Engineering topics

Shi, Mengzhu

Publications and source records attributed to Shi, Mengzhu.

3 records

DOE OSTI2024

Large oscillatory thermal hall effect in kagome metals

The thermal Hall effect recently provided intriguing probes to the ground state of exotic quantum matters. These observations of transverse thermal Hall signals lead to the debate on the fermionic versus bosonic origins of these phenomena. The recent report of quantum oscillations (QOs) in Kitaev spin liquid points to a possible resolution. The Landau level quantization would most likely capture only the fermionic thermal transport effect. However, the QOs in the thermal Hall effect are generally hard to detect. In this work, we report the observation of a large oscillatory thermal Hall effect of correlated Kagome metals. We detect a 180-degree phase change of the oscillation and demonstrate the phase flip as an essential feature for QOs in the thermal transport properties. More importantly, the QOs in the thermal Hall channel are more profound than those in the electrical Hall channel, which strongly violates the Wiedemann–Franz (WF) law for QOs. This result presents the oscillatory thermal Hall effect as a powerful probe to the correlated quantum materials.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Magnetic breakdown and spin-zero effect in quantum oscillations in kagome metal CsV3Sb5

Abstract In the recently discovered kagome metal CsV 3 Sb 5 , an intriguing proposal invoking a doped Chern insulator state suggests the presence of small Chern Fermi pockets hosting spontaneous orbital-currents and large orbital magnetic moments. While the net thermodynamic magnetization is nearly insensitive to these moments, due to their antiferromagnetic alignment, their presence can be revealed by the Zeeman effect, which shifts electron energies in magnetic fields with a proportionality given by the effective g −factor. Here, we determine the g -factor using the spin-zero effect in magnetic quantum oscillations. A large g -factor enhancement is visible only in magnetic breakdown orbits between conventional and concentrated Berry curvature Fermi pockets that host large orbital moments. Such Berry-curvature-generated large orbital moments are almost always concealed by other effects. In this system, however, magnetic breakdown orbits due to the proximity to a conventional Fermi-surface section allow them to be visibly manifested in magnetic quantum oscillations. Our results provide a remarkable example of the interplay between electronic correlations and more conventional electronic bands in quantum materials.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Manipulating high-temperature superconductivity by oxygen doping in Bi2Sr2CaCu2O8+δ thin flakes

Abstract Harnessing the fascinating properties of correlated oxides requires precise control of their carrier density. Compared to other methods, oxygen doping provides an effective and more direct way to tune the electronic properties of correlated oxides. Although several approaches, such as thermal annealing and oxygen migration, have been introduced to change the oxygen content, a continuous and reversible solution that can be integrated with modern electronic technology is much in demand. Here, we report a novel ionic field-effect transistor using solid Gd-doped CeO2 as the gate dielectric, which shows a remarkable carrier-density-tuning ability via electric-field-controlled oxygen concentration at room temperature. In Bi2Sr2CaCu2O8+δ (Bi-2212) thin flakes, we achieve a reversible superconductor–insulator transition by driving oxygen ions in and out of the samples with electric fields, and map out the phase diagram all the way from the insulating regime to the over-doped superconducting regime by continuously changing the oxygen doping level. Scaling analysis indicates that the reversible superconductor–insulator transition for the Bi-2212 thin flakes follows the theoretical description of a two-dimensional quantum phase transition. Our work provides a route for realizing electric-field control of phase transition in correlated oxides. Moreover, the configuration of this type of transistor makes heterostructure/interface engineering possible, thus having the potential to serve as the next-generation all-solid-state field-effect transistor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗