Engineering topics
Publications and source records attributed to Sengupta, D. K..
A broad-band infrared detector, sensitive over a 10 - 16 mu m spectral range, based on GaAs/A1xGa1-xAs quantum wells grown by molecular beam epitaxy, has been demonstrated.
In this paper we discuss the optimization of the detector design, material growth and processing that has culminated in realization of 15 micron cutoff 128 x 128 QWIP focal plane array camera, hand-held and palmize 256 x 256 long-wavelength QWIP cameras and 648 x 480 long-wavelength cameras, holding forth great promise for myriad applications in 6-25 micron wavelength range in science, medicine, defense and industry.
We demonstrate that SiO(sub 2) cap annealing in the ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much a 292.5 meV at 900 degrees C have been measured and the value of the bandgap shift can be controlled by the anneal time.
One of the simplest device realizations of the classic particle-in-the-box problem of basic quantum mechanics is the Quantum Well Infrared Photodetector (QWIP). In this paper we discuss the optimization of the detector design, material growth and processing that has culminated in realization of 15 micron cutoff 128x128 QWIP focal plane array camera, hand-held and palmsize 256x256 long-wavelength QWIP cameras and 648x480 long-wavelength cameras, holding forth great promise for myriad applications in 6-25 micron wavelength range in science, medicine, defense and industry.
We have demonstrated red-shifting of the wavelength response of a bound-to-continuum p-type ultra-thin InGaAs/Inp quantum well infrared photodetector after growth via rapid thermal annealing. Compared to the as-grown detector, the peak spectral response of the annealed detector was shifted to longer wavelength without any major degradation in responsivity characteristics.
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It is customary to make infrared (IR) detectors in the long wavelength range by utilizing the interband transition which promotes an electron across the band gap (Eg) from the valence band to the conduction.