Operational Conditions of Silicon Pixel Arrays for X-Ray Spectroscopy
Arrays of silicon sensors can be utilized in those spectroscopic applications where a high event throughput is needed, for example in synchrotron-based experiments. Yet, in such arrays several noise contributions, beyond the well-known leakage, thermal and flicker noises, can be present which are absent in single channel detectors. Additional noise is generated ultimately by the condition at the silicon/silicon oxide interface, which in turn depends on the parameters of the silicon oxide over the not-implanted gaps. We discuss how to control this region to obtain the best spectroscopic performances.