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Sheng, Hongwei

Publications and source records attributed to Sheng, Hongwei.

6 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

A tunable band gap of the layered semiconductor Zn 3 In 2 S 6 under pressure

The band gap is an important property of a semiconductor, and a candidate material with a highly tunable band gap under external tuning parameters will offer wider applications in optoelectronic devices and photocatalytic fields. Here, we show that the layered semiconductor Zn 3 In 2 S 6 possesses a band gap that is highly tunable with pressure. In situ optical absorption shows that the band gap unexpectedly widens with pressure up to ~13 GPa. Sudden gap narrowing then occurs above 14 GPa, which is followed by progressive gap decreases on further compression and the gap finally closes above 20 GPa. Our study, encompassing X-ray diffraction, Raman spectroscopy experiments and theoretical calculations revealed that the selective responses of the different bonds are responsible for the band gap increase in the low-pressure ranges. We show that the pressure-induced irreversible amorphization is responsible for the sudden gap narrowing whereas the semiconductor–metallic transition is related to the amorphous–amorphous transition at high-pressure due to a change in the local coordination number of Zn atoms. This work demonstrates the high tunability of the electronic and optical properties of layered ternary semiconductors under pressure, providing a potential way for wider applications of this class of materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Polyamorphism in a solute-lean Al–Ce metallic glass

Polyamorphism discovered in lanthanide-rich metallic glasses (MGs) has been attributed to the electronic transition of the lanthanide element as a solvent element. In this work, we report that pressure-induced polyamorphism still exists in a Ce-poor Al 93 Ce 7 binary MG where the 4f electron element serves as a solute and solute–solute avoidance is expected. The polyamorphic transition, observed by in situ high-pressure synchrotron x-ray diffraction, is accompanied by a volume collapse of ~0.78% and occurs over a narrow pressure range from ~0.8 to ~1.8 GPa. Further synchrotron Ce L 3 -edge x-ray absorption spectroscopy measurements reveal that pressure-induced 4f electron delocalization underlies the polyamorphic transition. Molecular dynamics simulations confirm that the Ce atoms in the MG are completely isolated by the solvent Al atoms. This result demonstrates that 4f element-bearing alloys with extremely dilute concentrations can also exhibit polyamorphic states originating from electronic transitions, extending the compositional space of polyamorphism of MGs into very dilute regions. Our work suggests that tunable properties under compressive stress could be achieved in MGs by even minor doping of elements prone to electronic transitions.

36 MATERIALS SCIENCE↗
DOE OSTI2020

High-pressure strengthening in ultrafine-grained metals

The Hall–Petch relationship, according to which the strength of a metal increases as the grain size decreases, has been reported to break down at a critical grain size of around 10 to 15 nanometres. As the grain size decreases beyond this point, the dominant mechanism of deformation switches from a dislocation-mediated process to grain boundary sliding, leading to material softening. In one previous approach, stabilization of grain boundaries through relaxation and molybdenum segregation was used to prevent this softening effect in nickel–molybdenum alloys with grain sizes below 10 nanometres. Here we track in situ the yield stress and deformation texturing of pure nickel samples of various average grain sizes using a diamond anvil cell coupled with radial X-ray diffraction. Our high-pressure experiments reveal continuous strengthening in samples with grain sizes from 200 nanometres down to 3 nanometres, with the strengthening enhanced (rather than reduced) at grain sizes smaller than 20 nanometres. Here, we achieve a yield strength of approximately 4.2 gigapascals in our 3-nanometre-grain-size samples, ten times stronger than that of a commercial nickel material. A maximum flow stress of 10.2 gigapascals is obtained in nickel of grain size 3 nanometres for the pressure range studied here. We see similar patterns of compression strengthening in gold and palladium samples down to the smallest grain sizes. Simulations and transmission electron microscopy reveal that the high strength observed in nickel of grain size 3 nanometres is caused by the superposition of strengthening mechanisms: both partial and full dislocation hardening plus suppression of grain boundary plasticity. These insights contribute the ongoing search for ultrastrong metals via materials engineering.

36 MATERIALS SCIENCE↗