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Shimpi, Tushar

Publications and source records attributed to Shimpi, Tushar.

4 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Modeling of the effectiveness of novel edge seal designs for fast, low‐Cap‐Ex manufacturing

Abstract In the manufacturing of photovoltaic (PV) modules, the lamination process can take up to 20 min to complete. In this work, new lamination processes are being developed, and have been prototyped, which hope to be able to cut this time down to as little as 30 s. This could provide significant savings in the cost of lamination equipment, floor space, and energy. PV modules are expected to have a lifespan exceeding 20 to 30 years. For moisture‐sensitive PV technologies, the edge seal between the two layers of glass can be the weakest point of its reliability. There is an inherent challenge when evaluating edge seal materials due to their low permeation rates. As part of Colorado State University's Photovoltaic Research and Development 2, work at the National Renewable Energy Laboratory has developed models to evaluate edge seal configurations in glass‐glass PV modules. Here, this new manufacturing process is evaluated for long‐term moisture durability. Different edge seal design options within glass–glass PV modules are explored. Most of these designs are targeting a superstrate on glass configuration, e.g CdTe, but some designs could be used on conventional crystalline Si cells. Using COMSOL finite element simulation software, we investigated the edge seal and interlayer design configurations containing silicone perimeter edge adhesive, desiccated polyisobutylene‐based edge seal, air, and polyolefin while integrating climate conditions equivalent to a hot and humid environment such as Miami, Florida. We found optimized configurations that will allow the module to prevent moisture ingress over 50 years minimizing the amount of time and material used while utilizing polymers that are easily dispensed.

14 SOLAR ENERGY↗
DOE OSTI2023

A comprehensive material study of CdSeTe films deposited with differing selenium compositions

The addition of selenium into CdTe to create the ternary alloy CdSeTe has been one of the most impactful advancements to CdTe-based photovoltaics in the last decade. CdSeTe/CdTe bilayer device structures have enabled a gain in short-circuit current due to the narrower bandgap of the alloy, with minimal to no loss in voltage. Intensity of photoluminescence and time-resolved photoluminescence measurements suggest this is due to an increase in carrier lifetime and concomitant greater fraction of radiative vs non-radiative recombination events which allows for a reduction in the voltage deficit. Here, in this work, we study the properties of as-deposited and CdCl 2 -treated CdSeTe films deposited by close-space sublimation under varying conditions from CdSeTe source charges with both 20 and 40 mol% CdSe. We find that the selenium content in the deposited films are substantially reduced from that of the source material. Additionally, deposition temperature, particularly that of the substrate, considerably affects the grain size, crystallinity, and photoluminescence of the material, illustrating the importance of source material selection and process optimization. Finally, we present evidence that the source material, and therefore the properties of the deposited films, change over time as the source material is used.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Metastability and Degradation of CdTe Solar Cells Investigated by nm-Scale Electrical Potential Imaging

We report on investigations of reversible metastability and irreversible degradation of MZO/CdSeTe/CdTe devices from the perspective of electric field across the device using Kelvin probe force microscopy (KPFM). The device showed reversible transitions between the light-soak state (LSS) with the best device efficiency and the dark-soak state (DSS) with an inferior efficiency. However, it showed an irreversible degradation state (DgS) driven by long-hour light soaking at an elevated temperature. The nm-scale KPFM electric field imaging on cross-sections of the devices revealed different anomalous electric field profiles. The electric field at the LSS exhibits a main peak inside the CdSeTe layer but not at the MZO/CdSeTe heterointerface, demonstrating that working junction of the device is a buried homojunction (BHJ). At the DSS, a second electric field peak was observed at the MZO/CdSeTe interface with a similar strength to the main BHJ, which probably caused the decrease in fill factor at the DSS. At the DgS, the electric field peak at the MZO/CdSeTe interface increased significantly and a third electric field was measured at the back contact of the device. Device modeling using COMSOL and in alignment with both the electric field and device current-voltage curves suggest that a slightly low n-doped CdSeTe in the region near the MZO/CdSeTe interface caused the BHJ, and that either a loss of MZO doping or increase of the conduction band offset spike due to long-term stress caused the fill factor-dominated degradation and the increased electric field near the MZO/CdSeTe interface at the DgS. The former, MZO doping decrease, is more plausible by referring the related literature.

BHJ↗