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Shi, Hongsheng [ShanghaiTech University (China)]

Publications and source records attributed to Shi, Hongsheng [ShanghaiTech University (China)].

Mosaic lateral heterostructures in two-dimensional perovskite

Lateral heterostructures are important for exploring exotic physics, developing new devices and achieving device miniaturization. Endo-epitaxial growth occurring in patterned templates presents a promising strategy to realize extensive patterned areas in heterostructures, as recently demonstrated with two-dimensional (2D) covalent materials. However, the conventional lithography and etching processes used to prepare patterned templates are too aggressive for 2D lead halide perovskites, owing to their inherently soft and unstable ionic lattice. Here we create square holes of controllable size within 2D lead halide perovskites, enabling the fabrication of continuous lateral heterostructures over large areas. We demonstrate that the square holes form through spontaneous etching, a process initiated by internal strain and stabilized along the [100]/[010] crystallographic direction. Furthermore, the size of the square holes can be controlled by adjusting the etching time and temperature. Moreover, by incorporating a rapid solvent evaporation growth technique, the edges of the square holes act as templates for epitaxial growth of another type of perovskite, incorporating different halide or metal ions. Finally, we realized a series of mosaic lateral heterostructures that can emit various colours for light-emitting devices. As a result, this synthesis of diverse 2D perovskite mosaic lateral heterostructures provides valuable insights into the structural characteristics of perovskites and offers a versatile material platform for the development of complex integrated emitting devices.

Organic–inorganic nanostructures↗

Atomically resolved edges and defects in lead halide perovskites

Although edges and defects constitute only a small fraction of crystalline materials, they exert an outsized impact on a material′s properties. Organic–inorganic halide perovskites are promising next-generation semiconductor materials with superior cost effectiveness and interesting optoelectronic properties. However, clear images of their edges have remained challenging to obtain owing to their extreme sensitivity. Using truly high-speed ultralow-dose four-dimensional scanning transmission electron microscopy with dose fractionation, we perform ptychography at, to our knowledge, the lowest-dose atomic resolution to date, revealing not only the detailed atomic structure of the edges of a halide perovskite but also their structural dynamics. Here, a majority methylammonium (MA) and iodine (I) edge termination is observed in methylammonium lead iodide (MAPbI 3 ), and the damage rate of its edges and internal defects is found to depend on the concentration and type of vacancies present, with a preponderance of I vacancies in particular correlating with higher rates of damage.

4D-STEM↗