Engineering topics

Sharma, M. M.

Publications and source records attributed to Sharma, M. M..

4 records

DOE OSTI2024

Type-II superconductivity at 9K in Pb–Bi alloy

In the present work, we report the synthesis of Pb–Bi alloy with enhanced Tc of up to 9K, which is higher than that of Pb. The alloy is synthesized via a solid-state reaction route in the vacuum-encapsulated quartz tube at 700°C in an automated furnace. The synthesized sample is characterized by X-ray Diffraction(XRD) and Energy dispersive X-ray analysis(EDAX) for its phase purity and elemental composition. Rietveld refinement of XRD reveals that the end product is a majority hexagonal Pb 7 Bi 3 , with minor rhombohedral Bi. The electronic transport measurement shows metallic behavior with the Debye temperature of 108K and a superconductivity transition temperature (T c ) below 9K, which is the maximum to date for any reported Pb–Bi alloy, Pb or Bi at ambient pressure. Partial substitution of Bi at the Pb site may modify the free density of electronic states within the BCS model to attain the optimum T c , which is higher by around 2K from the reported T c of Pb. The superconductor phase diagram derived from magneto-transport measurements reveals that the synthesized alloy is a conventional superconductor with an upper critical field (H c2 ) of 3.9 T, which lies well within the Pauli paramagnetic limit. The magnetization measurements carried out following ZFC(Zero Field Cool) protocols infer that the synthesized alloy is a bulk superconductor below 9K. The isothermal M-H(Magnetization vs. Field) measurements performed below T c establish it as a type-II superconductor. Furthermore, the specific heat capacity measurements show that the Pb–Bi alloy is a strongly coupled bulk superconductor below around 9K with possibly two superconducting gaps.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2024

Magneto-transport study on Sn-rich Sn 1–x Ge x thin films enabled by CdTe buffer layer

α-Sn, generally known as gray tin, has attracted significant scientific interest due to its potential to host novel topological phases. Studying the transport properties of α-Sn thin films grown on the InSb substrate has been challenging, as the InSb substrate also significantly contributes to the transport properties. In this article, we report a novel approach to epitaxially grow α-Sn thin films on an InSb substrate with a resistive buffer layer of CdTe. Thin films of α–Sn 1–x Ge x (x = 0, 0.025) alloy of 15 nm thickness have been grown using molecular beam epitaxy. The high quality of the samples has been determined through high-resolution x-ray diffraction. The CdTe buffer layer has high resistance and acts as an insulating virtual substrate, which significantly suppresses contribution from InSb. Magnetotransport measurements show clear Shubnikov–de Hass oscillations in α–Sn 1–x Ge x (x = 0, 0.025) thin films. A change in oscillation frequency is observed upon alloying with Ge, implying a modification in the electronic structure and demonstrating the effectiveness of the CdTe buffer layer approach. Furthermore, this work provides a new approach that enables the electronic transport characterization of the α–Sn 1–x Ge x alloy system, which enables the study of the topological quantum states using electronic transport and their device applications.

36 MATERIALS SCIENCE↗

NASA NTRS1982

Optical crystal temperature gauge with fiber optic connections

An optical temperature gauge uses a semiconductor crystal with a band-edge shift property which is temperature dependent. An external narrow band light source provides optical excitation through a optical fiber and light energy thus passed through the crystal is conveyed by a second optical fiber to a light-to-electric transducers at an external location. The crystal can be located in cryogenic or other systems, to provide remote read-out. The light wavelength is varied (scanned) in a repetitive pattern in source with the instantaneous wavelength passing over the band-edge wavelength during each cycle of the scan. The timing of the crossover is related to the temperature of the crystal by electronic means. Several alternative elements of instrumentation are disclosed. A variation in the basic measurement apparatus is also disclosed, in which the band gap voltage of a light source such as a laser diode is evaluated at the time of band-edge crossover in the crystal and converted to a temperature value.

Sharma, M. M.↗

NASA NTRS1979

Fiber-optic instrumentation: Cryogenic sensor model description

An assessment and determination of technology requirements for developing a demonstration model to evaluate feasibility of practical cryogenic liquid level, pressure, and temperature sensors is presented. The construction of a demonstration model to measure characteristics of the selected sensor and to develop test procedures are discussed as well as the development of an appropriate electronic subsystem to operate the sensors.

Sharma, M. M.↗