Engineering topics

Senesky, Debbie G.

Publications and source records attributed to Senesky, Debbie G..

5 records

DOE OSTI2024

Evidence for phonon hardening in laser-excited gold using x-ray diffraction at a hard x-ray free electron laser

Studies of laser-heated materials on femtosecond timescales have shown that the interatomic potential can be perturbed at sufficiently high laser intensities. For gold, it has been postulated to undergo a strong stiffening leading to an increase of the phonon energies, known as phonon hardening. Despite efforts to investigate this behavior, only measurements at low absorbed energy density have been performed, for which the interpretation of the experimental data remains ambiguous. By using in situ single-shot x-ray diffraction at a hard x-ray free-electron laser, the evolution of diffraction line intensities of laser-excited Au to a higher energy density provides evidence for phonon hardening.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Synthesis and characterization of UiO-66-NH 2 incorporated graphene aerogel composites and their utilization for absorption of organic liquids

This work details the synthesis, materials characterization and absorption capacity of graphene aerogel (GA) loaded with UiO-66-NH 2 metal organic framework (MOF). Throughout the study, a series of density-tunable MOF/GA composites were synthesized by adjusting the MOF/graphene oxide (GO) mass ratio of the precursors before hydrothermal reduction and subsequent critical point drying to achieve MOF-x%/GA composites, with x, ranging from 0 to 100, denoting the weight percent ratio of MOF to GO in the starting solution. Scanning electron microscopy (SEM) images and Barrett-Joyner-Halenda (BJH) pore size calculations supported that MOF loading enlarged the macroporous (>50 nm) structure of the GA framework but had no influence on the mesoporous (2–50 nm) structure of GA. The degree of MOF loading first decreased and then increased the density of resulting composites, exhibiting a minimum for the 10–30% samples. Such behavior with respect to MOF loading has not been reported previously. MOF-x%/GA samples were further investigated for absorption capacity using various organic liquids. MOF-30%/GA proved to be the best absorbent sample for all solvents tested, achieving the highest capacity for chloroform at 147.0 ± 10.0 mg/mg. The behavior is attributed to the structural changes induced by the MOF incorporation as well as the interactions between the organic molecules and the MOF.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Effect of proton irradiation temperature on persistent photoconductivity in zinc oxide metal-semiconductor-metal ultraviolet photodetectors

The electrical and structural characteristics of 50-nm-thick zinc oxide (ZnO) metal-semiconductor-metal ultraviolet (UV) photodetectors subjected to proton irradiation at different temperatures are reported and compared. The devices were irradiated with 200 keV protons to a fluence of 1016 cm−2. Examination of the x-ray diffraction (XRD) rocking curves indicates a preferred (100) orientation prior to irradiation, with decrease in crystal quality afterward. Additionally, peak shifts in XRD and Raman spectra of the control sample relative to well-known theoretical positions are indicative of tensile strain in the as-deposited ZnO films. Shifts toward theoretical unstrained positions are observed in the irradiated films, which indicates partial relaxation. Raman spectra also indicate increase in oxygen vacancies (VO) and zinc interstitial defects (Zni) compared to the control sample. Additionally, transient photocurrent measurements performed on each sample at different temperatures showed up to 2× increase in photocurrent decay time constants for irradiated samples vs the control. This persistent photoconductive behavior is linked to the activation of electron and hole traps near the surface, and to the desorption and reabsorption of O2 molecules on the ZnO surface under the influence of UV light. Using an Arrhenius model, trap activation energies were extracted and, by comparing with known energies from the literature, the dominant defects contributing to persistent photoconductivity for each irradiation condition were identified. The persistence of differences in photocurrent transients between different samples months after irradiation indicates that the defects introduced by the suppression of thermally activated dynamic annealing processes have a long-term deleterious effect on device performance.

Heuser, Thomas A. (ORCID:0000000225642400)↗

DOE OSTI2020

Low Offset and Noise in High Biased GaN 2DEG Hall-Effect Plates Investigated With Infrared Microscopy

This article presents GaN two-dimensional electron gas (2DEG) Hall plates with low residual offset and noise at 3 V input bias. We studied devices made from three consecutive fabrication generations through current spinning offset measurements in a zero-field chamber. When operated above 1 V, the first-generation devices charted high residual offsets >1 mT. We reduced these residual offsets by three orders of magnitude in later device generations. Two experiments were performed to confirm the improvements. First, the GaN 2DEG Hall-effect plates were measured with infrared microscopy during current spinning to investigate current crowding and Joule heating. The low offset devices had minimal thermal gradients while the high offset devices had large thermal variations during current spinning. Second, zero-field current spinning was used to compare GaN 2DEG Hall-effect plates against typical commercial silicon Hall-effect plates. The Si devices had residual offsets >10μT biased at 3 V and AlGaN/GaN devices had residual offset <4 μT at 3 V, and an InAlN/GaN devices operated at 2 V had a residual offset <4 μT . Thus, for the first time, GaN 2DEG Hall-effect plates were shown to operate with high bias with low offsets and noise, which enables high fidelity sensing applications in extreme environments.

2DEG↗

DOE OSTI2020

Monolithic mtesla-level magnetic induction by self-rolled-up membrane technology

Monolithic strong magnetic induction at the mtesla to tesla level provides essential functionalities to physical, chemical, and medical systems. Current design options are constrained by existing capabilities in three-dimensional (3D) structure construction, current handling, and magnetic material integration. We report here geometric transformation of large-area and relatively thick (~100 to 250 nm) 2D nanomembranes into multiturn 3D air-core microtubes by a vapor-phase self-rolled-up membrane (S-RuM) nanotechnology, combined with postrolling integration of ferrofluid magnetic materials by capillary force. Hundreds of S-RuM power inductors on sapphire are designed and tested, with maximum operating frequency exceeding 500 MHz. An inductance of 1.24 μH at 10 kHz has been achieved for a single microtube inductor, with corresponding areal and volumetric inductance densities of 3 μH/mm 2 and 23 μH/mm 3 , respectively. The simulated intensity of the magnetic induction reaches tens of mtesla in fabricated devices at 10 MHz.

42 ENGINEERING↗