Engineering topics
Publications and source records attributed to Sher, A..
Solid-state converters yield high sensitivity at high information-retrieval speed. Main advantages are high sensitivity of photocapacitive mechanism and inherent speed of information retrieval method. Fabrication of both devices is relatively simple and inexpensive.
Refined quasi-static and conductance methods, based on effectively thin composite insulating layers, low-carrier-concentration bulk semiconductors, and low-level illumination, have been applied to an improved characterization of the (100) Si-SiO2 interface. Accurate measurement of both the total density of interface states and its major components as a function of energy in the forbidden gap have been made over four decades (10-billion to 100-trillion states/eV sq cm) on a single sample. The normal U-shaped density of states is resolved into separate valence- and conduction-band-derived contributions as well as impurity-derived contributions corresponding to concentrations on the order of 20 ppm at the interface.
Improvement of the previously reported photocapacitive MIS infrared detectors has led to the development of exceptional room-temperature devices. Unoptimized peak detectivities on the order of 10 to the 13th cm sq rt Hz/W, a value which exceeds the best obtainable from existing solid-state detectors, have now been consistently obtained in Si and GaAs devices using high-capacitance LaF3 or composite LaF3/native-oxide insulating layers. The measured spectral response of representative samples is presented and discussed in detail together with a simple theory which accounts for the observed behavior. The response of an ideal MIS photocapacitor is also contrasted with that of both a conventional photoconductor and a p-i-n photodiode, and reasons for the superior performance of the MIS detectors are given. Finally, fundamental studies on the electrical, optical, and noise characteristics of the MIS structures are analyzed and discussed in the context of infrared-detector applications.
Lightly doped semiconductor device, with transparent insulating layer based on capacitive response to radiant energy, exhibits excellent sensitivities at room temperature.
Thin films of LaF3 deposited on Si or GaAs substrates have been observed to form blocking contacts with very high capacitances. This results in comparatively hysteresis-free and sharp C-V (capacitance-voltage) characteristics for MIS structures. Such structures have been used to study the interface states of GaAs with increased resolution and to construct improved photocapacitive infrared detectors.
The inventions and published papers related to the project are listed. The research with thin films of LaF3 deposited on GaAs substrates is reported along with improvements in photocapacitative MIS infrared detectors.
A new class of room-temperature infrared detectors has been developed through use of metal-insulator-semiconductor (MIS) or metal-insulator-semiconductor-insulator-metal (MISIM) slabs. The detectors, which have been fabricated from Si, Ge and GaAs, rely for operation on the electrical capacitance variations induced by modulated incident radiation. The peak detectivity for a 1000-A Si MISIM detector is comparable to that of a conventional Si detector functioning in the photovoltaic mode. Optimization of the photocapacitive-mode detection sensitivity is discussed.
Device functions near room temperature and is not sensitive to vibrations.
A class of infrared detectors is proposed, and experimental results are presented for a prototype device. The material used is LaF3, an ionic conductor with a capacitance that varies exponentially with temperature. The detectivity of a prototype detector is estimated from measured signal voltages and incident power, and a Johnson noise voltage is calculated from the measured resistance. At a modulation frequency of 20 Hz, the estimated detectivity is about 2 million cm/sq root Hz/W. For the parameters characterizing this device, the estimated detectivity is consistent with a theoretical prediction. The theory further predicts an optimum detectivity of about 1 billion cm/sq root Hz/W for much thinner devices than the prototypes.
A single-band model calculation is developed for the effect of strain on the temperature variation of the electronic density of states and the electrical onductivity of disordered binary alloys. Experimentally, strain has only a small effect on the temperature variation of the conductivity. Shifts in the Fermi level and distortions of the density of states under different strains are found from the calculations. The small change in the temperature variation of conductivity under strain is a result of competition between these two effects. Methods to extract physical parameters characterizing alloys from measurements of the strain and temperature variation of the resistivity are discussed. Suggestions are also made about materials-selection criteria for strain-gauge applications.
A class of infrared detectors is proposed and experimental results are presented for a prototype device. The material used is LaF3, an ionic conductor with a capacitance that varies exponentially with temperature. The detectivity of a prototype detector is estimated from measured signal voltages and incident power, and a Johnson noise voltage calculated from the measured resistance. For the parameters characterizing this device the estimated detectivity is consistent with a theoretical prediction. The theory further predicts an optimum detectivity for much thinner devices than the prototypes.
The two-electron bond-orbital model of tetrahedrally-coordinated solids is generalized and its application extended. All intrabond matrix elements entering the formalism are explicitly retained, including the direct overlap S between the anion and cation sp3 hybrid wavefunctions. Complete analytic results are obtained for the six two-electron eigenvalues and eigenstates of the anion-cation bond in terms of S, one-electron parameters V2 and V3, and two-electron correlation parameters V4, V5 and V6. Refined formulas for the dielectric constant and the nuclear exchange and pseudodipolar coefficients, as well as new expressions for the valence electron density, polarity of the bond and the cohesive energy, are then derived. The theory gives a good account of the experimentally observed trends in all properties considered and approximate quantitative agreement is achieved for the pseudodipolar coefficient.
The one-electron bond-orbital model of Harrison (1973) for tetrahedrally coordinated solids is modified to a two-electron model using a generalization of Falicov and Harris' (1969) method for treating the hydrogen molecule. Expressions for nuclear-exchange and pseudodipolar interactions are obtained in terms of bond-orbital model parameters. The eigenfunctions and eigenvalues of the Hamiltonian are employed along with standard perturbation theory to calculate the energy shifts resulting from the application of an external electric field and induced by the magnetic interaction between the nuclear spins and the bond-electron spins. The quantitative predictions of the derived formulas are examined for real semiconductors involving elements and compounds from periodic groups III, IV, and V. It is concluded that the present two-electron model makes it possible to assess the quantitative effects of electron correlation in the anion-cation bond for both nonmagnetic properties (electric susceptibility, dielectric constant) and magnetic properties (nuclear-exchange and pseudodipolar interactions) of various materials.
Harrison's one-electron bond-orbital model of tetrahedrally coordinated solids was generalized to a two-electron model, using an extension of the method of Falicov and Harris for treating the hydrogen molecule. The six eigenvalues and eigenstates of the two-electron anion-cation Hamiltonian entering this theory can be found exactly general. The two-electron formalism is shown to provide a useful basis for calculating both non-magnetic and magnetic properties of semiconductors in perturbation theory. As an example of the former, expressions for the electric susceptibility and the dielectric constant were calculated. As an example of the latter, new expressions for the nuclear exchanges and pseudo-dipolar coefficients were calculated. A simple theoretical relationship between the dielectric constant and the exchange coefficient was also found in the limit of no correlation. These expressions were quantitatively evaluated in the limit of no correlation for twenty semiconductors.
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A model calculation of the temperature dependence of the electronic density of states and the electrical conductivity of disordered binary alloys, based on the coherent-potential approximation is made by introducing thermal disorder in the single-band model (Velicky and others). Thermal disorder is found to broaden and smear the static-alloy density of states. The electrical resistivity in weak-scattering alloys always increases with temperature. However, in the strong-scattering case, the temperature coefficient of resistivity can be positive, zero, or negative, depending on the location of the Fermi energy.-
Temperature effects on electrical resistivity of metallic strain gage materials