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Snyder, G. Jeffrey

Publications and source records attributed to Snyder, G. Jeffrey.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Inherent Anharmonicity of Harmonic Solids

Atomic vibrations, in the form of phonons, are foundational in describing the thermal behavior of materials. The possible frequencies of phonons in materials are governed by the complex bonding between atoms, which is physically represented by a spring-mass model that can account for interactions (spring forces) between the atoms (masses). The lowest-order, harmonic , approximation only considers linear forces between atoms and is thought incapable of explaining phenomena like thermal expansion and thermal conductivity, which are attributed to nonlinear, anharmonic , interactions. Here, we show that the kinetic energy of atoms in a solid produces a pressure much like the kinetic energy of atoms in a gas does. This vibrational or phonon pressure naturally increases with temperature, as it does in a gas and therefore results in a thermal expansion. Because thermal expansion thermodynamically defines a Grüneisen parameter γ , which is a typical metric of anharmonicity, we show that even a harmonic solid will necessarily have some anharmonicity. A consequence of this phonon pressure model is a harmonic estimation of the Grüneisen parameter as γ ≈ 3 / 2 3 − 4 x 2 / 1 + 2 x 2 , where x = v t / v l is the ratio of the transverse and longitudinal speeds of sound. We demonstrate the immediate utility of this model by developing a high-throughput harmonic estimate of lattice thermal conductivity that is comparable to other state-of-the-art estimations. By linking harmonic and anharmonic properties explicitly, this study provokes new ideas about the fundamental nature of anharmonicity, while also providing a basis for new material engineering design metrics.

42 ENGINEERING↗
DOE OSTI2022

Hidden Local Symmetry Breaking in Silver Diamondoid Compounds is Root Cause of Ultralow Thermal Conductivity

Typically, conventional structure transitions occur from a low symmetry state to a higher symmetry state upon warming. In this work, an unexpected local symmetry breaking in the tetragonal diamondoid compound AgGaTe 2 is reported, which, upon warming, evolves continuously from an undistorted ground state to a locally distorted state while retaining average crystallographic symmetry. This is a rare phenomenon previously referred to as emphanisis. This distorted state, caused by the weak sd 3 orbital hybridization of tetrahedral Ag atoms, causes their displacement off the tetrahedron center and promotes a global distortion of the crystal structure resulting in strong acoustic–optical phonon scattering and an ultralow lattice thermal conductivity of 0.26 W m –1 K –1 at 850 K in AgGaTe 2 . Here, the findings explain the underlying reason for the unexpectedly low thermal conductivities of silver-based compounds compared to copper-based analogs and provide a guideline to suppressing heat transport in diamondoid and other materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

The Importance of Avoided Crossings in Understanding High Valley Degeneracy in Half‐Heusler Thermoelectric Semiconductors

Abstract Half‐Heusler (hH) compounds are promising candidates for inexpensive, low‐toxicity thermoelectric materials. It is well known that engineering electronic bands with high valley degeneracy is an effective approach for enhancing the performance of thermoelectric materials, and there are several routes for achieving high valley degeneracy in hH systems. For instance, there are multiple locations in the first Brillouin zone where the valence band maximum can be found (at the Γ‐, L‐, or W‐point), and there are two competing low‐lying conduction bands at the X‐point, where the conduction band minimum is located. By converging the multiple valence band and conduction band extrema, the valley degeneracy, and hence, performance of these materials can be improved. Here, group theoretical and tight‐binding approaches, in addition to first‐principles density functional theory calculations, are used to study the chemical origins of various band extrema in both the n‐type and p‐type compounds, with particular focus on ZrNiSn and NbFeSb. Specifically, the importance of avoided crossings is explained. The results of this work can be used to better understand and develop design strategies for engineering better performing hH thermoelectrics.

Brod, Madison K.↗
DOE OSTI2021

Tuning valley degeneracy with band inversion

Valley degeneracy is a key feature of the electronic structure that benefits the thermoelectric performance of a material. Despite recent studies which claim that high valley degeneracy can be achieved with inverted bands, our analysis of rock-salt IV–VI compounds using first-principles calculations and k•p perturbation theory demonstrates that mere band inversion is an insufficient condition for high valley degeneracy; rather, there is a critical degree to which the bands must be inverted to induce multiple carrier pockets. The so-called “band inversion parameter” is formalized as a chemically-tunable property, offering a design route to achieving high valley degeneracy in compounds with inverted bands. In conclusion, we predict that the valley degeneracy of rock-salt IV–VI compounds can be increased from N V = 4 to N V = 24, which could result in a corresponding increase in the thermoelectric figure of merit zT .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Printing thermoelectric inks toward next-generation energy and thermal devices

The ability of thermoelectric (TE) materials to convert thermal energy to electricity and vice versa highlights them as a promising candidate for sustainable energy applications. Despite considerable increases in the figure of merit zT of thermoelectric materials in the past two decades, there is still a prominent need to develop scalable synthesis and flexible manufacturing processes to convert high-efficiency materials into high-performance devices. Scalable printing techniques provide a versatile solution to not only fabricate both inorganic and organic TE materials with fine control over the compositions and microstructures, but also manufacture thermoelectric devices with optimized geometric and structural designs that lead to improved efficiency and system-level performances. In this review, we aim to provide a comprehensive framework of printing thermoelectric materials and devices by including recent breakthroughs and relevant discussions on TE materials chemistry, ink formulation, flexible or conformable device design, and processing strategies, with an emphasis on additive manufacturing techniques. Additionally, we review recent innovations in the flexible, conformal, and stretchable device architectures and highlight state-of-the-art applications of these TE devices in energy harvesting and thermal management. Perspectives of emerging research opportunities and future directions are also discussed. While this review centers on thermoelectrics, the fundamental ink chemistry and printing processes possess the potential for applications to a broad range of energy, thermal and electronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Defect chemistry and doping of BiCuSeO

While p-type BiCuSeO is a well-known mid-temperature oxide thermoelectric (TE) material, computations predict that superior TE performance can be realized through n-type doping. In this study, we use first-principles defect calculations to show that Cu vacancies are responsible for the native p-type self doping; yet, we find that BiCuSeO is n-type dopable under Cu-rich growth conditions, where the formation of Cu vacancies is suppressed. We computationally survey a broad suite of 23 dopants and find that only Cl and Br are effective n-type dopants. Therefore, we recommend that future experimental doping efforts utilize phase boundary mapping to optimize the electron concentration and resolve the anomalous p–n–p transitions observed in halogen-doped BiCuSeO. The prospect of n-type doping, as revealed by our defect calculations, paves the path for rational design of BiCuSeO chemical analogues with similar doping behavior and even better TE performance.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Thermal Evolution of Internal Strain in Doped PbTe

Recent improvements in the efficiency of heat-to-electricity energy conversion in lead chalcogenide thermoelectrics involve reducing the thermal conductivity by incorporating large amounts of internal strain. The extent to which typical lead chalcogenide processing techniques (such as doping, ball milling, and densification) increase internal strain and dislocation density must be quantified to improve materials design. In this study, neutron powder diffraction is leveraged to evaluate the internal strain introduced by ball milling in doped and undoped powders. Doping with Na and/or Eu increases internal strain beyond ball milling alone, with the greatest increase from combining the two dopants. Strain recovery occurs in each powder above 400 K but can be suppressed by co-doping, indicating a strong dopant–dislocation interaction in this system. Therefore, high-temperature processing of PbTe powders should be avoided if high internal strain is desired. Low-temperature densification and/or rapid pressing techniques may be key to maintaining internal strain in the final pressed pellet. The diffraction peak asymmetry and correlated elastic softening measured in pressed PbTe pellets in past studies were not observed in the precursor powders measured here, suggesting that measurements of the Debye temperature on final pressed pellets are required to examine the influence of defect-induced elastic softening on thermal conductivity. This work provides key guidance for defect engineering to maximize internal strain and thermoelectric performance in PbTe thermoelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2021

When band convergence is not beneficial for thermoelectrics

Abstract Band convergence is considered a clear benefit to thermoelectric performance because it increases the charge carrier concentration for a given Fermi level, which typically enhances charge conductivity while preserving the Seebeck coefficient. However, this advantage hinges on the assumption that interband scattering of carriers is weak or insignificant. With first-principles treatment of electron-phonon scattering in the CaMg 2 Sb 2 -CaZn 2 Sb 2 Zintl system and full Heusler Sr 2 SbAu, we demonstrate that the benefit of band convergence can be intrinsically negated by interband scattering depending on the manner in which bands converge. In the Zintl alloy, band convergence does not improve weighted mobility or the density-of-states effective mass. We trace the underlying reason to the fact that the bands converge at a one k-point, which induces strong interband scattering of both the deformation-potential and the polar-optical kinds. The case contrasts with band convergence at distant k-points (as in the full Heusler), which better preserves the single-band scattering behavior thereby successfully leading to improved performance. Therefore, we suggest that band convergence as thermoelectric design principle is best suited to cases in which it occurs at distant k-points.

42 ENGINEERING↗
DOE OSTI2021

Using phase boundary mapping to resolve discrepancies in the Mg 2 Si–Mg 2 Sn miscibility gap

Mg 2 Si–Mg 2 Sn compositions within the Mg–Si–Sn materials system have potential as inexpensive, efficient thermoelectrics. These compositions lie specifically along the pseudobinary line with compositions of Mg 2 Si 1-x Sn x . The alloying and possible nanostructuring within the miscibility gap could further increase the thermoelectric figure of merit (zT) for these materials. However, the solubility limits of the miscibility gap differ greatly in the literature. Such a discrepancy could be a result of differing Mg-compositions due to excess magnesium added during sample annealing. To define these limits better and explain the change in proposed solubility limits based on magnesium content, the three-phase regions on either side of the pseudobinary phase region are phase boundary mapped and defect energy calculations are performed. This study presents a new understanding of the Mg–Si–Sn ternary phase diagram around the pseudobinary phase region. The solubility limits on either side of the pseudobinary should be essentially identical between the Mg-rich and Mg-poor three-phase regions unless the system temperature is brought above about 565 °C, at which eutectic liquid Mg 0.9 Sn 0.1 forms. This creates a second Mg-rich three-phase region which intersects the pseudobinary with a lower Sn solubility. Thus, samples prepared along the pseudobinary line are not well-defined thermodynamically when excess magnesium is added. Excess Mg can push the system into a new three phase region with Mg 2 Si 1-x Sn x composition different from that of the true miscibility gap. This understanding presents new guidelines for evaluating the miscibility gap and assists strategies for microstructure engineering and thermoelectric material processing.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗