Search NASA⌕ Search

Engineering topics

Sereika, Raimundas

Publications and source records attributed to Sereika, Raimundas.

8 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Continuous pressure-induced valence and magnetic transitions in EuMnSb 2

EuMnSb 2 is a unique and promising compound with complex magnetism (Eu and Mn sublattices) to realize magnetic control of topological quasiparticles. By applying pressure (P) to this system, we have observed a continuous pressure-induced valence change from Eu 2+ to Eu 3+ . Remarkably, despite the significant valence change in Eu ions, an extremely large increase in the magnetic ordering temperature (T N,Eu ) from 21 K at ambient pressure to 180 K at 28.4 GPa is detected.The substantial enhancement in T N,Eu is likely the consequence of the reduced distance between neighboring Eu ions and the enhanced indirect exchange interaction through increased 4f -5d mixing under pressure. Furthermore, T N,Eu (P) shows a discontinuous change above 8 GPa, although the orthorhombic crystal structure remains stable. Our experimental data indicate the record high value in the magnetic hyperfine field of 151 Eu, reaching 74.1 T at 28.4 GPa and 26 K. In conclusion, these unusual electronic and magnetic transitions revealed by pressure highlight that EuMnSb 2 is a rich magnetic topological semimetal candidate for investigating a multitude of strong correlations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Magnetic ordering in terbium at high pressures and low temperatures

We have investigated magnetic ordering in the heavy lanthanide terbium (Tb) for pressures up to 70 GPa and temperatures down to 20 K by synchrotron x-ray diffraction at the Advanced Photon Source, Argonne National Laboratory. The x-ray diffraction studies were complemented by neutron diffraction studies at the Spallation Neutron Source, Oak Ridge National Laboratory. We focused on the higher-pressure phases of Tb, such as the double hexagonal close-packed (dhcp, above 16 GPa), distorted face-centered cubic (hR24, above 30 GPa), and orthorhombic (oF16, above 51 GPa) phases. We observed the phenomenon of spontaneous magnetostriction in the dhcp and hR24 phases, where magnetic ordering at low temperatures gives rise to subtle splitting in x-ray diffraction peaks. The neutron diffraction study of the dhcp phase at 20 GPa revealed magnetic peaks that can be assigned a propagation vector k = ($\frac{1}{2}$, 0, $\frac{1}{2}$), and a magnetic ordering temperature that is consistent with the magnetostriction effect observed with x-ray diffraction. The high-pressure and low-temperature x-ray diffraction study at 70 GPa in the collapsed oF16 phase did not show any evidence of magnetostriction, indicating a significant decrease in the magnetic moment of the 4f-shell due to band broadening at ultra-high compression.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Novel Valence Transition in Elemental Metal Europium around 80 GPa

We report valence transition could induce structural, insulator-metal, nonmagnetic-magnetic and superconducting transitions in rare-earth metals and compounds, while the underlying physics remains unclear due to the complex interaction of localized 4f electrons as well as their coupling with itinerant electrons. The valence transition in the elemental metal europium (Eu) still has remained as a matter of debate. Using resonant x-ray emission scattering and x-ray diffraction, we pressurize the states of 4f electrons in Eu and study its valence and structure transitions up to 160 GPa. We provide compelling evidence for a valence transition around 80 GPa, which coincides with a structural transition from a monoclinic (C2/c) to an orthorhombic phase ($Pnma$). We show that the valence transition occurs when the pressure-dependent energy gap between 4f and 5d electrons approaches the Coulomb interaction. Our discovery is critical for understanding the electrodynamics of Eu, including magnetism and high-pressure superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

A tunable band gap of the layered semiconductor Zn 3 In 2 S 6 under pressure

The band gap is an important property of a semiconductor, and a candidate material with a highly tunable band gap under external tuning parameters will offer wider applications in optoelectronic devices and photocatalytic fields. Here, we show that the layered semiconductor Zn 3 In 2 S 6 possesses a band gap that is highly tunable with pressure. In situ optical absorption shows that the band gap unexpectedly widens with pressure up to ~13 GPa. Sudden gap narrowing then occurs above 14 GPa, which is followed by progressive gap decreases on further compression and the gap finally closes above 20 GPa. Our study, encompassing X-ray diffraction, Raman spectroscopy experiments and theoretical calculations revealed that the selective responses of the different bonds are responsible for the band gap increase in the low-pressure ranges. We show that the pressure-induced irreversible amorphization is responsible for the sudden gap narrowing whereas the semiconductor–metallic transition is related to the amorphous–amorphous transition at high-pressure due to a change in the local coordination number of Zn atoms. This work demonstrates the high tunability of the electronic and optical properties of layered ternary semiconductors under pressure, providing a potential way for wider applications of this class of materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Structural, Vibrational, and Electronic Properties of 1D-TlInTe 2 under High Pressure: A Combined Experimental and Theoretical Study

Analogous to 2D layered transition-metal dichalcogenides, the TlSe family of quasi-one dimensional chain materials with the Zintl-type structure exhibits novel phenomena under high pressure. In the present work, we have systematically investigated the high-pressure behavior of TlInTe 2 using Raman spectroscopy, synchrotron X-ray diffraction (XRD), and transport measurements, in combination with first principles crystal structure prediction (CSP) based on evolutionary approach. We found that TlInTe2 undergoes a pressure-induced semiconductor-to-semimetal transition at 4 GPa, followed by a superconducting transition at 5.7 GPa (with T c = 3.8 K). An unusual giant phonon mode (A g ) softening appears at ~10–12 GPa as a result of the interaction of optical phonons with the conduction electrons. The high-pressure XRD and Raman spectroscopy studies reveal that there is no structural phase transitions observed up to the maximum pressure achieved (33.5 GPa), which is in agreement with our CSP calculations. In addition, our calculations predict two high-pressure phases above 35 GPa following the phase transition sequence as I4/mcm (B37) → Pbcm → Pm$\bar{3}$m (B2). Electronic structure calculations suggest Lifshitz (L1 & L2-type) transitions near the superconducting transition pressure. Furthermore, our findings on TlInTe 2 open up a new avenue to study unexplored high-pressure novel phenomena in TlSe family induced by Lifshitz transition (electronic driven), giant phonon softening, and electron–phonon coupling.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Aberrant electronic and structural alterations in pressure tuned perovskite NaOsO 3

The perovskite NaOsO 3 has a metal–insulator transition at temperature 410 K, which is delicate, intriguing, and provokes a lot of debate on its nature. Our combined electrical resistance, Raman, and synchrotron x-ray diffraction experiments show that the insulating ground state in this osmate endures under high pressure up to at least 35 GPa. In this pressure range, compression reveals hidden hysteretic resistance properties with a transient metallic state near 200 K, manifested three electronic character anomalies (at 1.7, 9.0, and 25.5 GPa), and a structural transition to the singular polar phase (at ~18 GPa). We distinguish NaOsO 3 from the regular crystallographic behavior of perovskites, though the electrical specificities resemble iridates and nickelates. The theoretical first-principle band structure and lattice dynamics calculations demonstrate that the magnetically itinerant Lifshitz-type mechanism with spin–orbit and spin–phonon interactions is responsible for these pressure-induced changes. Our findings provide another new playground for the emergence of new states in 5d materials by using high-pressure methods.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Anomalous behavior of the quasi-one-dimensional quantum material Na 2 OsO 4 at high pressure

Na 2 OsO 4 is an unusual quantum material that, in contrast to the common 5d 2 oxides with spins = 1, owns a magnetically silent ground state with spin = 0 and a band gap at Fermi level attributed to a distortion in the OsO 6 octahedral sites. In this semiconductor, our low-temperature electrical transport measurements indicate an anomaly at 6.3 K with a power-law behavior inclining through the semiconductor-to-metal transition observed at 23 GPa. Even more peculiarly, we discover that before this transition, the material becomes more insulating instead of merely turning into a metal according to the conventional wisdom. Furthermore, to investigate the underlying mechanisms, we applied experimental and theoretical methods to examine the electronic and crystal structures comprehensively, and conclude that the enhanced insulating state at high pressure originates from the enlarged distortion of the OsO 6 . It is such a distortion that widens the band gap and decreases the electron occupancy in Os’s t 2 g orbital through an interplay of the lattice, charge, and orbital in the material, which is responsible for the changes observed in our experiments.

36 MATERIALS SCIENCE↗