Shashkin, I. S. | Search NASA

DOE OSTI2020

Leaky wave in high-power AlGaAs/InGaAs/GaAs semiconductor lasers

Lasers based on AlGaAs/InGaAs/GaAs heterostructures operating in the spectral range of 1.0 − 1.1 μm are investigated in order to optimise cladding layers. The effect of the thickness and composition of the cladding layers on the leakage of radiation from the laser waveguide is analysed. It is shown that for cladding thicknesses of 0.86 − 1.24 μm, it almost does not affect the output optical power. The effect of the crystal length and reflectivity of the laser mirrors on the leaky wave is demonstrated. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2020

Longitudinal spatial hole burning in high-power semiconductor lasers: numerical analysis

Longitudinal spatial hole burning (LSHB) in high-power semiconductor lasers is analysed by numerically solving one-dimensional (1D) rate equations. Calculations are performed for GaAs-based lasers operating at a wavelength of 1.06 μm. It is shown that the LSHB-induced decrease in output power can be accounted for by two mechanisms: build-up of spontaneous recombination and decrease in slope efficiency, equivalent to a rise in internal optical loss. We analyse the influence of different laser chip parameters on the magnitude of the LSHB effect. In particular, it is shown that to suppress LSHB it is preferable to increase the optical confinement factor Γ. We examine the relationship between LSHB and other mechanisms capable of reducing the output power. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗