Engineering topics

Scripa, R. N.

Publications and source records attributed to Scripa, R. N..

At least 19 records

NASA NTRS2004

Transient Torque Method: A Fast and Nonintrusive Technique to Simultaneously Determine Viscosity and Electrical Conductivity of Semiconducting and Metallic Melts

A transient torque method was developed to rapidly and simultaneously determine the viscosity and electrical conductivity of liquid metals and molten semiconductors. The experimental setup of the transient torque method is similar to that of the oscillation cup method. The melt sample is sealed inside a fused silica ampoule, and the ampoule is suspended by a long quartz fiber to form a torsional oscillation system. A rotating magnetic field is used to induce a rotating flow in the conductive melt, which causes the ampoule to rotate around its vertical axis. A sensitive angular detector is used to measure the deflection angle of the ampoule. Based on the transient behavior of the deflection angle as the rotating magnetic field is applied, the electrical conductivity and viscosity of the melt can be obtained simultaneously by numerically fitting the data to a set of governing equations. The transient torque viscometer was applied successfully to measure the viscosity and electrical conductivity of high purity mercury at 53.4 C. The results were in excellent agreement with published data. The method is nonintrusive; capable of rapid measurement of the viscosity of toxic, high vapor pressure melts at elevated temperatures. In addition, the transient torque viscometer can also be operated as an oscillation cup viscometer to measure just the viscosity of the melt or as a rotating magnetic field method to determine the electrical conductivity of a melt or a solid if desired.

Li, C.↗

NASA NTRS2004

Temperature Dependence of Density, Viscosity and Electrical Conductivity for Hg-Based II-VI Semiconductor Melts

The relaxation phenomenon of semiconductor melts, or the change of melt structure with time, impacts the crystal growth process and the eventual quality of the crystal. The thermophysical properties of the melt are good indicators of such changes in melt structure. Also, thermophysical properties are essential to the accurate predication of the crystal growth process by computational modeling. Currently, the temperature dependent thermophysical property data for the Hg-based II-VI semiconductor melts are scarce. This paper reports the results on the temperature dependence of melt density, viscosity and electrical conductivity of Hg-based II-VI compounds. The melt density was measured using a pycnometric method, and the viscosity and electrical conductivity were measured by a transient torque method. Results were compared with available published data and showed good agreement. The implication of the structural changes at different temperature ranges was also studied and discussed.

Li, C.↗

NASA NTRS2004

Density, Electrical Conductivity and Viscosity of Hg(sub 0.8)Cd(sub 0.2)Te Melt

The density, viscosity, and electrical conductivity of Hg(sub 0.8)Cd(sub 0.2)Te melt were measures as a function of temperature. A pycnometric method was used to measure the melt density in the temperature range of 1072 to 1122 K. The viscosity and electrical conductivity were determined using a transient torque method from 1068 to 1132 K. The density result from this study is within 0.3% of the published data. However, the current viscosity result is approximately 30% lower than the existing data. The electrical conductivity of Hg(sub 0.8)Cd(sub 0.2)Te melt as a function of temperature, which is not available in the literature, is also determined. The analysis of the temperature dependent electrical conductivity and the relationship between the kinematic viscosity and density indicated that the structure of the melt appeared to be homogeneous when the temperature was above 1090 K. A structural transition occurred in the Hg(sub 0.8)Cd(sub 0.2)Te melt as the temperature was decreased to below 1090 K.

Li, C.↗

NASA NTRS2004

Density, Electrical Conductivity and Viscosity of Hg(0.8)Cd(0.2)Te Melt

The density, viscosity, and electrical conductivity of Hg(0.8)Cd(0.2)Te melt were measured as a function of temperature. A pycnometric method was used to measure the melt density in the temperature range of 1072 to 1122 K. The viscosity and electrical conductivity were determined using a transient torque method from 1068 to 1132 K. The density result from this study is within 0.3% of the published data. However, the current viscosity result is approximately 30% lower than the existing data. The electrical conductivity of Hg(0.8)Cd(0.2)Te melt as a function of temperature, which is not available in the literature, is also determined. The analysis of the temperature dependent electrical conductivity and the relationship between the kinematic viscosity and density indicated that the structure of the melt appeared to be homogeneous when the temperature was above 1090 K. A structural transition occurred in the Hg(0.8)Cd(0.2)Te melt as the temperature was decreased to below 1090 K

Li, C.↗

NASA NTRS2004

Thermophysical Properties and Structural Transition of Hg(0.8)Cd(0.2)Te Melt

Thermophysical properties, namely, density, viscosity, and electrical conductivity of Hg(sub o.8)Cd(sub 0.2)Te melt were measured as a function of temperature. A pycnometric method was used to measure the melt density in the temperature range of 1072 to 1122 K. The viscosity and electrical conductivity were simultaneously determined using a transient torque method from 1068 to 1132 K. The density result from this study is within 0.3% of the published data. However, the current viscosity result is approximately 30% lower than the existing data. The electrical conductivity of Hg(sub o.8)Cd(sub 0.2)Te melt as a function of temperature, which is not available in the literature, is also determined. The analysis of the temperature dependent electrical conductivity and the relationship between the kinematic viscosity and density indicated that the structure of the melt appeared to be homogeneous when the temperature was above 1090 K. A structural transition occurred in the Hg(sub 0.8)Cd(0.2)Te melt as the temperature was decreased from 1090 K to the liquidus temperature.

Li, C.↗

NASA NTRS2004

Thermal Diffusivity for III-VI Semiconductor Melts at Different Temperatures

The change of the thermal properties of semiconductor melts reflects the structural changes inside the melts, and a fundamental understanding of this structural transformation is essential for high quality semiconductor crystal growth process. This paper focused on the technical development and the measurement of thermal properties of III-VI semiconductor melts at high temperatures. Our previous work has improved the laser flash method for the specialized quartz sample cell. In this paper, we reported the results of our recent progress in further improvements of the measurement system by minimizing the free convection of the melt, adding a front IR detector, and placing the sample cell in a vacuum environment. The results for tellurium and selenium based compounds, some of which have never been reported in the literature, were obtained at different temperatures as a function of time. The data were compared with other measured thermophysical properties to shed light on the structural transformations of the melt.

Ban, H.↗

NASA NTRS2004

Thermophysical Properties of Selected II-VI Semiconducting Melts

Thermophysical properties are essential for the accurate predication of the crystal growth process by computational modeling. Currently, the temperature dependent thermophysical property data for the II-VI semiconductor melts are scarce. This paper reports the results of the temperature dependence of melt density, viscosity and electrical conductivity of selected II-VI compounds, including HgTe, HgCdTe and HgZnTe. The melt density was measured using a pycnometric method, and the viscosity and electrical conductivity were measured by a transient torque method. The results were compared with and showed good agreement with the existing data in the literature.

Li, C.↗

NASA NTRS2004

Thermophysical Properties of Liquid Te: Density, Electrical Conductivity, and Viscosity

The thermophysical properties of liquid Te, namely, density, electrical conductivity, and viscosity, were determined using the pycnometric and transient torque methods from the melting point of Te (723 K) to approximately 1150 K. A maximum was observed in the density of liquid Te as the temperature was increased. The electrical conductivity of liquid Te increased to a constant value of 2.89 x 10(exp 5 OMEGA-1m-1) as the temperature was raised above 1000 K. The viscosity decreased rapidly upon heating the liquid to elevated temperatures. The anomalous behaviors of the measured properties are explained as caused by the structural transitions in the liquid and discussed in terms of Eyring's and Bachiskii's predicted behaviors for homogeneous liquids. The Properties were also measured as a function of time after the liquid was coded from approximately 1173 or 1123 to 823 K. No relaxation phenomena were observed in the properties after the temperature of liquid Te was decreased to 823 K, in contrast to the relaxation behavior observed for some of the Te compounds.

Li, C.↗

NASA NTRS2004

Electrical Conductivity of HgTe at High Temperatures

The electrical conductivity of HgTe was measured using a rotating magnetic field method from 300 K to the melting point (943 K). A microscopic theory for electrical conduction was used to calculate the expected temperature dependence of the HgTe conductivity. A comparison between the measured and calculated conductivities was used to obtain the estimates of the temperature dependence of Gamma(sub 6)-Gamma(sub 8) energy gap from 300 K to 943 K. The estimated temperature coefficient for the energy gap was comparable to the previous results at lower temperatures (less than or equal to 300 K). A rapid increase in the conductivity just above 300 K and a subsequent decrease at 500 K is attributed to band crossover effects. This paper describes the experimental approach and some of the theoretical calculation details.

Li, C.↗

NASA NTRS2003

Transient Torque Method: A Fast and Non-Intrusive Technique to Simultaneously Determine Viscosity and Electrical Conductivity of Semiconducting and Metallic Melts

A transient torque method was developed to rapidly and simultaneously determine the viscosity and electrical conductivity of semiconducting or metallic melts. The experimental setup is similar to that for the oscillation cup technique. The melt sample is sealed inside a fused silica ampoule, and the ampoule is suspended by a long quartz fiber to form a torsional oscillation system. A rotating magnetic field is used to induce a rotating flow in the conductive melt, which causes the ampoule to rotate along its axis. A sensitive angular detector is used to measure the deflection angle of the ampoule. Based on the transient behavior of the deflection angle as the rotating magnetic field is applied, the electrical conductivity and viscosity of the melt can be obtained simultaneously by numerically fitting the data to a set of governing equations. The transient torque viscometer was applied successfully to measure the viscosity and electrical conductivity of high purity mercury at 53.4 C. The results were in excellent agreement with the published data. The main advantage of the technique is that the measurement can be completed in one or two minutes, as opposed to the one or two-hour measurement time required by the oscillation cup technique. The method is non-intrusive; capable of rapid measurement of the viscosity of toxic, high vapor pressure melts at elevated temperatures. In addition, the transient torque viscometer can also be operated as an oscillation cup viscometer if desired.

Li, C.↗

NASA NTRS2003

Analysis of Radial Segregation in Directionally Solidified Hg(0.89)Mn(0.11)Te

Bridgman growth experiments were performed on Hg(0.89)Mn(0.11)Te (MMT) to determine the extent of radial Manganese segregation during directional solidification. MMT crystals were directionally solidified at rates of 0.09 and 0.18 p d s and in axial thermal gradients of 83 and 68"C/cm. Wavelength Dispersive Spectroscopy (WDS) and Fourier Transform Infra-Red (FTIR) analytical techniques were used to determine the radial homogeneity in all boules and the deflection of the solid-liquid interface (SLI) in two boules that were rapidly quenched after 5 to 6 cm of directional solidification. For all growth runs, the measured radial coinpositional variations were on the order of 0.01 molar percent MnTe in the steady state region of growth. Comparison of the measured radial compositional results of the crystals to predicted values in the diffusion-limited regime indicate a strong influence of convection near the solid-liquid interface. This conclusion is supported by the weak influence of the translation rates and axial thermal gradients utilized in this study upon radial compositional homogeneity.

Price, M. W.↗

NASA NTRS2002

Transient Torque Technique for Viscosity and Electrical Conductivity Determination of Semiconducting Liquids

A novel apparatus based on transient torque technique is constructed in MSFC/NASA. The apparatus uses a 125um diameter quartz fiber as torsion wire. A high sensitive angular detector is implemented to measure the deflection angle of the crucible containing the liquid. A rotating magnetic field (RMF) is used to induce a rotating flow of a conducting or semiconducting melts. By measuring the magnitude and transient behavior of the induced deflection angle, the electrical conductivity and viscosity of the melt can be measured simultaneously. High purity elements namely Hg, Ga, Zn and Te are tested at room temperature and high temperature up to 900 C.

Li, C.↗

NASA NTRS2002

Characterizing Thermal Properties of Melting Te Semiconductor: Thermal Diffusivity Measurements and Simulation

Tellurium is an element for many II-VI and I-III-VI(sub 2) compounds that are useful materials for fabricating many devices. In the melt growth techniques, the thermal properties of the molten phase are important parameter for controlling growth process to improve semiconducting crystal quality. In this study, thermal diffusivity of molten tellurium has been measured by a laser flash method in the temperature range from 500 C to 900 C. A pulsed laser with 1064 nm wavelength is focused on one side of the measured sample. The thermal diffusivity can be estimated from the temperature transient at the other side of the sample. A numerical simulation based on the thermal transport process has been also performed. By numerically fitting the experimental results, both the thermal conductivity and heat capacity can be derived. A relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the sample, was observed for the first time. The error analysis and the comparison of the results to published data measured by other techniques will be discussed.

Zhu, Shen↗

NASA NTRS2002

Technique for Determining the Viscosity and Electrical Conductivity of Semiconducting Liquids

A novel apparatus for determining the viscosity and electrical conductivity of semiconducting liquids has been developed at NASA/MSFC. The apparatus is based on the transient torque technique and utilizes a 125 micrometer diameter quartz fiber as a torsion wire and a sensitive angular detector to measure the deflection angle of the crucible containing the liquid. A rotating flow is induced in the semiconducting melt by the application of a rotating magnetic field and measurement of the magnitude and transient behavior of the induced deflection angle allows the simultaneous determination of the viscosity and electrical conductivity of the melt. Measurements at room temperature and up to 900 C were made on high purity melts.

Li, C.↗

NASA NTRS2002

Effect of Residual Accelerations on the Crystal Growth of II-VI Semiconductors in Low Earth Orbit

The paper compares and summarizes the effects of residual acceleration during crystal growth on the compositional variation of two II-VI solid solution binary alloys (Hg(0.8)Cd(0.2)Te and Hg(0.84)Zn(0.16)Te). The crystals were grown by directional solidification on the second United States Microgravity Payload (USMP-2) and the first United States Microgravity Laboratory (USML-1) missions, respectively. For both alloys, changes in the direction and magnitude of the quasisteady acceleration vector (approximately 0.4- 1 mu g) caused large changes in the radial compositional distribution that demonstrates the importance of residual accelerations, even in the submicrogravity range, for large density gradients in the melt and slow solidification rates. The observed compositional variations will be correlated to changes in the radial flow velocities ahead of the solidification interface.

Gillies, D. C.↗

NASA NTRS2002

Characterizing Thermal Properties of Melting Te Semiconductor: Thermal Diffusivity Measurements and Simulation

Tellurium is an element for many II-VI and I-III-VI(sub 2) compounds that are useful materials for fabricating many devises. In the melt growth techniques, the thermal properties of the molten phase are important parameter for controlling growth process to improve semiconducting crystal quality. In this study, thermal diffusivity of molten tellurium has been measured by a laser flash method in the temperature range from 500 C to 900 C. A pulsed laser with 1064 nm wavelength is focused on one side of the measured sample. The thermal diffusivity can be estimated from the temperature transient at the other side of the sample. A numerical simulation based on the thermal transport process has been also performed. By numerically fitting the experimental results, both the thermal conductivity and heat capacity can be derived. A relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the sample, was observed for the first time. The error analysis and the comparison of the results to published data measured by other techniques will be discussed in the presentation.

Zhu, Shen↗

NASA NTRS2002

Crystal Growth of HgZnTe Alloy by Directional Solidification in Low Gravity Environment

An Hg(0.84)Zn(0.16)Te alloy crystal was back-melted and partially re-solidified during the first United States Microgravity Laboratory mission in the Marshall Space Flight Center's Crystal Growth Furnace. The experiment was inadvertently terminated at about 30% of planned completion. Nonetheless, it was successfully demonstrated that a HgZnTe alloy ingot partially grown and quenched on the ground can be back-melted and re-grown in space under nearly steady-state growth conditions. An identical "ground-truth" experiment was performed following the mission and a comparison between the properties of the crystals is described. The results indicate the importance of residual microgravity acceleration (less than or approx. equal to 0.4 micro-grams) even in the sub-microgravity range for the slow solidification velocities and large density gradients.

Su, Ching-Hua↗

NASA NTRS1999

Determination of the Solid/Liquid Interface Shape and Resultant Radial Homogeneity in Directionally Solidified Hg(0.89)Mn(0.11)Te

Directional solidification and interrupted directional solidification experiments were used to determine tile shape of the solid/liquid interface and the resultant radial homogeneity in Hg(0.89)Mg(0.11)Te. For directionally solidified samples solidified at a rate of 0.09 microns/sec in a thermal gradient of 83 C/cm, a maximum of 0.006 molar percent MnTe radial variation across the Hg0.89)Mn(0.11)Te boules at specific locations was determined using an FTIR technique. This FTIR evaluation of the radial homogeneity also indicated an asymmetrical, convex interface shape during solidification. The asymmetrical, convex shape of the growth interface was confirmed by interrupted directional solidification experiments. These were performed under the same growth conditions as the normally completed directional solidification experiments except that the samples were quenched before the final growth transient was reached. In these experiments, etching and scanning X-ray fluorescence were used to reveal the shape of the solid/liquid interface. Microprobe analysis of composition gradients across the interface was used to confirm the authors' previous work in evaluating the segregation coefficient of Hg(0.89)Mn(0.11)Te alloy. Microprobe analysis of the interface region of the interrupted growth sample revealed a dendritic structure containing secondary and tertiary dendritic arms.

Price, M. W.↗