A morphological study of silicon carbide prepared by chemical vapor deposition
Surface morphologies of SiC deposits obtained via chemical vapor deposition (CVD) were studied as functions of substrate surface temperature and the concentration of the silicon and carbon source material, methyltrichlorosilane. Substrates of graphite and alpha-SiC crystals were used. Explanations of the observed morphologies on graphite substrates and their marked changes with temperature are given in terms of chemical kinetics and mass transport arguments. The results of thermodynamic calculations were used to help explain the observed morphologies of the deposits on alpha-SiC substrates.
Tsui, P.↗