M.↗