Direct visualization of anionic electrons in an electride reveals inhomogeneities
Anionic electron within an electride was visualized with atomic resolution using differential phase-contrast imaging.
Engineering topics
Publications and source records attributed to Shibata, Naoya.
Anionic electron within an electride was visualized with atomic resolution using differential phase-contrast imaging.
The continuing development of aberration correctors for the scanning transmission electron microscope (STEM) offers the possibility of locating single atoms in crystals in 3D via optical depth sectioning. The main factors that determine the feasibility of such an approach are visibility and dose requirements. In this paper, we show how Poisson's statistics can be quantitatively incorporated into STEM image simulations and demonstrate that the 3D location of single cerium atoms in wurtzite-type aluminum nitride is indeed feasible under large-angle illumination conditions with a relatively low dose. We also show that chromatic aberration does not presently represent a limitation provided a cold field emission source is used. Finally, these results suggest efforts into improved aberration corrector designs for larger illumination angles that offer significant potential for 3D structure determination of materials.
Sn-Al co-doped polycrystalline ZnO ceramics were prepared by sintering in air. Phase and microstructure analysis was performed by X-ray diffraction and SEM-EDS and thermoelectric properties were measured. XRD analysis showed a ZnO primary phase as well as secondary phase peaks due to the formation of a Zn{sub 2}SnO{sub 4} spinel phase or SnO{sub 2}(ZnO:Sn-Al){sub m} intergrowth phase. SEM analysis revealed a dense microstructure with a small number of nanometric pores, consistent with the measured density of 5.48 g/cm{sup 3}. An activated electrical conductivity characteristic of a semiconducting material was observed as well as a negative Seebeck coefficient with both values increasing in absolute value from RT to 730 °C. The power factor had a maximum value of 3.73×10{sup −4} W m{sup −1} K{sup −2} at 730 °C. Thermal conductivity measurements showed a significant reduction over the measured temperature range compared to undoped ZnO. This could be attributed to grain size reduction, the formation of a nanoscale secondary phase or a reduction in crystallinity caused by Sn-Al co-doping. A maximum ZT of 0.06 was obtained at 750 °C for the Sn-Al co-doped ZnO ceramics.