Engineering topics
Publications and source records attributed to Siegel, P..
We demonstrate Indium Phosphide Double Heterojunction Bipolar Transistors with simultaneous cutoff frequency Fmax of 288 GHz and current gain cutoff frequency Ft of 251 GHz.
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We present ongoing work towards the development of submillimeter wave transistors with goals of realizing advanced high frequency amplifiers, voltage controlled oscillators, active multipliers, and traditional high-speed digital circuits.
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To meet requirements for future planetary and astrophysics space missions, new mixers have been designed to take advantage of the frameless GaAs membrane technology developed at JPL.
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Despite great scientific interest since at least the 1920's, the THz frequency range remains on e of the least tapped regions of the electromagnetic spectrum. Sandwiched between traditional microwave and optical technologies where there is a limited atmospheric propagation path, little commercial emphasis has been placed on THz systems. This has, perhaps fortunately, preserved some unique science and applications for tomorrow's technologies. For over 25 years the sole niche for THz technology has been in the high resolution spectroscopy and remote sensing areas where heterodyne and Fourier transform techniques have allowed astronomers, chemists, Earth, planetary and space scientists to measure, catalog and map thermal emission lines for a wide variety of lightweight molecules. As it turns out, no where else in the electromagnetic spectrum do we receive so much information about these chemical species. In fact, the universe is bathed in THz energy, most of it going unnoticed and undetected.
Frequency multiplier circuits based on planar GaAs Schottky diodes have made significant advances in the last decade. Useful power in the >1 THz range has now been demonstrated from a complete solid-state chain. This paper will review some of the technology responsible for this achievement along with presenting a brief look at future challenges.
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We report on our effort to develop the world's fastest transistor with the ultimate goal of utilizing them in electronic devices for advancing the present state of RF electronic systems.
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The authors propose a new approach to THz power generation, the nanoklystron.
A network was derived that accurately accounts for large gap discontinuties (with respect to a wavelength) without sufering from the limitations of available numeric techniques.
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Multiplier device fabrication techniques have been developed to enable robust implementation of monolithic circuits well into the THz frequency range.
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