Engineering topics
Smith, Stephen L.
Publications and source records attributed to Smith, Stephen L..
Empirical Modeling Of Single-Event Upset
Experimental study presents examples of empirical modeling of single-event upset in negatively-doped-source/drain metal-oxide-semiconductor static random-access memory cells. Data supports adoption of simplified worst-case model in which cross sectionof SEU by ion above threshold energy equals area of memory cell.
Zoutendyk, John A.↗