Engineering topics

Schweizer, M.

Publications and source records attributed to Schweizer, M..

23 records · Page 2

NASA NTRS2001

Defect Density Comparison of Detached versus Attached Bridgman Grown Germanium Crystals

Semiconductor Bridgman growth without contact between the growing crystal and the growth ampoule has been observed on Earth in the last few years during several experiments. Previously, this so-called detached or dewetted growth phenomenon occurred preferentially under microgravity conditions due to the absence of the hydrostatic pressure. Many theoretical as well as experimental investigations helped to provide a better understanding of the mechanism and to identify the parameters leading to the detachment. Thus, recent attempts to get stable detached growth under terrestrial conditions by Duffar et al. growing III-V compounds and our own group with germanium and germanium-silicon alloys were frequently successful. At this conference we present the results of several germanium growth experiments performed in pyrolytic boron nitride containers. To exert an influence on the pressure ratio above and below the melt we used closed-bottom and open-bottom containers. This resulted in mainly detached-grown single crystals with the closed-bottom crucibles and attached single crystals with the open-bottom tubes. Evidence of detached growth is obtained from the crystal surface with a combination of axial profilometer scans and optical and electron microscopy. Detailed investigations of the defect structure, which is the main focus of this presentation, have shown an improvement of the crystal quality in the detached-grown samples, with a strong reduction of the etch pit density by about two orders of magnitude.

Schweizer, M.↗

NASA NTRS2000

Detached and Floating-Zone Growth of Semiconductor Crystals on the ISS

Understanding the mechanism of detached Bridgman growth and establishing the growth of large scale germanium-silicon crystals by the float-zone technique are the key points of the project "RDGS - Reduction of Defects in Germanium-Silicon". The contact angle of the melt and the growth angle of the crystal are essential parameters which allow a controlled use of detached growth. The contact angle was determined for a variety of different substrates and melt compositions; pBN showed the highest value for pure germanium as well as for germanium-rich GeSi melts. The growth angle of Ge(sub 0.95) Si(sub 0.05) was measured to be 8.5-10.5 degrees which concurs with the values of pure germanium and silicon, respectively. The temperature dependence and the concentration dependence of the surface tension were determined for concentrations up to 10at% silicon (partial derivative (gamma)/partial derivative T=-0.08 (raised dot) 10(exp -3)N/m (raised dot) K, partial derivative (gamma)/partial derivative (C)=2.2 (raised dot) 10(exp -3)N/m (raised dot) at%). Using these values, the critical Marangoni number indicating the transition to time-dependent thermocapillary flow will be exceeded for the growth of large scale float-zone crystals onboard the ISS. Therefore, suitable tools for flow control are required.

Dold, P.↗

NASA NTRS1999

Detached Growth of Germanium and Germaniumsilicon

Up to now, detached growth was observed mainly under microgravity, i.e. under the absence of hydrostatic pressure that hinders the formation of a free melt meniscus. the detached growth of germanium doped with gallium was obtained under 1 g conditions, the growth was performed in quartz-glass ampoule. Part of the crystal grew without wall contact, the detached growth was observed in-situ with a CCD-camera as well as after the growth process in form of growth lines and the formation of <111> facets on the crystal surface. GeSi crystal (oriientation: <111>, maximum silicon content: 4 at%, seed material: Ge) was grown in a pBN crucible (excluding the possibility of in-situ monitoring of the growth process). The grown crystal exhibits three growth facets, indicating also wall free growth. Surface analysis of the crystals (NDIC, SEM) and characterization of crystal segregation (EDAX, resistivity measurement) and defect structure (EPD, x-ray diffraction measurements) will be presented.

Dold, P.↗

NASA NTRS1998

The Role of Marangoni Convection for the FZ-Growth of Silicon

Fluctuations of the electrical resistivity due to inhomogeneous dopant distribution are still a serious problem for the industrial processing yield of doped silicon crystals. In the case of silicon floating-zone growth, the main sources of these inhomogeneities are time- dependent flows in the liquid phase during the growth process. Excluding radio frequency (RF) induced convection, buoyancy and thermocapillary (Marangoni) convection are the two natural reasons for fluid flow. Both originate from temperature/concentration gradients in the melt, buoyancy convection through thermal/concentrational volume expansion, and thermocapillary convection through the temperature/concentration dependence of the surface tension. To improve the properties of grown crystals, knowledge of the strength, the characteristic, and the relation of these two flow mechanisms is essential. By the use of microgravity, the effect and the strength of buoyancy (gravity dependent) and thermocapillary (gravity independent) convection can be separated and clarified. Applying magnetic fields, both convective modes can be influenced: fluid flow can either be damped (static magnetic fields) or overlaid by a regular flow regime (rotating magnetic fields). Two complementary approaches have been pursued: Silicon full zones (experiments on the German sounding rockets TEXUS 7, 12, 22, 29, and 36) with the maximum temperature at half of the zone height and silicon half zones (experiments on the Japanese sounding rockets TR-IA4 and 6) with the maximum temperature at the top of the melt. With the full zone arrangement, the intensity and the frequency of the dopant striations could be determined and the critical Marangoni number could be identified. The half zone configuration is suited to classify the flow pattern and to measure the amplitude and the frequency of temperature fluctuations in the melt by inserting thermocouples or temperature sensors into the melt. All experiments have been carried out in monoellipsoid mirror furnaces. Typical zone geometries are approx. 8 to 14 mm in diameter and height. The crystals grown under microgravity are compared to crystals grown in static axial magnetic fields (B<5 tesla) and in transversal rotating magnetic fields (B<7.5 mT / f=50 Hz). Experimental results are completed by 3D numerical simulations: the obtained temperature and concentration distribution in the melt confirm the damping effect of rotating magnetic fields and explain the change in the radial segregation under static magnetic fields.

Dold, P.↗

NASA NTRS1998

The Role of Marangoni Convection for the FZ-Growth of Silicon

In growing crystals by the floating zone (FZ) technique under microgravity, the size restriction we have under earth conditions because of the hydrostatic pressure are avoided. Further, buoyancy related convection is eliminated to a high degree. But in the case of silicon, the gravity independent thermocapillary (Marangoni) convection is time-dependent even for small zone geometries. This has been demonstrated in several Technische Experimente unter Schwerelosigkeit (TEXUS) - technical experiments under reduced gravity) flights. Thus, to really take advantage of microgravity with respect to improve crystal quality, tools are required to control Marangoni convection in space facilities. Applying magnetic fields, convection can be influenced; fluid flow can either be damped (static magnetic fields) or overlaid by a regular flow regime (rotating magnetic fields). In floating zones of 8-10mm diameter and height (Ma approximately equals 6 x 10(exp 3)), a static magnetic field of about 2OOmT is sufficient to suppress time-dependent Marangoni convection to a high degree, but in dependence on the kind and the concentration of the added dopant, a new type of strongly pronounced dopant inhomogeneities have been detected. They are originated by thermoelectromagnetic convection. This can be avoided as well as detrimental effects on the radial dopant distribution by using rotating magnetic fields instead of static ones. Applying 75mT/50Hz to the FZ, the intensity of the dopant fluctuations is reduced to a high degree. Considering the rather low power consumption of rotating magnetic fields, this will be a useful tool for control or elimination of time-dependent Marangoni convection under microgravity. The strong time dependent character of thermocapillary flow and its influence on the temperature field has been measured in silicon half-zones for Marangoni numbers of Ma is approximately equal to 1-1.5 x 10(exp 4): temperature fluctuations up to 4C have been determined. Their frequency range was 0.1 and 0.4 Hz. Between certain thermocouple or sensor pairs, strong correlation has been detected.

Dold, P.↗