Engineering topics

Shaw, N. J.

Publications and source records attributed to Shaw, N. J..

8 records

NASA NTRS1986

Structure and grain coarsening during the sintering of alumina

The pore surface area (Sp) and grain-boundary area (Sgb) were measured during the sintering of undoped and doped (100 ppm MgO) alumina compacts. Since the presence of the additive affects only Sgb (raising it at a given value of the density), pinning of the boundaries by solid-solution drag is the only additive function evidenced by the results. The importance of such pinning even at densities as low as 75 percent of theoretical is linked to the existence of microstructural inhomogeneities.

Shaw, N. J.↗

NASA NTRS1982

Thermodynamics of silicon nitridation - Effect of hydrogen

Equilibrium compositions for the nitridization of Si were calculated to detect the effectiveness of H2 in removal of the oxide film and in increasing the concentration of SiO and reducing the proportions of O2. Gibbs free energy for the formation of SiN2O was computed above 1685 K, and at lower temperatures. The thermodynamic properties of SiN2O2 were then considered from 1000-3000 K, taking into account the known thermodynamic data for 39 molecular combinations of the Si, Ni, and O. The gases formed were assumed ideal mixtures with pure phase condensed species. The mole fractions were obtained for a system of SiO2 with each Si particle covered with a thin layer of SiO2 before nitridation, and a system in which the nitriding atmosphere had access to the Si. The presence of H2 was determined to enhance the removal of NiO2 in the first system, decrease the partial pressure of O2, increase the partial pressures of SiO, Si, H2O, NH3, and SiH4, while its effects were negligible in the Si system.

Shaw, N. J.↗

NASA NTRS1982

The combined effects of Fe and H2 on the nitridation of silicon

In view of the support offered by previous work for the suggestion that Fe may affect alpha-Si3N4 formation and microstructural development, a two-part study was conducted to differentiate the effects of H2 and Fe in, first, the nitridation of pure and of Fe-containing powder in N2 and N2-4% H2, and then the nitridation of (1 1 1) Si single crystal wafers with and without Fe powder on the surface. The degree of nitridation is most strongly affected by H2 at 1200 C, but by Fe at 1375 C, where Fe-containing samples in either atmosphere were almost completely nitrided. While neither H2 nor Fe alone changed the ratio of alpha-Si3N4 to beta-Si3N4, the combination of H2 and Fe increased it at both temperatures.

Shaw, N. J.↗

NASA NTRS1981

Nitridation of silicon

Silicon powders with three levels of impurities, principally Fe, were sintered in He or H2. Non-densifying mechanisms of material transport were dominant in all cases. High purity Si showed coarsening in He while particle growth was suppressed in H2. Lower purity powder coarsened in both He and H2. The same three Si powders and Si /111/ single crystal wafers were nitrided in both N2 and N2/H2 atmospheres. Hydrogen increased the degree of nitridation of all three powders and the alpha/beta ratio of the lower purity powder. Some Si3N4 whiskers and open channels through the surface nitride layer were observed in the presence of Fe, correlating with the nitridation-enhancing effects of Fe. Thermodynamic calculations showed that when SiO2 is present on the Si, addition of H2 to the nitriding atmosphere decreases the amount of SiO2 and increases the partial pressure of Si-containing vapor species, that is, Si and SiO. Large amounts of NH3 and SiH4 were also predicted to form.

Shaw, N. J.↗

NASA NTRS1980

Reaction bonded silicon nitride prepared from wet attrition-milled silicon

Silicon powder wet milled in heptane was dried, compacted into test bar shape, helium-sintered, and then reaction bonded in nitrogen-4 volume percent hydrogen. As-nitrided bend strengths averaged approximately 290 MPa at both room temperature and 1400 C. Fracture initiation appeared to be associated with subsurface flaws in high strength specimens and both subsurface and surface flaws in low strength specimens.

Herball, T. P.↗

NASA NTRS1980

Reaction bonded silicon nitride prepared from wet attrition-milled silicon

Silicon powder wet milled in heptane was dried, compacted into test bar shape, helium-sintered, and then reaction bonded in nitrogen-4 vol% hydrogen. As-nitrided bend strengths averaged approximately 290 MPa at both room temperature and 1400 C. Fracture initiation appeared to be associated with subsurface flaws in high-strength specimens and both subsurface and surface flaws in low-strength specimens.

Herbell, T. P.↗

NASA NTRS1979

Formation of porous surface layers in reaction bonded silicon nitride during processing

Microstructural examination of reaction bonded silicon nitride (RBSN) has shown that there is often a region adjacent to the as-nitrided surfaces that is even more porous than the interior of this already quite porous material. Because this layer of large porosity is considered detrimental to both the strength and oxidation resistance of RBSN, a study was undertaken to determine if its formation could be prevented during processing. All test bars studied were made from a single batch of Si powder which was milled for 4 hours in heptane in a vibratory mill using high density alumina cylinders as the grinding media. After air drying the powder, bars were compacted in a single acting die and hydropressed.

Shaw, N. J.↗

NASA NTRS1979

Formation of porous surface layers in reaction bonded silicon nitride during processing

An effort was undertaken to determine if the formation of the generally observed layer of large porosity adjacent to the as-nitride surfaces of reaction bonded silicon nitrides could be prevented during processing. Isostatically pressed test bars were prepared from wet vibratory milled Si powder. Sintering and nitriding were each done under three different conditions:(1) bars directly exposed to the furnance atmosphere; (2) bars packed in Si powder; (3) bars packed in Si3N4 powder. Packing the bars in either Si of Si3N4 powder during sintering retarded formation of the layer of large porosity. Only packing the bars in Si prevented formation of the layer during nitridation. The strongest bars (316 MPa) were those sintered in Si and nitrided in Si3N4 despite their having a layer of large surface porosity; failure initiated at very large pores and inclusions. The alpha/beta ratio was found to be directly proportional to the oxygen content; a possible explanation for this relationship is discussed.

Shaw, N. J.↗