Synchrotron X-Ray Topography Characterization of Power Electronic GaN Materials
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Liu, Yafei↗
Engineering topics
Shahedipour-Sandvik, F. Shadi
Publications and source records attributed to Shahedipour-Sandvik, F. Shadi.
Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates
Abstract not provided
Liu, Yafei↗
X-ray topography characterization of gallium nitride substrates for power device development
Gallium nitride substrates grown by the hydride vapor phase epitaxy (HVPE) method using a patterned growth process have been characterized by synchrotron monochromatic beam X-ray topography in the grazing incidence geometry. Images reveal a starkly heterogeneous distribution of dislocations with areas as large as 0 3 mm 2 containing threading dislocation densities below 10 3 cm -2 in between a grid of strain centers with higher threading dislocation densities (> 10 4 cm -2 ). Basal plane dislocation densities in these areas are as low as 104 cm -2 . By comparing the recorded images of dislocations with ray tracing simulations of expected dislocations in GaN, the Burgers vectors of the dislocations have been determined. The distribution of threading screw/mixed dislocations (TSDs/TMDs), threading edge dislocations (TEDs) and basal plane dislocations (BPDs) is discussed with implications for fabrication of power devices.
36 MATERIALS SCIENCE↗
LONG LIFE HIGH BRIGHTNESS PHOTOCATHODES USING III-NITRIDE MATERIALS
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36 MATERIALS SCIENCE↗