Engineering topics

So, F. C. T.

Publications and source records attributed to So, F. C. T..

3 records

NASA NTRS1986

Amosphous diffusion barriers

Amorphous W-Zr and W-N alloys were investigated as diffusion barriers in silicon metallization schemes. Data were presented showing that amorphous W-Zr crystallizes at 900 C, which is 200 C higher than amorphous W-Ni films, and that both films react with metallic overlayers at temperatures far below the crystllization temperature. Also, W-N alloys (crystalline temperature of 600 C) were successfully incorporated as a diffusion barrier in contact structures with both Al and Ag overlayers. The thermal stability of the electrical characteristics of shallow n(+)p junctions significantly improved by incorporating W-N layers in the contact system. One important fact demonstated was the critical influence of the deposition parameters during formation of these carriers.

Kolawa, E.↗

NASA NTRS1984

An improved forward I-V method for nonideal Schottky diodes with high series resistance

Two methods are described to obtain the value of the series resistance (R) of a Schottky diode from its forward I-V characteristic. The value of R is then used to plot the curve ln(I) versus V sub D (= V - IR) which becomes a straight line even if ln(I) versus V does not. The ideality factor n and the Schottky-barrier height of the diode then follow from the standard procedure. The main advantages of the methods are: (1) a linear regression can be used to calculate the value of R; (2) many data points are used over the whole data range, which raises the accuracy of the results, and (3) the validity of constant R assumption can be checked by the linearity of the ln (I) versus V sub D curve. The methods are illustrated on the experimental data of a real diode.

Lien, C.-D.↗

NASA NTRS1984

Chromium silicide formation by ion mixing

The formation of CrSi2 by ion mixing was studied as a function of temperature, silicide thickness and irradiated interface. Samples were prepared by annealing evaporated couples of Cr on Si and Si on Cr at 450 C for short times to form Si/CrSi2/Cr sandwiches. Xenon beams with energies up to 300 keV and fluences up to 8 x 10 to the 15th per sq cm were used for mixing at temperatures between 20 and 300 C. Penetrating only the Cr/CrSi2 interface at temperatures above 150 C induces further growth of the silicide as a uniform stoichiometric layer. The growth rate does not depend on the thickness of the initially formed silicide at least up to a thickness of 150 nm. The amount of growth depends linearly on the density of energy deposited at the interface. The growth is temperature dependent with an apparent activation energy of 0.2 eV. Irradiating only through the Si/CrSi2 interface does not induce silicide growth. It is concluded that the formation of CrSi2 by ion beam mixing is an interface-limited process and that the limiting reaction occurs at the Cr/CrSi2 interface.

Shreter, U.↗