Engineering topics
Publications and source records attributed to Sierawski, Brian.
This presentation will cover why modeling is useful for radiation hardness assurance cases, and also provide information on Model-Based Assurance Case+ (MBAC+), NASAs Reliability Maintainability Template, and Fault Propagation Modeling.
A systematic approach is presented to constructing a radiation assurance case using Goal Structuring Notation (GSN) for spacecraft containing commercial-off-the-shelf (COTS) parts. The GSN paradigm is applied to an SRAM single-event upset experiment board designed to fly on a CubeSat November 2016. Construction of a radiation assurance case without use of hardened parts or extensive radiation testing is discussed.
A systematic approach is presented to constructing a radiation assurance case using Goal Structured Notation (GSN) for spacecraft containing COTS parts. The GSN paradigm is applied to an SRAM single-event upset experiment board designed to fly on a CubeSat November 2016. Construction of a radiation assurance case without use of hardened parts or extensive radiation testing is discussed.
The CREME96 model has been available on the WWW for more than 10 years now. While principally for the estimation of radiation effects on spacecraft electronics, it contains space radiation environment models that have been used for instrument design calculations, estimation of instrumental background, estimation of radiation hazards and many other purposes. Because of the evolution of electronic part design we have found it necessary to revise CREME96, creating CREME-MC. As part of this revision, we are revising and extending the environmental models in CREME96. This talk will describe the revised radiation environment models that are being made available in CREME-MC
The RADSAFE simulation framework is described and applied to model Single Event Upsets (SEU) in a 0.25 micron CMOS 4Mbit Static Random Access Memory (SRAM). For this circuit, the RADSAFE approach produces trends similar to those expected from classical models, but more closely represents the physical mechanisms responsible for SEU in the SRAM circuit.