Engineering topics

Sieg, Robert M.

Publications and source records attributed to Sieg, Robert M..

5 records

NASA NTRS1993

Ellipsometric study of ambient-produced overlayer growth rate on YBa2Cu3O(7-x) films

An ellipsometric study of ambient-reaction-produced BaCO3 overlayer growth on laser-ablated YBCO is presented as a function of time. The effects of the anisotropy of YBCO on the ellipsometric data inversion process are discussed, and it is concluded that with certain restrictions on the data acquisition method, the anisotropic substrate can be adequately modeled by its isotropic pseudodielectric function for the purpose of overlayer thickness estimation. It is found that after an initial period of rapid growth attributed to the chemical reaction of the exposed surface bonds, the BaCO3 overlayer growth is linear at 1-2 A per day. This slow growth rate is attributed to the complexity of the BaCO3-forming reaction, together with the need for ambient reactants to diffuse through the overlayer.

Sieg, Robert M.↗

NASA NTRS1992

Ellipsometric study of metal-organic chemically vapor deposited III-V semiconductor structures

An ellipsometric study of MOCVD-grown layers of AlGaAs and InGaAs in thick films and strained layer complex structures is presented. It is concluded that the ternary composition of thick nonstrained layers can be accurately determined to within experimental errors using numerical algorithms. In the case of complex structures, thickness of all layers and the alloy composition of nonstrained layers can be determined simultaneously, provided that the correlations between parameters is no higher than 0.9.

Alterovitz, Samuel A.↗

NASA NTRS1990

Optical dispersion relations for diamondlike carbon films

Ellipsometric measurements on plasma deposited diamondlike amorphous carbon (a-C:H) films were taken in the visible, (E = 1.75 to 3.5 eV). The films were deposited on Si and their properties were varied using high temperature (up to 750 C) anneals. The real (n) and imaginary (k) parts of the complex index of refraction, N, were obtained simultaneously. Following the theory of Forouhi and Bloomer, a least squares fit was used to find the dispersion relations n(E) and k(E). Reasonably good fits were obtained, showing that the theory can be used for a-C:H films. Moreover, the value of the energy gap, Eg, obtained in this way was compared the the Eg value using conventional Tauc plots and reasonably good agreement was obtained.

Alterovitz, Samuel A.↗

NASA NTRS1989

Optical dispersion relations for diamondlike carbon films

Ellipsometric measurements on plasma deposited diamondlike amorphous carbon (a-C:H) films were taken in the visible, (E=1.75 to 3.5 eV). The films were deposited on Si and their properties were varied using high temperature (up to 750 C) anneals. The real (n) and imaginary (k) parts of the complex index of refraction N were obtained simultaneously. Following the theory of Forouhi and Bloomer, a least squares fit was used to find the dispersion relations n(E) and k(E). Reasonably good fits were obtained, showing that the theory can be used for a-C:H films. Moreover, the value of the energy gap (Eg) obtained in this way was compared to the Eg value using conventional Tauc plots and reasonably good agreement was obtained.

Alterovitz, Samuel A.↗

NASA NTRS1989

Optical dispersion relations for 'diamondlike' carbon films

Ellipsometric measurements on plasma deposited diamondlike amorphous carbon (a-C:H) films were taken in the visible, (E = 1.75 to 3.5 eV). The films were deposited on Si and their properties were varied using high temperature (up to 750 C) anneals. The real (n) and imaginary (k) parts of the complex index of refraction N were obtained simultaneously. Following the theory of Forouhi and Bloomer, a least squares fit was used to find the dispersion relations n(E) and k(E). Reasonably good fits were obtained, showing that the theory can be used for a-C:H films. Moreover, the value of the energy gap (Eg) obtained in this way was compared to the Eg value using conventional Tauc plots and reasonably good agreement was obtained.

Alterovitz, Samuel A.↗