Catastrophic SEE on high-voltage power MOSFETs
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SEGR SEB power MOSFET SET↗
Engineering topics
Selva, L.
Publications and source records attributed to Selva, L..
Catastrophic Heavy-Ion Failure of a Commercial ASIC
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Heavy-Ion SEGR↗
Proton Degradation of Light-Emitting Diodes
The severe degradation of optocouplers in space has been shown to be mainly due to proton displacement damage in the light-emitting diodes that are used within the optocouplers.
photonics proton degradation light-emitting diodes↗
The role of Energy Deposition in the Epitaxial Layer in Triggering SEGR in Power MOSFETs
In these SEGR experiments, three identical-oxide MOSFET types were irradiated with six ions of significantly different ranges. Results show the prime importance of the total energy deposited in the epitaxial layer.
energy deposition epitaxial layer SEGR in Power MO↗
Ion Induced Electric Field Transients - The Single-Event Gate Rupture (SEGR)
Power MOSFET devices are susceptible to heavy-ion induced Single-Event Gate Rupture. Computer modeling show that intense electric field transients can trigger the SEGR phenomenon.
The Single-Event Gate Rupture (SEGR) Ion Induced E↗
Observations on the Presumed LET Dependence of SEGR
Single-event gate rupture (SEGR)in vertical power MOSFETs is induced by charge deposited in the epitaxial region (below the gate oxide) in concert with the weakening of the oxide, both are a result of the ion passage.
Single-event gate rupture SEGR vertical power MOSF↗