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Shannon, Steven

Publications and source records attributed to Shannon, Steven.

Science challenges and research opportunities for plasma applications in microelectronics

Low-temperature plasmas (LTPs) are essential to manufacturing devices in the semiconductor industry, from creating extreme ultraviolet photons used in the most advanced lithography to thin film etching, deposition, and surface modifications. It is estimated that 40%–45% of all process steps needed to manufacture semiconductor devices use LTPs in one form or another. LTPs have been an enabling technology in the multidecade progression of the shrinking of device dimensions, often referred to as Moore’s law. New challenges in circuit and device design, novel materials, and increasing demands to achieve environmentally benign processing technologies require advances in plasma technology beyond the current state-of-the-art. The Department of Energy Office of Science Fusion Energy Sciences held a workshop titled Plasma Science for Microelectronics Nanofabrication in August 2022 to discuss the plasma science challenges and technical barriers that need to be overcome to continue to develop the innovative plasma technologies required to support and advance the semiconductor industry. One of the key outcomes of the workshop was identifying a set of priority research opportunities (PROs) to focus attention on the most strategic plasma science challenges to address to benefit the semiconductor industry. For each PRO, scientific challenges and recommended strategies to address those challenges were identified. Furthermore, this article summarizes the PROs identified by the workshop participants.

36 MATERIALS SCIENCE↗

Verification and validation of the open-source plasma fluid code: Zapdos

Zapdos is an open-source finite element plasma fluid solver based on the MOOSE multiphysics framework. This paper outlines Zapdos verification, benchmarking, and validation efforts for 1D and 2D RF capacitively coupled plasma discharge models for mid-range pressures (0.1 - 1 Torr). The verification process involved using the method of manufactured solutions to assess Zapdos spatial and temporal error convergence. L2 errors ranged from 10 -2 to 10 -4 , while the convergence’s slope were in agreement with the predicted slopes for the tested variable and time integration orders. The benchmarking process involved comparisons to previously results from the validated finite element code, LSODI. These works included 1D and 2D simulations for a range of plasma parameters (densities, temperatures, voltage, etc.). For the 1D cases, Zapdos and LSODI results were in very good agreement. In the 2D cases, variable behaviors matched, with slight discrepancies in peak values. The validation process involved comparisons to experimental works including electron density measurements by microwave interferometry and metastable density measurements by planar laser-induced fluorescence imaging. Results shown reasonable agreement at higher pressure, with results starting to diverge at low pressures. Furthermore, probable causes for this diverges are the limitation of the fluid assumption for plasmas at low pressure, or the need for more robust boundary conditions. Overall, Zapdos shown reasonable results for the verification, benchmarking, and validation efforts, and Zapdos can be downloaded at https://github.com/shannon-lab/zapdos.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Effect of dielectric target properties on plasma surface ionization wave propagation

Surface ionization waves (SIWs) propagating along dielectric covered, grounded surfaces have been studied for various dielectric bulk and surface conditions; a dependence on the propagation velocity with respect to dielectric electrical thickness and near surface permittivity profiles are observed. SIWs generated by an atmospheric pressure plasma source are imaged interacting with planar dielectric surface. Surface wave velocity is obtained by tracking emission intensity as a function of time. Target dielectric thickness is varied from $d = 0.15-10$ mm and dielectric constant is varied from $\epsilon_r = 6.21 - 9.4$. The propagation of SIWs can be generally predicted by relating their velocity to the RC time constant of the circuit generated between the plasma and the dielectric surface, but it is found that this approximation breaks down for dielectric substrates of sufficient thickness and wave velocity becomes constant. The results show that wave velocity is stable and predictable for target thicknesses beyond a certain point determined by the permittivity of the target material. It is also shown that SIW propagation is strongly driven by the dielectric material near to the surface of the target in addition to the bulk material. The possible mechanisms driving these thickness dependent behaviors is discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗