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Shao, Q.

Publications and source records attributed to Shao, Q..

Gallium Nitride Superjunction Fin Field Effect Transistor (Continued Funding Report)

The goal of this project is to develop the gallium vacancy assisted diffusion (GAID) method in GaN and apply it to demonstrate 2-terminal, 3-terminal, and large area Superjunction-enhanced modules. These devices will find use in high efficiency power conversion applications with the capability of operating at higher voltages, higher frequency, and less loss than comparable stat-of- the-art devices.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

α Irradiation Response on the Electronic Transport Properties of p -B 12 P 2

B 12 P 2 , a wide bandgap semiconductor, has been previously reported to self-heal from high-energy electron bombardment as determined from transmission electron microscopy. However, the effect of irradiation on the electronic transport properties of B 12 P 2 has not been studied. We report electrical transport measurements on B 12 P 2 after α irradiation. The temperature-dependent Hall effect was measured on p-type B 12 P 2 after successive α irradiation from 210 Po over a fluence range of 1 × 10 11 –1 × 10 13 α/cm 2 to test for self-healing of B 12 P 2 to α bombardment. Prior to irradiation, B 12 P 2 displayed electrical transport characteristics of both hopping and impurity/defect band conduction due to background impurities and growth-induced defects. Fluences of 5 × 10 12 α/cm 2 or greater caused a decrease in the hole mobility and an increase in defect band conduction, suggesting defect accumulation in B 12 P 2 .

36 MATERIALS SCIENCE↗

Selenium-iodide: A low melting point eutectic semiconductor

Inorganic liquid semiconductors are of interest in harsh radiological environments, flexible electronics, and for direct printing of semiconductor devices. Many elemental and compound liquid semiconductors exist, although the lowest melting point is observed for Se at 221 °C. Recently, reports of liquid Se-S systems have shown betavoltaic and alphavoltaic power generation as a liquid with a reduced melting point of 105 °C. Here in this paper, we show the ability to depress the melting point to 57 °C by using equal atomic fractions of selenium and iodine while maintaining semiconducting behavior. A heterojunction structure using ITO and n-GaN as the contacts was selected based on chemical compatibility and predicted band lineups. Electrical and optical measurements were used to deduce the electronic and transport properties of the mixture.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Representation of Clear and Cloudy Boundary Layers in Climate Models

The atmospheric general circulation models which are being used as components of climate models rely on their boundary layer parameterizations to produce realistic simulations of the surface turbulent fluxes of sensible heat. moisture. and momentum: of the boundary-layer depth over which these fluxes converge: of boundary layer cloudiness: and of the interactions of the boundary layer with the deep convective clouds that grow upwards from it. Two current atmospheric general circulation models are used as examples to show how these requirements are being addressed: these are version 3 of the Community Climate Model. which has been developed at the U.S. National Center for Atmospheric Research. and the Colorado State University atmospheric general circulation model. The formulations and results of both models are discussed. Finally, areas for future research are suggested.

Randall, D. A.↗