Engineering topics

Someya, Takao

Publications and source records attributed to Someya, Takao.

3 records

DOE OSTI2025

Mechanically flexible mid-wave infrared imagers using black phosphorus ink films

The mid-wave infrared (MWIR) spectral range (λ = 3–8 μm) enables important sensing and imaging applications, including non-invasive bioimaging, night vision, and autonomous navigation. Commercial MWIR photodetectors are limited to rigid imagers based on heteroepitaxial materials. There is an emerging need for mechanically flexible MWIR imagers to broaden their functionality and practicality. Recently, photodetectors using van der Waals (vdW) black phosphorus (BP) flakes have demonstrated highly sensitive room-temperature photodetection. Additionally, vdW materials are solution-processable, facilitating scalable processing and flexible device fabrication. In this work, we present flexible MWIR imagers consisting of photodiodes fabricated on thin plastic substrates using BP ink films. We demonstrate mechanically robust responsivity up to 2.5-mm bending radii and after 5000 bending cycles. Leveraging this flexibility, we achieve full-azimuthal imaging, detecting directional light sources with precision. These results establish a scalable approach for large-area, conformable MWIR imaging and pave the way for integration with flexible electronics.

Wijaya, Theodorus Jonathan↗

DOE OSTI2024

A bending test protocol for characterizing the mechanical performance of flexible photovoltaics

Flexible photovoltaics (PV) represents a promising research field with great potential for wearable, portable, and indoor applications. Significant progress has been made in recent years, with flexible emerging PV reporting power conversion efficiency (PCE) over 24%. Yet, there is a need for a unifying protocol to assess PV performance, compare research results, and evaluate the state- of-the-art achievements in flexible PV. In this paper, a consensus protocol is presented for measuring PCE over 1,000 bending cycles under 1% strain. Moreover, several good practice guidelines are proposed including bending procedures, flexibility testing with and without encapsulation, and ambient conditions during testing (e.g., temperature, humidity, illumination). Notably, the importance of uniform application of bending radius and the testing of parallel and perpendicular orientations of bending axis with respect to the direction of the electric current are emphasized. These recommendations aim to promote consistency in device comparison and allow for better reproducibility.

Fukuda, Kenjiro↗

DOE OSTI2021

Foundry-compatible high-resolution patterning of vertically phase-separated semiconducting films for ultraflexible organic electronics

Solution processability of polymer semiconductors becomes an unfavorable factor during the fabrication of pixelated films since the underlying layer is vulnerable to subsequent solvent exposure. A foundry-compatible patterning process must meet requirements including high-throughput and high-resolution patternability, broad generality, ambient processability, environmentally benign solvents, and, minimal device performance degradation. However, known methodologies can only meet very few of these requirements. Here, a facile photolithographic approach is demonstrated for foundry-compatible high-resolution patterning of known p- and n-type semiconducting polymers. This process involves crosslinking a vertically phase-separated blend of the semiconducting polymer and a UV photocurable additive, and enables ambient processable photopatterning at resolutions as high as 0.5 μm in only three steps with environmentally benign solvents. The patterned semiconducting films can be integrated into thin-film transistors having excellent transport characteristics, low off-currents, and high thermal (up to 175 °C) and chemical (24 h immersion in chloroform) stability. Moreover, these patterned organic structures can also be integrated on 1.5 μm-thick parylene substrates to yield highly flexible (1 mm radius) and mechanically robust (5,000 bending cycles) thin-film transistors.

36 MATERIALS SCIENCE↗