Engineering topics

Slavin, S. E.

Publications and source records attributed to Slavin, S. E..

4 records

NASA NTRS1988

High-power AlGaAs channeled substrate planar diode lasers for spaceborne communications

A high power channeled substrate planar AlGaAs diode laser with an emission wavelength of 8600 to 8800 A was developed. The optoelectronic behavior (power current, single spatial and spectral behavior, far field characteristics, modulation, and astigmatism properties) and results of computer modeling studies on the performance of the laser are discussed. Lifetest data on these devices at high output power levels is also included. In addition, a new type of channeled substrate planar laser utilizing a Bragg grating to stabilize the longitudinal mode was demonstrated. The fabrication procedures and optoelectronic properties of this new diode laser are described.

Connolly, J. C.↗

NASA NTRS1988

AlGaAs heterojunction lasers

The characterization of 8300 A lasers was broadened, especially in the area of beam quality. Modulation rates up to 2 Gbit/sec at output powers of 20 mW were observed, waveform fidelity was fully adequate for low BER data transmission, and wavefront measurements showed that phase aberrations were less than lamda/50. Also, individually addressable arrays of up to ten contiguous diode lasers were fabricated and tested. Each laser operates at powers up to 30 mW CW in single spatial mode. Shifting the operating wavelength of the basic CSP laser from 8300 A to 8650 A was accomplished by the addition of Si to the active region. Output power has reached 100 mW single mode, with excellent far field wave front properties. Operating life is currently approx. 1000 hrs at 35 mW CW. In addition, laser reliability, for operation at both 8300 A and 8650 A, has profited significantly from several developments in the processing procedures.

Goldstein, B.↗

NASA NTRS1988

High-power 0.87-micron channel substrate planar lasers for spaceborne communications

High-power single-mode channeled-substrate planar AlGaAs diode lasers are being developed for reliable high-power operation for use as sources in spaceborne optical communication systems. The CSP laser structure has been optimized for operation at an emission wavelength of 870 nm. Such devices have exhibited output powers in excess of 80 mW CW at an operating temperature of 80 C.

Connolly, J. C.↗

NASA NTRS1987

Intrusions in the active layer of channeled-substrate-planar laser diodes

Channeled-substrate-planar laser diodes from various wafers were observed to develop a node or dark spot in their near-field patterns after failure during lifetesting. 'Node' devices from each wafer were angle-lapped and stained in an attempt to uncover a physical mechanism for this common failure symptom. Optical microscopic examination of the beveled cross sections revealed that an intrusion, in the form of a spike at the tip of the zinc diffusion front, had penetrated into the active layer of these diodes. The node observed in the near-field pattern appears to be in a position correspondig to the location of the spike in the active region. In addition, cathodoluminescence measurements on other 'node' diodes revealed a dark line region approximately 2-micron-wide running parallel to and in the middle of the 5-micron contact stripe. It is believed that this dark line region is representative of an area of nonradiative recombination which occurs in the portion of the active layer containing the intrusion.

Slavin, S. E.↗