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Sienkiewicz, L. J.

Publications and source records attributed to Sienkiewicz, L. J..

Silicon dendritic web material

The development of a low cost and reliable contact system for solar cells and the fabrication of several solar cell modules using ultrasonic bonding for the interconnection of cells and ethylene vinyl acetate as the potting material for module encapsulation are examined. The cells in the modules were made from dendritic web silicon. To reduce cost, the electroplated layer of silver was replaced with an electroplated layer of copper. The modules that were fabricated used the evaporated Ti, Pd, Ag and electroplated Cu (TiPdAg/Cu) system. Adherence of Ni to Si is improved if a nickel silicide can be formed by heat treatment. The effectiveness of Ni as a diffusion barrier to Cu and the ease with which nickel silicide is formed is discussed. The fabrication of three modules using dendritic web silicon and employing ultrasonic bonding for interconnecting calls and ethylene vinyl acetate as the potting material is examined.

Meier, D. L.

Solar cell contacts

Two experimental contact systems were examined and compared to a baseline contact system consisting of evaporated layers of titanium, palladium, and silver and an electroplated layer of copper. The first experimental contact system consisted of evaporated layers of titanium, nickel, and copper and an electroplated layer of copper. This system performed as well as the baseline system in all respects, including its response to temperature stress tests, to a humidity test, and to an accelerated aging test. In addition, the cost of this system is estimated to be only 43 percent of the cost of the baseline system at a production level of 25 MW/year. The second experimental contact system consisted of evaporated layers of nickel and copper and an electroplated layer of copper. Cells with this system show serious degradation in a temperature stress test at 350 C for 30 minutes. Auger electron spectroscopy was used to show that the evaporated nickel layer is not an adequate barrier to copper diffusion even at temperatures as low as 250 C. This fact brings into question the long-term reliability of this contact system.

Meier, D. L.