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Sher, A.

Publications and source records attributed to Sher, A..

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

HgCdTe versus HgZnTe - Electronic properties and vacancy formation energies

The alloy variation of the band gap and the electron and hole effective masses have been calculated for HgCdTe and HgZnTe. Band-gap bowing is larger in HgZnTe than in HgCdTe because of the larger bond length mismatch of HgTe and ZnTe; electron and hole effective masses are found to be comparable for the two alloys for a given band gap. The electron mobility was calculated in both alloys with contributions from phonon, impurity, and alloy scattering. Contributions to the E1 line width due to alloy and impurity scattering in Hg(0.7)Cd(03)Te have been calculated. Results of calculations of the vacancy formation energies in HgTe, ZnTe, and CdTe are discussed.

Berding, M. A.↗
NASA NTRS1986

Structural properties of bismuth-bearing semiconductor alloys

The structural properties of bismuth-bearing III-V semiconductor alloys are addressed. Because the Bi compounds are not known to form zincblende structures, only the anion-substituted alloys InPBi, InAsBi, and InSbBi are considered candidates as narrow-gap semiconductors. Miscibility calculations indicate that InSbBi will be the most miscible, and InPBi, with the large lattice mismatch of the constituents, will be the most difficult to mix. Calculations of the hardness of the Bi compounds indicate that, once formed, the InPBi alloy will be harder than the other Bi alloys, and substantially harder than the currently favored narrow-gap semiconductor HgCdTe. Thus, although InSbBi may be an easier material to prepare, InPBi promises to be a harder material. Growth of the Bi compounds will require high effective growth temperatures, probably attainable only through the use of nonequilibrium energy-assisted epitaxial growth techniques.

Berding, M. A.↗
NASA NTRS1983

Techniques for improving the Si-SiO2 interface characterization

The two techniques which have provided most of the information on interface states in MIS-C (metal-insulator-semiconductor-capacitor) structures are the 'quasi-static method' and the 'conductance method'. Sher et al. (1979) and Su et al. (1980) have suggested a number of improvements concerning these methods. The present investigation has the objective to extend the earlier results and to offer a new tentative interpretation of the data. A critical review is conducted of the data collection and reduction techniques for the quasi-static method, taking into account the sample, the quasi-static capacitance, and the surface potential. In connection with a discussion of the conductance method, attention is given to parallel conductance and capacitance measurements, interface-state densities, time constants, and measurements on a (110) surface orientation.

Sher, A.↗
NASA NTRS1982

Photocapacitive image converter

An apparatus for converting a radiant energy image into corresponding electrical signals including an image converter is described. The image converter includes a substrate of semiconductor material, an insulating layer on the front surface of the substrate, and an electrical contact on the back surface of the substrate. A first series of parallel transparent conductive stripes is on the insulating layer with a processing circuit connected to each of the conductive stripes for detecting the modulated voltages generated thereon. In a first embodiment of the invention, a modulated light stripe perpendicular to the conductive stripes scans the image converter. In a second embodiment a second insulating layer is deposited over the conductive stripes and a second series of parallel transparent conductive stripes perpendicular to the first series is on the second insulating layer. A different frequency current signal is applied to each of the second series of conductive stripes and a modulated image is applied to the image converter.

Miller, W. E.↗
NASA NTRS1981

Insulators for Pb(1-x)Sn(x)Te

Thin films of LaF3 were e-gun and thermally deposited on several substrates. The e-gun deposited films are fluorine deficient, have high ionic conductivities that persist to 77 K, and high effective dielectric constants. The thermally deposited material tends to be closer to stoichiometric, and have higher effective breakdown field strengths. Thermally deposited LaF3 films with resistivities in excess of 10 to the 12th power ohms - cm were deposited on metal coated glass substrates. The LaF3 films were shown to adhere well to PbSnTe, surviving repeated cycles between room temperature and 77 K. The LaF3 films on GaAs were also studied.

Tsuo, Y. H.↗
NASA NTRS1980

Photocapacitive image converter

Solid-state converters yield high sensitivity at high information-retrieval speed. Main advantages are high sensitivity of photocapacitive mechanism and inherent speed of information retrieval method. Fabrication of both devices is relatively simple and inexpensive.

Miller, W. E.↗
NASA NTRS1980

Improved characterization of the Si-SiO2 interface

Refined quasi-static and conductance methods, based on effectively thin composite insulating layers, low-carrier-concentration bulk semiconductors, and low-level illumination, have been applied to an improved characterization of the (100) Si-SiO2 interface. Accurate measurement of both the total density of interface states and its major components as a function of energy in the forbidden gap have been made over four decades (10-billion to 100-trillion states/eV sq cm) on a single sample. The normal U-shaped density of states is resolved into separate valence- and conduction-band-derived contributions as well as impurity-derived contributions corresponding to concentrations on the order of 20 ppm at the interface.

Su, P.↗
NASA NTRS1980

Si and GaAs photocapacitive MIS infrared detectors

Improvement of the previously reported photocapacitive MIS infrared detectors has led to the development of exceptional room-temperature devices. Unoptimized peak detectivities on the order of 10 to the 13th cm sq rt Hz/W, a value which exceeds the best obtainable from existing solid-state detectors, have now been consistently obtained in Si and GaAs devices using high-capacitance LaF3 or composite LaF3/native-oxide insulating layers. The measured spectral response of representative samples is presented and discussed in detail together with a simple theory which accounts for the observed behavior. The response of an ideal MIS photocapacitor is also contrasted with that of both a conventional photoconductor and a p-i-n photodiode, and reasons for the superior performance of the MIS detectors are given. Finally, fundamental studies on the electrical, optical, and noise characteristics of the MIS structures are analyzed and discussed in the context of infrared-detector applications.

Sher, A.↗
NASA NTRS1979

LaF3 insulators for MIS structures

Thin films of LaF3 deposited on Si or GaAs substrates have been observed to form blocking contacts with very high capacitances. This results in comparatively hysteresis-free and sharp C-V (capacitance-voltage) characteristics for MIS structures. Such structures have been used to study the interface states of GaAs with increased resolution and to construct improved photocapacitive infrared detectors.

Sher, A.↗
NASA NTRS1979

New infrared detectors and solar cells

The inventions and published papers related to the project are listed. The research with thin films of LaF3 deposited on GaAs substrates is reported along with improvements in photocapacitative MIS infrared detectors.

Sher, A.↗
NASA NTRS1978

Photocapacitive MIS infrared detectors

A new class of room-temperature infrared detectors has been developed through use of metal-insulator-semiconductor (MIS) or metal-insulator-semiconductor-insulator-metal (MISIM) slabs. The detectors, which have been fabricated from Si, Ge and GaAs, rely for operation on the electrical capacitance variations induced by modulated incident radiation. The peak detectivity for a 1000-A Si MISIM detector is comparable to that of a conventional Si detector functioning in the photovoltaic mode. Optimization of the photocapacitive-mode detection sensitivity is discussed.

Sher, A.↗
NASA NTRS1976

LaF3 infrared detector

A class of infrared detectors is proposed, and experimental results are presented for a prototype device. The material used is LaF3, an ionic conductor with a capacitance that varies exponentially with temperature. The detectivity of a prototype detector is estimated from measured signal voltages and incident power, and a Johnson noise voltage is calculated from the measured resistance. At a modulation frequency of 20 Hz, the estimated detectivity is about 2 million cm/sq root Hz/W. For the parameters characterizing this device, the estimated detectivity is consistent with a theoretical prediction. The theory further predicts an optimum detectivity of about 1 billion cm/sq root Hz/W for much thinner devices than the prototypes.

Sher, A.↗
NASA NTRS1976

Strain effect on the electronic density of states and dc conductivity of disordered binary alloys

A single-band model calculation is developed for the effect of strain on the temperature variation of the electronic density of states and the electrical onductivity of disordered binary alloys. Experimentally, strain has only a small effect on the temperature variation of the conductivity. Shifts in the Fermi level and distortions of the density of states under different strains are found from the calculations. The small change in the temperature variation of conductivity under strain is a result of competition between these two effects. Methods to extract physical parameters characterizing alloys from measurements of the strain and temperature variation of the resistivity are discussed. Suggestions are also made about materials-selection criteria for strain-gauge applications.

Hwang, H.-C.↗
NASA NTRS1976

Construction of prototypes of a new class of infrared detectors

A class of infrared detectors is proposed and experimental results are presented for a prototype device. The material used is LaF3, an ionic conductor with a capacitance that varies exponentially with temperature. The detectivity of a prototype detector is estimated from measured signal voltages and incident power, and a Johnson noise voltage calculated from the measured resistance. For the parameters characterizing this device the estimated detectivity is consistent with a theoretical prediction. The theory further predicts an optimum detectivity for much thinner devices than the prototypes.

Sher, A.↗
NASA NTRS1976

Two-electron bond-orbital model, 2

The two-electron bond-orbital model of tetrahedrally-coordinated solids is generalized and its application extended. All intrabond matrix elements entering the formalism are explicitly retained, including the direct overlap S between the anion and cation sp3 hybrid wavefunctions. Complete analytic results are obtained for the six two-electron eigenvalues and eigenstates of the anion-cation bond in terms of S, one-electron parameters V2 and V3, and two-electron correlation parameters V4, V5 and V6. Refined formulas for the dielectric constant and the nuclear exchange and pseudodipolar coefficients, as well as new expressions for the valence electron density, polarity of the bond and the cohesive energy, are then derived. The theory gives a good account of the experimentally observed trends in all properties considered and approximate quantitative agreement is achieved for the pseudodipolar coefficient.

Huang, C.↗
NASA NTRS1975

Two-electron bond-orbital model. I

The one-electron bond-orbital model of Harrison (1973) for tetrahedrally coordinated solids is modified to a two-electron model using a generalization of Falicov and Harris' (1969) method for treating the hydrogen molecule. Expressions for nuclear-exchange and pseudodipolar interactions are obtained in terms of bond-orbital model parameters. The eigenfunctions and eigenvalues of the Hamiltonian are employed along with standard perturbation theory to calculate the energy shifts resulting from the application of an external electric field and induced by the magnetic interaction between the nuclear spins and the bond-electron spins. The quantitative predictions of the derived formulas are examined for real semiconductors involving elements and compounds from periodic groups III, IV, and V. It is concluded that the present two-electron model makes it possible to assess the quantitative effects of electron correlation in the anion-cation bond for both nonmagnetic properties (electric susceptibility, dielectric constant) and magnetic properties (nuclear-exchange and pseudodipolar interactions) of various materials.

Huang, C.↗