Engineering topics

Soclof, S. I.

Publications and source records attributed to Soclof, S. I..

3 records

NASA NTRS1982

Wafering insight provided by the ODE method

The orientation-dependent etching method of slicing was investigated to see if it could be used to form more slices from high quality silicon crystals than can be achieved by mechanical slicing methods. Orientation-dependent slicing uses preferential etching down narrow slots in a silicon slab on form slices. The method has several possible advantages including high slicing yield (sq m/kg), plane parallel, thin slices, ready for processing and the chance of high throughput and low costs. There are limitations in the need for simple crystals, and in restricted depth of slicing.

Soclof, S. I.↗

NASA NTRS1975

Effect of impurity doping concentration on solar cell output

Experimental measurements were made of solar cell and related photovoltaic parameters for silicon with high concentrations of dopant impurities. The cell output peaked for doping levels around 10 to the 17th power per cu cm. Independent measurements of diffusion length and open circuit voltage at high doping levels showed severe reductions at concentrations above 10 to the 18th power per cu cm. Theoretical reasons are given to explain these reductions. Indication is given of the problems requiring solution before increased cell output can be achieved at high doping levels.

Iles, P. A.↗

NASA NTRS1975

Effects of processing on the carrier lifetime in silicon solar cells

Measurements were taken to determine the effects that solar cell processing steps have on the minority carrier lifetime in silicon. The experimental work included measurements of diffusion lengths of the silicon at various stages of cell fabrication, of solar cell properties, and of the PN junction properties for ingots covering a wide range of doping and other ingot properties. Resistivities covered the range of 0.01 to 10 ohm-cm, and combinations of extreme concentrations (high and low) of dislocations and oxygen were included. The results showed that the major cell process steps did not usually cause any appreciable change in diffusion lengths. The solar cell currents obtained supported the diffusion length measurements. The effects of heavy doping concentrations on solar cell performance were studied. Attempts were made to relate the voltage behavior of the cells with the diode properties and the properties of the ingots.

Iles, P. A.↗