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Shrestha, Niraj

Publications and source records attributed to Shrestha, Niraj.

Enabling bifacial thin film devices by developing a back surface field using Cu x AlO y

Bifacial solar cells have the potential to increase the energy yield per unit area over traditional monofacial devices without significant added cost, driving $/kWh costs lower and accelerating the adoption of solar photovoltaics. However, the performance of bifacial thin film solar cells significantly lags that achieved by crystalline silicon cells. Here we incorporate wide bandgap Cu x AlO y as a back buffer layer for CdTe devices and achieve a backside illuminated device with high current density and high fill factor. Moreover, these values remain nearly constant even as the absorber layer thickness changes, indicating that a fully-depleted device is not required for efficient charge collection. We show that this response is indicative of a back surface field, albeit with a persistent high back surface recombination velocity. By managing electron reflection, we achieved a backside illumination conversion efficiency of 7.1% and bifaciality of 0.55 for a 3.3 µm CdTe device and 8.0% and 0.62 for a 2 µm device. Future improvements can be made by identifying and incorporating a passivation material that reduces the back surface recombination velocity.

36 MATERIALS SCIENCE↗

Low-bandgap mixed tin–lead iodide perovskites with reduced methylammonium for simultaneous enhancement of solar cell efficiency and stability

High-performance perovskite/perovskite tandem solar cells require high-efficiency and stable low-bandgap perovskite subcells. State-of-the-art low-bandgap mixed tin–lead iodide perovskite solar cells exhibit either a high power-conversion efficiency or improved stability, but not both. In this article we report a two-step bilayer interdiffusion growth process to simultaneously meet both requirements for formamidinium-based low-bandgap mixed tin–lead iodide perovskite solar cells. The bilayer interdiffusion growth process allows for the formation of high-quality and large-grained perovskite films with only 10 mol% volatile methylammonium. Additionally, one-dimensional pyrrolidinium perovskite was applied to passivate the perovskite film and improve the junction quality, which resulted in a carrier lifetime of 1.1 µs and an open circuit voltage of 0.865 V for our perovskite film and device with a bandgap of 1.28 eV. Our strategies enabled a power-conversion efficiency of 20.4% for low-bandgap perovskite solar cells under AM 1.5G illumination. More importantly, an encapsulated device can retain 92% of its initial efficiency after 450 h of continuous 1 sun illumination.

14 SOLAR ENERGY↗

Arylammonium-Assisted Reduction of the Open-Circuit Voltage Deficit in Wide-Bandgap Perovskite Solar Cells: The Role of Suppressed Ion Migration

Surface treatment using large alkyl/aryl ammonium cations has demonstrated reduced open-circuit voltage (V OC ) deficits in perovskite solar cells (PSCs), but the origin of the improvements has been vaguely attributed to defect passivation. Here, we combine the microscopic probing of the local electrical properties, thermal admittance spectroscopic analysis, and first principles calculations to elucidate the critical role of arylammonium interface layers on suppressing the ion migration in wide-bandgap (WBG) PSCs. Our results reveal that arylammonium surface treatment using phenethylammonium iodide increases the activation energy barrier for ion migration on the surface, which suppresses the accumulation of charge defects at surface and grain boundaries (GBs), leading to reduced dark saturation current density in WBG PSCs. Furthermore, with device optimization, our champion 1.73-eV PSC delivers a power conversion efficiency of 19.07% with a V OC of 1.25 V, achieving a V OC -deficit of 0.48 V.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Doping of CdTe Using CuCl2 Solution for Highly Efficient Photovoltaic Devices

Here, we report doping of cadmium telluride (CdTe) thin film solar cells using copper (II) chloride (CuCl 2 ) solution in deionized water. The CdTe thin films were immersed in 0.1 mmol CuCl 2 solution in water and annealed in the temperature range of 180-240 degrees C for various time durations. The devices were completed using thermally evaporated gold (Au) and measured under simulated AM1.5G spectrum. The average device efficiency of CuCl 2 treated CdTe devices increased to 13.7 % (best cell reaching 14.0%) with significant improvement on open-circuit voltage (VOC ) as compared with 12.4% (best cell 12.7%) for thermally evaporated Cu doped CdTe devices. For CuCl 2 treated CdTe devices, we found higher photoluminescence (PL) intensity and longer carrier life time at room temperature indicating solution based doping offers better control of Cu doping density as compared with evaporated Cu.

14 SOLAR ENERGY↗